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| Chair |
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Hiroshige Hirano (TowerPartners Semiconductor) |
| Vice Chair |
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Shunichiro Ohmi (Tokyo Inst. of Tech.) |
| Secretary |
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Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.) |
| Assistant |
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Taiji Noda (Panasonic), Tomoyuki Suwa (Tohoku Univ.) |
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| Conference Date |
Thu, Jan 28, 2021 13:05 - 17:05 |
| Topics |
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| Conference Place |
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| Sponsors |
This conference is co-sponsored by The Japan Society of Applied Physics.
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Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Registration Fee |
This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM. |
Thu, Jan 28 PM
13:00 - 17:05 |
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13:00-13:05 |
Opening Address ( 5 min. ) |
| (1) |
13:05-13:35 |
[Invited Talk]
****  SDM2020-49 |
Reika Ichihara (Kioxia) |
| (2) |
13:35-14:05 |
[Invited Talk]
Diamond Semiconductor Devices, state-of-the-art of material growth and device processing SDM2020-50 |
Hitoshi Umezawa (AIST) |
| (3) |
14:05-14:35 |
[Invited Talk]
Secure 3D CMOS Chip Stacks with Backside Buried Metal Power Delivery Networks for Distributed Decoupling Capacitance SDM2020-51 |
Kazuki Monta (Kobe Univ.) |
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14:35-15:05 |
Break ( 30 min. ) |
| (4) |
15:05-15:35 |
[Invited Talk]
Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure SDM2020-52 |
Katsuhiro Tomioka, Hironori Gamo, Junichi Motohisa, Takashi Fukui (Hokkaido Univ.) |
| (5) |
15:35-16:05 |
[Invited Talk]
Evaluation of Defects in Si Substrates Introduced by Stochastic Lateral Straggling during Plasma Exposure and Its Impact on Ultra-low Leakage Devices SDM2020-53 |
Yoshihiro Sato, Takayoshi Yamada, Kazuko Nishimura, Masayuki Yamasaki, Masashi Murakami (Panasonic), Keiichiro Urabe, Koji Eriguchi (Kyoto Univ.) |
| (6) |
16:05-16:35 |
[Invited Talk]
Subband Engineering by Combination of Channel Thickness Scaling and (111) Surface Orientation in InAs-On-Insulator nMOSFETs SDM2020-54 |
Kei Sumita, Kasidit Toprasertpong, Mitsuru Takenaka, Shinich Takagi (Univ.of Tokyo) |
| (7) |
16:35-17:05 |
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| Announcement for Speakers |
| Invited Talk | Each speech will have 25 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
SDM Secretary: MORI Takahiro(National Institute of AIST)
Tel +81-29-849-1149
E-Mail   -    aist |
Last modified: 2021-01-04 11:50:24
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