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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Yuzou Oono (Univ. of Tsukuba)
Vice Chair Tatsuya Kunikiyo (Renesas)
Secretary Rihito Kuroda (Tohoku Univ.)
Assistant Tadashi Yamaguchi (Renesas)

Technical Committee on Electronic Information Displays (EID) [schedule] [select]
Chair Mutsumi Kimura (Ryukoku Univ.)
Vice Chair Tomokazu Shiga (Univ. of Electro-Comm.), Yuko Kominami (Shizuoka Univ.)
Secretary Munekazu Date (NTT), Masahiro Yamaguchi (Tokyo Inst. of Tech.)
Assistant Rumiko Yamaguchi (Akita Univ.), Ryosuke Nonaka (Toshiba), Hiroyuki Nitta (Japan Display), Takashi Kojiri (ZEON), Mitsuru Nakata (NHK)

Conference Date Fri, Dec 12, 2014 10:00 - 18:00
Topics Si and Si-related Materials and Devices, Display Technology 
Conference Place Katsura Campus, Kyoto University 
Address A1, Katsura, Nishikyo, Kyoto 615-8510, Japan
Transportation Guide http://www.kyoto-u.ac.jp/ja/access/downlodemap
Contact
Person
Prof. T. Kimoto
*81-75-383-2300
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Fri, Dec 12 AM 
10:00 - 12:00
(1) 10:00-10:15 Shape and Size Effects on Hole Mobility of Rectangular Cross-sectional Ge Nanowires EID2014-13 SDM2014-108 Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)
(2) 10:15-10:30 Impacts of Orientation and Cross-sectional Shape on Mobility of P-channel Si Nanowire MOSFETs EID2014-14 SDM2014-109 Hiroaki Fujihara, Naoya Morioka, Hajime Tanaka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)
(3) 10:30-10:45 Activation of B+ or B10H14+ Implanted Silicon by Soft X-ray Irradiation EID2014-15 SDM2014-110 Akira Heya, Fumito Kusakabe, Shota Hirano, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo)
(4) 10:45-11:00 Conduction mechanism and Charge retention mechanism for DNA memory transistor EID2014-16 SDM2014-111 Shouhei Nakamura, Naoto Matsuo, Akira Heya, Kazushige Yamana, Tadao Takada (Univ. of Hyogo), Masatake Fukuyama, Shin Yokoyama (hiroshima Univ)
(5) 11:00-11:15 Irradiation Effect of Carbon-Based Polyatomic Ions on Si Substrate EID2014-17 SDM2014-112 Mitsuaki Takeuchi, Kyohei Hayashi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.), Tsutomu Nagayama, Koji Matsuda (Nissin Ion Equipment)
(6) 11:15-11:30 Photoelectric conversion function analysis of the silicon solar module using electroluminescence(EL) emission intensity EID2014-18 SDM2014-113 Tsuyoshi Tomimoto, Shota Tsuzuki, Ayumi Tani (NAIST)
(7) 11:30-11:45 Application of Laser Doping with Boron-doped Silicon Nano Ink to High Efficiency Silicon Solar Cell EID2014-19 SDM2014-114 Mitsuaki Manabe, Hideki Sakagawa, Hideki Nishimura (NAIST), Yuka Tomizawa, Yoshinori Ikeda (Teijin), Takashi Fuyuki (NAIST)
(8) 11:45-12:00 Micro-Wall Solar Cell with Electric-Field Effect EID2014-20 SDM2014-115 Kohei Oki, Shota Wakamiya, Takahiro Kobayashi, Akira Heya, Naoto Matsuo (Univ. of Hyogo)
  - Lunch Break
Fri, Dec 12 PM 
13:00 - 15:30
(9) 13:00-13:15 Evaluation of photoconductivities of n-ch, p-ch, pin-ch poly-Si TFPTs EID2014-21 SDM2014-116 Takahiro Fuchiya, Yoshiharu Maeda, Takayuki Kadonome, Takumi Tanaka, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ)
(10) 13:15-13:30 Characteristic Comparison of Frequency Modulation Type Photo Sensors using N-type・P-type・PIN-Type Thin-Film Phototransistors EID2014-22 SDM2014-117 Yoshiharu Maeda, Takahiro Fuchiya, Takayuki Kadonome, Takumi Tanaka, Shota Haruki, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
(11) 13:30-13:45 Low-Temperature CLC Poly-Si TFTs with Sputtered HfO2 Gate Dielectric Layer EID2014-23 SDM2014-118 Tatsuya Meguro, Akito Hara (Tohoku Gakuin Univ.)
(12) 13:45-14:00 Characteristic comparison of hybrid-type temperature sensors using poly-Si TFTs EID2014-24 SDM2014-119 Katsuya Kito, Hisashi Hayashi, Shuhei Kitajima, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
