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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Tamotsu Hashidume (Hokkaido Univ.)
Vice Chair Toru Kaji (Toyota Central R&D Labs.)
Secretary Koichi Murata (NTT), Naoki Hara (Fujitsu Labs.)
Assistant Kunio Tsuda (Toshiba), Michihiko Suhara (Tokyo Metropolitan Univ.)

Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Shigeyoshi Watanabe (Shonan Inst. of Tech.)
Vice Chair Toshihiro Sugii (Fujitsu Microelectronics)
Secretary Hisahiro Anzai (Sony), Tetsuro Endo (Tohoku Univ.)
Assistant Katsunori Onishi (Kyushu Inst. of Tech.), Yukinori Ono (NTT)

Conference Date Mon, Feb 22, 2010 13:00 - 16:55
Tue, Feb 23, 2010 09:30 - 12:50
Topics Functional Nano Device and Related Technology 
Conference Place Okinawa-ken Seinenn-Kaikan 
Address 2-15-23 Kume, Naha-shi, 900-0033 Japan.
Transportation Guide http://www.okinawakenseinenkaikan.or.jp/new/page.php?7
Contact
Person
Prof. Takashi Noguchi
+81-98-864-1780
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Mon, Feb 22 PM 
13:00 - 14:40
(1) 13:00-13:25 Neuromorphic adiabatic quantum computation based on phosphorus nuclear spin array in Si ED2009-196 SDM2009-193 Mitsunaga Kinjo (Univ. of the Ryukyus), Shigeo Sato (Tohoku Univ.)
(2) 13:25-13:50 Seebeck coefficient in heavily-doped SOI layers ED2009-197 SDM2009-194 Hiroya Ikeda, Faiz Salleh (Shizuoka Univ.)
(3) 13:50-14:15 Stochastic Resonance Devices Based on Carbon Nanotube Field-Effect Transistors ED2009-198 SDM2009-195 Yasufumi Hakamata, Yasuhide Ohno, Kenzo Maehashi (ISIR Osaka Univ.), Seiya Kasai (RCIQE Hokkaido Univ.), Koichi Inoue, Kazuhiko Matsumoto (ISIR Osaka Univ.)
(4) 14:15-14:40 Analysis on Stochastic Resonance Behavior of Single Electron in Quantum Dots ED2009-199 SDM2009-196 Seiya Kasai (Hokkaido Univ/JST), Yuta Shiratori, Kensuke Miura (Hokkaido Univ.)
  14:40-14:50 Break ( 10 min. )
Mon, Feb 22 PM 
14:50 - 16:55
(5) 14:50-15:15 MOVPE Growth of InGaN/GaN MQW on a Polar, Semi-polar, and Non-polar GaN Stripes by Selective MOVPE ED2009-200 SDM2009-197 Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi (Nagoya Univ.)
(6) 15:15-15:40 Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Millisecond Annealing and Its Application to Floating Gate Memory ED2009-201 SDM2009-198 Tatsuya Okada (Univ. of the Ryukyus), Seiichiro Higashi, Katsunori Makihara, Yasuo Hiroshige, Seiichi Miyazaki (Hiroshima Univ.)
(7) 15:40-16:05 Integration of Single-Electron Transistors Using Field-Emission-Induced Electromigration ED2009-202 SDM2009-199 Shunsuke Ueno, Yusuke Tomoda, Watari Kume, Michinobu Hanada, Kazutoshi Takiya, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.)
(8) 16:05-16:30 Fabrication of Planar-Type Ferromagnetic Tunnel Junctions Using Field-Emission-Induced Electromigration ED2009-203 SDM2009-200 Kazutoshi Takiya, Yusuke Tomoda, Takato Watanabe, Watari Kume, Shunsuke Ueno, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech)
(9) 16:30-16:55 Observation of enhanced MR effects in a single electron transistor with ferromagnetic lead electrodes ED2009-204 SDM2009-201 Nobuyuki Tamura, Kento Kikuchi, Masataka Moriya, Tadayuki Kobayashi, Hiroshi Shimada, Yoshinao Mizugaki (Univ. of Electro-Comm.)
Tue, Feb 23 AM 
09:30 - 11:25
(10) 09:30-10:10 [Invited Talk]
Effect of interface properties on characteristics of carbon nanotube FETs ED2009-205 SDM2009-202
Yutaka Ohno, Naoki Moriyama, Takamitsu Kitamura, Kosuke Suzuki, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.)
(11) 10:10-10:35 CMOS inverters based on carbon nanotube field-effect transistors with SiNx passivation films ED2009-206 SDM2009-203 Takaomi Kishimoto, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue, Kazuhiko Matsumoto (ISIR, Osaka Univ.)
(12) 10:35-11:00 Fabrication of nanowire-based sequential circuits using gate-controlled GaAs three-branch nanowire junctions ED2009-207 SDM2009-204 Hiromu Shibata, Daisuke Nakata, Yuta Shiratori (Hokkaido Univ), Seiya Kasai (Hokkaido Univ/JST)
(13) 11:00-11:25 Compact Reconfigurable BDD Logic Circuits utilizing GaAs Nanowire Network ED2009-208 SDM2009-205 Yuta Shiratori, Kensuke Miura (Hokkaido Univ.), Seiya Kasai (Hokkaido Univ./JST)
  11:25-11:35 Break ( 10 min. )
Tue, Feb 23 PM 
11:35 - 12:50
(14) 11:35-12:00 Detectors of Terahertz and Infrared Radiation Based on p-i-n Single- and Multiple Graphene Layer Structures ED2009-209 SDM2009-206 Victor Ryzhii, Maxim Ryzhii (Univ. of Aizu), Taiichi Otsuji (Tohoku Univ.), Vladimir Mitin (Buffalo Univ.)
(15) 12:00-12:25 Electrical Property of CNT/cellulose Composite Paper ED2009-210 SDM2009-207 Tomo Tanaka, Eiichi Sano (Hokkaido Univ.), Kousuke Akiyama, Masanori Imai (Tokushu Paper)
(16) 12:25-12:50 Nonvolatile memory based on carbon nanotube field-effect transistors ED2009-211 SDM2009-208 Kenzo Maehashi, Takahiro Ohori, Satoshi Nagaso, Koichi Inoue, Kazuhiko Matsumoto (Osaka Univ.)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.
Invited TalkEach speech will have 35 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Koichi Murata(NTT)
TEL:+81-46-240-2871、FAX:+81-46-270-2872
E-aecl
Hara Naoki (Fujitsu Lab.)
TEL : +81-46-250-8242、FAX : +81-46-250-8168
E- : o
Kunio Tsuda(Toshiba)
TEL : +81-44-549-2142、FAX : +81-44-520-1501
E- : oba
Michihiko Suhara (Tokyo Metropolitan Univ.)
TEL : +81-42-677-2765 Fax : +81-42-677-2756
E- : t 
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Hisahiro Ansai(Sony)
Tel 046-201-3297 Fax046-202-6572
E-: HiAniny 


Last modified: 2009-12-15 12:55:22


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