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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Tatsuya Kunikiyo (Renesas)
Vice Chair Takahiro Shinada (Tohoku Univ.)
Secretary Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas)
Assistant Hiroya Ikeda (Shizuoka Univ.)

Conference Date Thu, Nov 10, 2016 10:00 - 16:40
Fri, Nov 11, 2016 10:00 - 16:30
Topics Process, Device, Circuit Simulation, etc. 
Conference Place  
Transportation Guide http://www.jspmi.or.jp/kaigishitsu/index.html
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Thu, Nov 10 AM 
Chair: Hiroki Akira (Kyoto Institute of Technology)
10:00 - 12:00
(1) 10:00-11:00 [Invited Talk]
SISPAD 2016 Review (1) SDM2016-79
Kenichiro Sonoda (Renesas Electronics)
(2) 11:00-12:00 [Invited Talk]
Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS) SDM2016-80
Naoki Tega, Digh Hisamoto, Akio Shima, Yasuhiro Shimamoto (Hitachi)
  12:00-13:30 Lunch Break ( 90 min. )
Thu, Nov 10 PM 
Chair: Ken'ichiro Sonoda (Renesas Electronics)
13:30 - 15:30
(3) 13:30-14:30 [Invited Talk]
Potential and Prospects of Low-Energy SOI Devices in Sensor Network Era SDM2016-81
Yasuhisa Omura (Kansai Univ.)
(4) 14:30-15:30 [Invited Talk]
Free carrier density dependent band gap and phonon frequency in germanium SDM2016-82
Shoichi Kabuyanagi, Akira Toriumi (The Univ. of Tokyo)
  15:30-15:40 Break ( 10 min. )
Thu, Nov 10 PM 
Chair: Hirokazu Hayashi (LAPIS Semiconductor)
15:40 - 16:40
(5) 15:40-16:40 [Invited Talk]
Simulation for Impact of ISFET Structure on Sensitivity SDM2016-83
Kazuya Matsuzawa (Toshiba)
Fri, Nov 11 AM 
Chair: Hisahiro Ansai (Sony Semiconductor Solutions)
10:00 - 12:00
(6) 10:00-11:00 [Invited Talk]
Review of SISPAD 2016 (2) SDM2016-84
Yoshinari Kamakura (Osaka Univ.)
(7) 11:00-12:00 [Invited Talk]
Simulation Studies Contributing to Development of Wide-Bandgap Power Semiconductor Devices SDM2016-85
Kazuhiro Mochizuki (AIST)
  12:00-13:30 Lunchi Break ( 90 min. )
Fri, Nov 11 PM 
Chair: Yoshinori Oda (Keio University)
13:30 - 15:30
(8) 13:30-14:30 [Invited Talk]
Detection and Analysis of Single MOS Interface Traps Using the Charge Pumping Method
-- Toward Advanced Atomistic Trap Physics --
SDM2016-86
Toshiaki Tsuchiya (Shimane Univ.)
(9) 14:30-15:30 [Invited Talk]
Application of DFT Calculation for the Development of High Quality Si and Ge Substrates
-- From Ultra Large Diameter Crystal Pulling to Metal Gettering --
SDM2016-87
Koji Sueoka (Okayama Pref. Univ.)
  15:30-15:40 Break ( 10 min. )
Fri, Nov 11 PM 
Chair: Tatsuya Kunikiyo (Renesas Electronics)
15:40 - 16:30
(10) 15:40-16:05 Self-Consistent Monte Carlo Device Simulations Under Double-Gate Device Structures SDM2016-88 Hajime Sakamoto, Yasuaki Rokugo, Nobuyuki Sano (Tsukuba univ.)
(11) 16:05-16:30 Self-Consistent Device Simulation of a-Si p-i-n Solar Cells and Physical Mechanism of Capture and Emission Processes SDM2016-89 Azuma Suzuki (Tsukuba Univ.), Katsuhisa Yoshida (Tokyo Univ.), Nobuyuki Sano (Tsukuba Univ.)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E--mail: e3 


Last modified: 2016-09-26 14:44:24


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