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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Takahiro Shinada (Tohoku Univ.)
Vice Chair Hiroshige Hirano (TowerJazz Panasonic)
Secretary Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (KIOXIA)
Assistant Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.)

Technical Committee on Organic Molecular Electronics (OME) [schedule] [select]
Chair Yutaka Majima (Tokyo Inst. of Tech.)
Vice Chair Toshiki Yamada (NICT)
Secretary Dai Taguchi (Tokyo Inst. of Tech.), Hirotake Kajii (Osaka Univ.)
Assistant Toshihiko Kaji (Tokyo Univ. of Agriculture and Tech.), Yoshiyuki Seike (Aichi Inst. of Tech.)

Conference Date Mon, Apr 13, 2020 13:00 - 17:40
Tue, Apr 14, 2020 09:10 - 11:40
Topics Thin film devices (Si, compound, organic, flexible), Biotechnology, Materials, Characterization, etc. 
Conference Place Okinawa Seinen Kaikan 
Address 2-15-23 Kume, Naha-shi, Okinawa 900-0033, Japan
Taizoh SADOH (Kyushu University)
Announcement This workshop has been cancelled. The technical report will not be issued.
Registration Fee This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM, OME.

Mon, Apr 13 PM 
13:00 - 17:40
(1) 13:00-13:30 [Invited Talk]
Twin formation mechanism in growth of single crystal Si strip by uCLBS method and influence of precursor Si films
Wenchang Yeh, Toshiki Shirakawa (Shimane Univ.)
(2) 13:30-14:00 [Invited Talk]
Low-Temperature Crystallization of Group Four Semiconductor Thin Film and Thin-Film Transistor Utilizing Tunnel Injection
Naoto Matsuo (Univ Hyogo)
(3) 14:00-14:20 Metal Source/Drain Structure TFTs using poly-Si Crystallized by Blue Multi-Laser Diode Annealing Tatsuya Okada, Takashi Noguchi (Univ. Ryukyus)
(4) 14:20-14:50 [Invited Talk]
Low temperature crystallization of silicon thin film and its application to thin film transistor
Yukiharu Uraoka (NAIST)
(5) 14:50-15:10 Issues for crystallization of SI films Noguchi Takashi, Okada Tatsuya (Univ. Ryukyus)
  15:10-15:20 Break ( 10 min. )
(6) 15:20-15:50 [Invited Talk]
Transistor application of polycrystalline Ge-based thin films
Kaoru Toko (Univ. of Tsukuba)
(7) 15:50-16:20 [Invited Talk]
Atmospheric Pressure Thermal Plasma Jet Crystallization and Electrical Characteristics of Phosphorus-doped Germanium Films on Insulator
Seiichiro Higashi (Hiroshima Univ.)
(8) 16:20-16:50 [Invited Talk]
Improving the characteristics of graphene TFT using graphene/Ni compound semiconductor hetero-junction
Kazunori Ichikawa (NIT Matsue Col)
(9) 16:50-17:20 [Invited Talk]
Fabrication of MoS2 and WS2 films by chemical solution process for thin film transistors
Joonam Kim, Takahiro Nakajima, Yuki Kobayashi, Ken-ichi Haga, Eisuke Tokumitsu (JAIST)
(10) 17:20-17:40 Effects of a-Si under-layer on solid-phase crystallization of GeSn/insulator Yuta Tan, Daiki Tsuruta, Taizoh Sadoh (Kyushu univ.)
Tue, Apr 14 AM 
09:10 - 11:40
(11) 09:10-09:30 In situ observation of molecules adsorbed on solid/liquid interfaces Naoki Matsuda, Hirotaka Okabe (AIST)
(12) 09:30-09:50 EFISHG measurement system for study of triboelectric generation and visualizing electronic charge due to triboelectrification and peeling-electrification Dai Taguchi, Takaaki Manaka, Mitsumasa Iwamoto (Tokyo Tech)
(13) 09:50-10:10 Analysis of polarization mechanism of chiral perovskites using nonlinear optical measurement Taishi Noma (RIKEN)
(14) 10:10-10:40 [Invited Talk]
TFT LCD displays and it related glass substratge attributes
Taketsugu Itoh (IDC)
(15) 10:40-11:10 [Invited Talk]
Oxide vs. poly-Si TFTs
Mamoru Furuta (KUT)
(16) 11:10-11:40 [Invited Talk]
Development of oxide thin-film transistors for large-sized flexible displays
Hiroshi Tsuji, Mitsuru Nakata, Tatsuya Takei, Masashi Miyakawa, Yoshiki Nakajima, Takahisa Shimizu (NHK)

Announcement for Speakers
General Talk (20)Each speech will have 15 minutes for presentation and 5 minutes for discussion.
Invited Talk (35)Each speech will have 25 minutes for presentation and 10 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Tetsu Morooka(KIOXIA Corp.)
Tel 059-390-7451 Fax 059-361-2739
E-: oxia 
OME Technical Committee on Organic Molecular Electronics (OME)   [Latest Schedule]
Contact Address  

Last modified: 2020-03-02 13:41:18

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