|
|
| Chair |
|
Shigeyoshi Watanabe (Shonan Inst. of Tech.) |
| Vice Chair |
|
Toshihiro Sugii (Fujitsu Microelectronics) |
| Secretary |
|
Hisahiro Anzai (Sony), Tetsuro Endo (Tohoku Univ.) |
| Assistant |
|
Katsunori Onishi (Kyushu Inst. of Tech.), Yukinori Ono (NTT) |
|
| Conference Date |
Thu, Oct 29, 2009 14:00 - 19:45
Fri, Oct 30, 2009 09:30 - 16:15 |
| Topics |
Semiconductor process science and new technology |
| Conference Place |
New Industry Creation Hatchery Center (NICHE) |
| Address |
Aza-Aoba6-6-10, Aramaki, Aobaku, Sendai, 980-8579, Japan |
| Transportation Guide |
http://www.fff.niche.tohoku.ac.jp/index_e.html |
Contact
Person |
Tohoku University Ass. Prof. Tetsuya Goto
+81-22-795-3977 |
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Thu, Oct 29 PM
14:00 - 19:45 |
| (1) |
14:00-14:30 |
High current drivability transistors with optimized silicides for n+- and p+-Si  SDM2009-117 |
Yukihisa Nakao, Rihito Kuroda, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ) |
| (2) |
14:30-15:00 |
A study on Improvement of Thermal Stability for PtSi Alloying with Hf Utilizing Two-Step Silicidation Process SDM2009-118 |
Jun Gao, Jumpei Ishikawa, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) |
| (3) |
15:00-15:30 |
HfN/HfON Gate Stacks by ECR Sputtering SDM2009-119 |
Takahiro Sano, Takato Ohnishi, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) |
| (4) |
15:30-16:00 |
Silicon Wafer Thinning Technology for Three-Dimensional Integrated Circuit by Wet Etching SDM2009-120 |
Kazuhiro Yoshikawa, Tomotsugu Ohashi, Tatsuro Yoshida, Takenao Nemoto, Tadahiro Ohmi (Tohoku Univ.) |
| |
16:00-16:15 |
Break ( 15 min. ) |
| (5) |
16:15-16:45 |
Tribological Study for Low Shear Force CMP Process on Damascene Interconnects SDM2009-121 |
Xun Gu, Takenao Nemoto (Tohoku Univ.), Yasa Adi Sampurno (Univ. of Arizona/Araca,Inc.), Jiang Cheng, Sian Theng (Araca,Inc.), Akinobu Teramoto (Tohoku Univ.), Ricardo Duyos Mateo, Leonard Borucki (Araca,Inc.), Yun Zhuang, Ara Philipossian (Univ. of Arizona/Araca,Inc.), Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
| (6) |
16:45-17:15 |
Current Voltage Characteristics of Si-MESFET on SOI Substrate SDM2009-122 |
Toshiyuki Abe, Yuichiro Tanushi, Shin-Ichiro Kuroki, Koji Kotani, Takashi Ito (Tohoku Univ.) |
| (7) |
17:15-17:45 |
Statistical Analysis of Random Telegraph Signal Using a Large-Scale Array TEG with a Long Time Measurement SDM2009-123 |
Takafumi Fujisawa, Kenichi Abe, Syunichi Watabe, Naoto Miyamoto, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
| |
17:45-19:45 |
Banquet ( 120 min. ) |
Fri, Oct 30 AM
09:30 - 16:15 |
| (8) |
09:30-10:00 |
An Analysis of Carrier Transfer in Conjugated Polymers by Luminescence Computational Chemistry SDM2009-124 |
Itaru Yamashita, Kazumi Serizawa, Hiroaki Onuma, Ai Suzuki, Ryuji Miura, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ) |
| (9) |
10:00-10:30 |
Computational Simulation for High Performance Protecting Layer of Plasma Displays SDM2009-125 |
Kazumi Serizawa, Hiroaki Onuma (Tohoku Univ.), Hiromi Kikuchi (Tohoku Univ./Hiroshima Univ.), Kazuma Suesada, Masaki Kitagaki (Hiroshima Univ.), Itaru Yamashita, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo (Tohoku Univ.), Hiroshi Kajiyama (Hiroshima Univ.), Akira Miyamoto (Tohoku Univ.) |
| (10) |
10:30-11:00 |
Prediction of emission peak wavelength of Eu2+-doped phosphors using quantum chemistry and QSPR method SDM2009-126 |
Hiroaki Onuma, Itaru Yamashita, Kazumi Serizawa, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) |
| (11) |
11:00-11:30 |
Investigation of characteristics of pentacene-based MOSFETs structures SDM2009-127 |
Young-Uk Song, Shun-ichiro Ohmi, Hiroshi Ishiwara (Tokyo Inst. of Tech.) |
| (12) |
11:30-12:00 |
Crystallization of Amorphous Silicon Films on Glass Substrate by Heated Gas Beam Annealing SDM2009-128 |
Yuichiro Tanushi, Yosuke Kawano, Shin-Ichiro Kuroki, Koji Kotani (Tohoku Univ), Naomi Mura, Kimihisa Yamakami, Yuji Furumura (Philtech Inc.), Takashi Ito (Tohoku Univ) |
| |
12:00-13:00 |
Lunch ( 60 min. ) |
| (13) |
13:00-13:30 |
Recovery from Reactive Ion Etching Damage in SiO2 Films SDM2009-129 |
Nobuhito Kawada, Satoshi Nagashima, Toru Ichikawa, Hiroshi Akahori (Toshiba Corp.) |
| (14) |
13:30-14:00 |
Low frequency noise in Si(100) and Si(110) p-channel MOSFETs SDM2009-130 |
Philippe Gaubert, Akinobu Teramoto, Tadahiro Ohmi (Tohoku Univ.) |
| (15) |
14:00-14:30 |
A study on improvement of electrical characteristics for low temperature SiO2 film SDM2009-131 |
Hidenobu Nagashima, Hiroshi Akahori (TOSHIBA) |
| |
14:30-14:45 |
Break ( 15 min. ) |
| (16) |
14:45-15:15 |
Electrochemical Etching Processes of Semiconductors SDM2009-132 |
Kingo Itaya, Shinichirou Kobayashi, Rui Wen, Taketoshi Minato (Tohoku Univ.) |
| (17) |
15:15-15:45 |
Oxy-nitridation Simulation of Silicon Surface Using Antomated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method SDM2009-133 |
Hideyuki Tsuboi, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) |
| (18) |
15:45-16:15 |
Study on compositional transition layers at SiO2/Si interface formed by radical oxidation SDM2009-134 |
Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro, Yukako Kato (JASRI) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 10 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Hisahiro Ansai(Sony)
Tel 046-201-3297 Fax046-202-6572
E- : Hi    Ani   ny |
Last modified: 2009-08-25 13:41:25
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