(13) 14:00-14:15 Characterization of Synchronous and Asynchronous Circuits using poly-Si TFTs EID2014-25 SDM2014-120 Yosuke Nagase (Ryukoku Univ.), Tokiyoshi Matsuda, Mutsumi Kimura (Osaka Univ.), Taketoshi Matsumoto, Hikaru Kobayashi (Ryukoku Univ.)
(14) 14:15-14:30 Crystallization of Germanium Film with (111) Orientation on Amorphous Substrate by Laser Annealing EID2014-26 SDM2014-121 Toru Takao, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)
(15) 14:30-14:45 Research and Development of Magnetic Field Sensors using Poly-Si Hall Device with Gate terminal and IGZO Hall Device EID2014-27 SDM2014-122 Takaaki Matsumoto, Akito Yoshikawa, Shougo Miyamura, Haruki Shiga, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Tokuro Ozawa, Koji Aoki, Chih-Che Kuo (AUO japan)
(16) 14:45-15:00 Characteristics of Ga-Sn-Oxide thin film EID2014-28 SDM2014-123 Yuta Kato, Daiki Nishimoto, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
(17) 15:00-15:15 Effect of deposition conditions on the properties of IGZO thin film EID2014-29 SDM2014-124 Katsuya Nishino, Kota Takahashi, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
(18) 15:15-15:30 Characterization of the touch panel circuit using ITZO TFTs EID2014-30 SDM2014-125 Yuki Koga, Tokiyoshi Matsuda (Ryukoku Univ.), Mamoru Furuta (Kochi Univ. of Technol.), Mutsumi Kimura (Ryukoku Univ.)
  - Break
Fri, Dec 12 PM 
15:45 - 18:00
(19) 15:45-16:00 Porous Silicon 3D micro structure formation by strain-induced self-rolling by porosity control EID2014-31 SDM2014-126 Keita Ishiguro, Masaki Denokami, Kanna Aoki, Minoru Fujii (Kobe Univ.)
(20) 16:00-16:15 Formation of nc-Si in SiOx by Soft X-ray Irradiation EID2014-32 SDM2014-127 Fumito Kusakabe, Shota Hirano, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Takayasu Mochizuki, Shuji Miyamoto (Univ. of Hyogo), Kazuyuki Kohama, Kazuhiro Ito (Osaka Univ.)
(21) 16:15-16:30 Frequency dependence of Split C-V characteristics in Si-face 4H-SiC n-MOSFETs EID2014-33 SDM2014-128 Hiroto Yuki (NAIST), Hiroshi Yano (NAIST/Univ. Tsukuba)
(22) 16:30-16:45 Interface Characterization of 4H-SiC MOSFETs by Single Pulse Id-Vgs Measurements EID2014-34 SDM2014-129 Kosuke Isono (NAIST), Hiroshi Yano (NAIST/Univ. Tsukuba)
(23) 16:45-17:00 Temperature Dependence of Current Gain in 4H-SiC BJTs EID2014-35 SDM2014-130 Satoshi Asada, Takafumi Okuda, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.)
(24) 17:00-17:15 Atomic Layer Deposition of Al2O3 Film Utilizing Water Vapor Plasma Oxidation EID2014-36 SDM2014-131 Tomoaki Umehara, Masahiro Horita, Koji Yoshitsugu, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)
(25) 17:15-17:30 Study of driving forces that cause resistive switching of binary transition metal oxide memory EID2014-37 SDM2014-132 Ryosuke Koishi, Takumi Moriyama, Kouhei Kimura, Kouki Kawano, Hidetoshi Miyashita, Sang-Seon Lee, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.)
(26) 17:30-17:45 Resistive switching characteristics of NiO-based ReRAM after semi-forming process. EID2014-38 SDM2014-133 Hiroki Sasakura, Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto (Kyoto Univ.)
(27) 17:45-18:00 Study on Formative Mechanism of Conductive Path in Resistive Random Access Memory (ReRAM)
-- Analyses of Various NiO Surface States Using Ab Initio Calculations --
EID2014-39 SDM2014-134
Takumi Moriyama (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.)

Announcement for Speakers
General Talk (15分)Each speech will have 10 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E--mail: fffe 
EID Technical Committee on Electronic Information Displays (EID)   [Latest Schedule]
Contact Address  


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