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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Shigeyoshi Watanabe (Shonan Inst. of Tech.)
Vice Chair Toshihiro Sugii (Fujitsu Microelectronics)
Secretary Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony)
Assistant Syunichiro Ohmi (Tokyo Inst. of Tech.)

Technical Committee on Organic Molecular Electronics (OME) [schedule] [select]
Chair Kazuhiro Kudo (Chiba Univ.)
Vice Chair Toru Maruno (NTT)
Secretary Takaaki Manaka (Tokyo Inst. of Tech.), Tohru Kubota (NICT)
Assistant Hiroaki Usui (Tokyo Univ. of Agric. and Tech.)

Conference Date Fri, Apr 24, 2009 13:30 - 17:30
Topics TFT Materials, Devices, Applications, Analysis and Others related to SDM and OME activity 
Conference Place  
Dr. Naoki Matsuda
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Fri, Apr 24 PM 
13:30 - 17:30
(1) 13:30-13:55 Gas sensor application using organic transistor with gas adsorptive polymeric gate Wataru Takashima, Naritoshi Sawada, Keiichi Kaneto (Kyushu Insti. Tech.)
(2) 13:55-14:20 Solution preparation effect on n-type field-effect-transistor characteristics using PCBM SDM2009-1 OME2009-1 Kosuke Hamachi, Takeomi Morita, Shuichi Nagamatsu, Wataru Takashima (Kyushu Inst. of Tech.), Shuishiro Kuwajima (Kyoto Uni.), Keiichi Kaneto (Kyushu Inst. of Tech.)
(3) 14:20-14:45 New semiconductor compound based on pyrene Toshiya Nagase, Sinya Oku, Shuichi Nagamatsu, Wataru Takashima, Tetsuzi Moriguchi, Keiichi Kaneto (Kyusyu Inst. Tech.)
(4) 14:45-15:10 Electrochemical activity of Polyaniline in high pH solution SDM2009-2 OME2009-2 Kazuo Tominaga, Hikaru Hashimoto, Wataru Takashima, Keiichi Kaneto (Kyushu Inst. of Tech.)
(5) 15:10-15:35 Investigation of SAM treatment on gate insulator in solution processed organic thin-film transistor SDM2009-3 OME2009-3 Yoshinori Horii (PRI, AIST/Graduate School of Eng., Tottori Univ.), Mitsuhiro Ikawa, Koichi Sakaguchi, Masayuki Chikamatsu, Yuji Yoshida, Reiko Azumi (PRI, AIST), Hiroshi Mogi (Japan Chemical Innovation Inst./Shin-Etsu Chemical), Masahiko Kitagawa, Hisatoshi Konishi (Graduate School of Eng., Tottori Univ.), Kiyoshi Yase (PRI, AIST)
(6) 15:35-16:00 Electrocatalytic activity of heme proteins at ITO electrodes SDM2009-4 OME2009-4 Yusuke Ayato, Naoki Matsuda (AIST)
  16:00-16:15 Break ( 15 min. )
(7) 16:15-16:40 Low-Temperature Growth of Silicon-germanium on Glass by Aluminum Induced Layer Exchange SDM2009-5 OME2009-5 Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.)
(8) 16:40-17:05 Crystallization and annealing of heavily doped p-type Si film and electronic properties SDM2009-6 OME2009-6 Takashi Noguchi, Tomoyuki Miyahira (Univ. of the Ryukyus), Toshiharu Suzuki (SEN)
(9) 17:05-17:30 Metal Induced Lateral Crystallization of PECVD a-Si and Its Impact on TFT Performance SDM2009-7 OME2009-7 Shintaro Kanoh, Sho Nagata, Gou Nakagawa, Tanemasa Asano (Kyushu Univ.)

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Shigeru KAWANAKA (Toshiba)
TEL 045-776-5670, FAX 045-776-4104
E- geba 
OME Technical Committee on Organic Molecular Electronics (OME)   [Latest Schedule]
Contact Address  

Last modified: 2013-06-28 23:12:29

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