|
|
| Chair |
|
Tetsuro Endo (Tohoku Univ.) |
| Vice Chair |
|
Yasuo Nara (Fujitsu Semiconductor) |
| Secretary |
|
Yukinori Ono (NTT), Shintaro Nomura (Univ. of Tsukuba) |
| Assistant |
|
Yoshitaka Sasago (Hitachi) |
|
| Conference Date |
Thu, Oct 20, 2011 13:30 - 17:40
Fri, Oct 21, 2011 09:00 - 16:40 |
| Topics |
Process science and new process technologies |
| Conference Place |
Niche, Tohoku University |
| Address |
Aza-Aoba 6-6-10, Aramaki, Aobaku, Sendai, 980-8579, Japan |
Contact
Person |
Associate Prof. Tetsuya Goto
+81-22-795-3977 |
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Thu, Oct 20 PM
13:30 - 17:40 |
| (1) |
13:30-14:20 |
[Invited Talk]
Characteristics Variability and Random Telegraph Noise in Fully Depleted SOI MOSFETs  SDM2011-97 |
Toshiro Hiramoto (Univ. of Tokyo) |
| (2) |
14:20-14:45 |
Reduction of Random Telegraph Noise with Broad Channel MOSFET SDM2011-98 |
Hiroyoshi Suzuki, Rihito Kuroda, Akinobu Teramoto, Akihiro Yonezawa, Hiroaki Matsuoka, Taiki Nakazawa, Kenichi Abe, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
| (3) |
14:45-15:10 |
Statistical Evaluations of Generation and Recovery Characteristics of Anomalous Stress Induced Leakage Current SDM2011-99 |
Takuya Inatsuka, Yuki Kumagai, Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
| |
15:10-15:20 |
Break ( 10 min. ) |
| (4) |
15:20-15:45 |
Effect of Si surface roughness on electrical characteristics of HfON gate insulator SDM2011-100 |
Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) |
| (5) |
15:45-16:10 |
On the relation between interface flattening effect and insulator breakdown characteristic of radical reaction based insulator formation technology SDM2011-101 |
Rihito Kuroda, Akinobu Teramoto, Xiang Li, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
| (6) |
16:10-17:40 |
[Special Talk]
Science Based New Silicon Technologies SDM2011-102 |
Tadahiro Ohmi (Tohoku Univ.) |
| |
17:40-18:00 |
Break ( 20 min. ) |
| |
18:00-20:00 |
Banquet ( 120 min. ) |
Fri, Oct 21 AM
09:00 - 16:40 |
| (7) |
09:00-09:50 |
[Invited Talk]
Study of HfO2/Si/strained-Ge/SiGe using Angle Resolved x-ray Photoelectron Spectroscopy SDM2011-103 |
Hiroshi Nohira, Arata Komatsu, Kentarou Nasu, Yusuke Hoshi, Toru Kurebayashi, Kentaro Sawano (Tokyo City Univ.), M. Myronov (Univ. of Warwick), Yasuhiro Shiraki (Tokyo City Univ.) |
| (8) |
09:50-10:15 |
Channel strain measurements in 32nm-node CMOSFETs SDM2011-104 |
Munehisa Takei, Hiroki Hashiguchi, Takuya Yamaguchi, Daisuke Kosemura, Kohki Nagata, Atsushi Ogura (Meiji Univ.) |
| (9) |
10:15-10:40 |
Clear Difference between the Chemical Structure of SiO2/Si Interfaces Formed Using Oxygen Radicals and Oxygen Molecules SDM2011-105 |
Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro (JASRI), Takeo Hattori, Tadahiro Ohmi (Tohoku Univ.) |
| |
10:40-10:50 |
Break ( 10 min. ) |
| (10) |
10:50-11:15 |
AR-XPS Study on Chemical Bonding State of In0.53Ga0.47As Surface treated by Various Surface Treatments SDM2011-106 |
Yuya Numajiri, Koji Yamashita, Arata Komatsu (Tokyo City Univ.), Darius Zade (FRC. Tokyo Inst. of Tech), Kuniyuki Kakushima (IGSSE. Tokyo Inst. of Tech.), Hiroshi Iwai (FRC. Tokyo Inst. of Tech), Hiroshi Nohira (Tokyo City Univ.) |
| (11) |
11:15-11:40 |
A study on contact resistivity lowering of PtSi by alloying with low work function metals SDM2011-107 |
Shun-ichiro Ohmi (Tokyo Tech) |
| (12) |
11:40-12:05 |
Effect of peripheral region on the electrical properties of pentacene-based organic field-effect transistors with HfON gate insulator SDM2011-108 |
Min Liao, Hiroshi Ishiwara, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) |
| |
12:05-13:10 |
Lunch Break ( 65 min. ) |
| (13) |
13:10-14:00 |
[Invited Talk]
Experiment-Integrated Multi-scale, Multi-physics Computational Chemistry Methods for Silicon-Materials and Devices SDM2011-109 |
Akira Miyamoto, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Hiromitsu Takaba, Sumio Kozawa (Tohoku Univ.) |
| (14) |
14:00-14:50 |
[Invited Talk]
Design Framework for Parameter Fluctuation in MOSFET Damaged by Ion Bombardment during Plasma Etching SDM2011-110 |
Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, Kouichi Ono (Kyoto Univ.) |
| (15) |
14:50-15:15 |
Electrical Characterization Techniques for Si Substrate Damage during Plasma Etching SDM2011-111 |
Yoshinori Nakakubo, Koji Eriguchi, Asahiko Matsuda, Yoshinori Takao, Kouichi Ono (Kyoto Univ.) |
| |
15:15-15:25 |
Break ( 10 min. ) |
| (16) |
15:25-15:50 |
High Purity Metal Organic Gas Distribution System SDM2011-112 |
Satoru Yamashita, Hidekazu Ishii, Yoshinobu Shiba, Masafumi Kitano, Yasuyuki Shirai, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
| (17) |
15:50-16:15 |
Performance Evaluation of 3D FPGA using Through Silicon Via SDM2011-113 |
Naoto Miyamoto (Tohoku Univ.), Yohei Matsumoto (Tokyo Univ. of Marine Science and Technology), Hanpei Koike (AIST), Tadayuki Matsumura, Kenichi Osada, Yahoko Nakagawa (ASET), Tadahiro Ohmi (Tohoku Univ.) |
| (18) |
16:15-16:40 |
Silicon Wafer Wet Etching for Plug Protrusion of 3D chip-stacking technology with Through Silicon Via SDM2011-114 |
Kazuhiro Yoshikawa (PretechAT), Tatsuro Yoshida, Kazuki Soeda, Ryousuke Hiratuka, Tadahiro Ohmi (Tohoku Univ.) |
| Announcement for Speakers |
| General Talk (25) | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Invited Talk (50) | Each speech will have 40 minutes for presentation and 10 minutes for discussion. |
| Special Talk (90) | Each speech will have 80 minutes for presentation and 10 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Yukinori Ono(NTT)
Tel 046-240-2641 Fax 046-240-4317
E- : o         |
Last modified: 2011-08-21 12:03:35
|
Notification: Mail addresses are partially hidden against SPAM.
|