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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Takahiro Shinada (Tohoku Univ.)
Vice Chair Hiroshige Hirano (TowerJazz Panasonic)
Secretary Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY)
Assistant Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.)

Conference Date Mon, Jun 25, 2018 11:00 - 16:55
Topics Material Science and Process Technology for MOS Devices and Memories 
Conference Place  
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.
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and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Registration Fee This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM.

Mon, Jun 25 AM 
11:00 - 16:55
(1) 11:00-11:20 Evaluation of Interface State Density in GaN-MOS Capacitors on Miscut m-plane GaN Substrates SDM2018-16 Manato Deki, Yuto Ando, Hirotaka Watanabe, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.)
(2) 11:20-11:40 Comparative study of SiO2/GaN interface structures and properties between Ar and He as a mixture gas with oxygen for remote plasma chemical vapor deposition SDM2018-17 Nguyen Xuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST-NU GaN-OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST-NU GaN-OIL), Mitsuhisa Ikeda, Makihara Katsunori (Nagoya Univ.), Mitsuaki Shimizu (AIST-NU GaN-OIL), Seiichi Miyazaki (Nagoya Univ.)
(3) 11:40-12:00 Control of SiO2/GaN Interface for High-performance GaN MOSFET SDM2018-18 Tauji Hosoi, Takahiro Yamada, Mikito Nozaki (Osaka Univ.), Tokio Takahashi, Hisashi Yamada, Mitsuaki Shimizu (AIST), Akitaka Yoshigoe (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
(4) 12:00-12:20 Influence of native oxide layer on electrical characteristics of Al2O3/n-GaN capacitors SDM2018-19 Kazuya Yuge (SIT), Toshihide Nabatame, Yoshihiro Yoshikawa, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide (NIMS), Tomoji Ohishi (SIT)
  12:20-13:30 Lunch break ( 70 min. )
(5) 13:30-14:00 [Invited Lecture]
Inversion channel diamond MOSFET
-- Formation of diamond MOS interface by wet annealing --
SDM2018-20
Tsubasa Matsumoto (Kanazawa Univ.), Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi (AIST), Takao Inokuma (Kanazawa Univ.), Satoshi Yamasaki (AIST), Norio Tokuda (Kanazawa Univ.)
(6) 14:00-14:30 [Invited Lecture]
Progress in Diamond Field Effect Transistors SDM2018-21
Hiroshi Kawarada, Nobutaka Oi, Bi Te, Shoichiro Imanishi, Masayuki Iwatakaki, Taichi Yabe, Atsushi Hiraiwa (Waseda Univ.)
(7) 14:30-15:00 [Invited Lecture]
Recent progress and problem of Diamond device: Crystal quality of bulk and surface
Yukako Kato (AIST), Kouhei Takizawa (Tokyo City Univ.), Toshiharu Makino, Hiromitsu Kato, Masahiko Ogura, Daisuke Takeuchi, Satoshi Yamasaki (AIST), Hiroshi Nohira (Tokyo City Univ.)
  15:00-15:15 Break ( 15 min. )
(8) 15:15-15:35 Chemical Bonding Features and Thermal Stability at SiO2/GaN interfaces Formed by Remote O2 Plasma Enhanced CVD SDM2018-22 Ryohei Matsuda, Akio Ohta (Nagoya Univ.), Noriyuki Taoka (AIST), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST), Seiichi Miyazaki (Nagoya Univ.)
(9) 15:35-15:55 Modification of Al2O3/SiC interface by oxygen radical irradiation SDM2018-23 Takuma Doi (Nagoya Univ.), Wakana Takeuchi (AIT), Mitsuo Sakashita (Nagoya Univ.), Noriyuki Taoka (AIST), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)
(10) 15:55-16:15 First principle investigation of superlattice GeTe/Sb2Te3 phase change SDM2018-24 Hiroaki Nohara, Hiroki Shirakawa, Masaaki Araidai, Kenji Shiraishi (Nagoya Univ.)
(11) 16:15-16:35 Concern of Ferroelectric HfO2 Films Brought by Large Coercive Field SDM2018-25 Shinji Migita, Hiroyuki Ota (AIST), Akira Toriumi (Univ. Tokyo)
(12) 16:35-16:55 XPS Study of Silicate Formation and Electrical Dipole at Y2O3/SiO2 Interfaces SDM2018-26 Nobuyuki Fujimura, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)

Announcement for Speakers
General TalkEach speech will have 15 minutes for presentation and 5 minutes for discussion.
Invited LectureEach speech will have 25 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E--mail: e3 


Last modified: 2018-04-20 18:00:03


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