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Technical Committee on Electron Devices (ED) [schedule] [select]
Chair Kunio Tsuda (Toshiba)
Vice Chair Michihiko Suhara (TMU)
Secretary Manabu Arai (New JRC), Masataka Higashiwaki (NICT)
Assistant Toshiyuki Oishi (Saga Univ.), Tatsuya Iwata (TUT)

Technical Committee on Component Parts and Materials (CPM) [schedule] [select]
Chair Fumihiko Hirose (Yamagata Univ.)
Vice Chair Mayumi Takeyama (Kitami Inst. of Tech.)
Secretary Nobuyuki Iwata (Nihon Univ.), Yuichi Nakamura (Toyohashi Univ. of Tech.)
Assistant Yuichi Akage (NTT)

Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Tatsuya Kunikiyo (Renesas)
Vice Chair Takahiro Shinada (Tohoku Univ.)
Secretary Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas)
Assistant Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY)

Conference Date Thu, May 24, 2018 13:30 - 16:40
Topics Crystal growth, characterization, and devices (compound semiconductors, Si, SiGe, opto-electrical materials), and others 
Conference Place Venture Business Laboratory, Toyohashi Univ. Tech. 
Transportation Guide
Prof. Tatsuya Iwata, Toyohashi Univ. Tech.
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Registration Fee This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on ED, CPM, SDM.

Thu, May 24 PM 
13:30 - 16:40
(1) 13:30-13:55 Fabrication and characterization of flexible organic thermoelectric materials ED2018-14 CPM2018-1 SDM2018-9 Naoki Kishi, Satoshi Hibi, Yuta Yoshida, Keisuke Ono, Yuma Sawada, Hiroki Kunieda, Yuya Kondo (NITech)
(2) 13:55-14:20 Fabrication of Cu-O Thin Films by Galvanostatic Electrochemical Deposition from Weakly Acidic Solutions ED2018-15 CPM2018-2 SDM2018-10 mansoureh keikhaei, Masaya Ichimura (NIT)
(3) 14:20-14:45 MEMS bio sensor using suspended graphene fabricated by low-pressure dry transfer technique ED2018-16 CPM2018-3 SDM2018-11 Shin Kidane, Hayato Ishida, Kazuaki Sawada (Toyohashi Univ. of Technol.), Kazuhiro Takahashi (Toyohashi Univ. of Technol./JST-PRESTO)
(4) 14:45-15:10 Growth of high quality InSb channel layer with InxGa1-xSb heteroepitaxial films on Si(111) ED2018-17 CPM2018-4 SDM2018-12 A. A. Mohammad Monzur-Ul-Akhir, Masayuki Mori, Koichi Maezawa (University of Toyama)
  15:10-15:25 Break ( 15 min. )
(5) 15:25-15:50 The characterization of GaN homo-epitaxial layers grown on GaN substrates by using FT-IR ED2018-18 CPM2018-5 SDM2018-13 Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida (Sciocs)
(6) 15:50-16:15 Temperature dependence of hydrogen-related donor in FZ-Silicon ED2018-19 CPM2018-6 SDM2018-14 Akira Kiyoi, Katsumi Nakamura (Mitsubishi Electric Corp.)
(7) 16:15-16:40 Reduction of threading dislocation density in Ge layers on Si by introducing tunnel-shaped voids ED2018-20 CPM2018-7 SDM2018-15 Motoki Yako (Univ. of Tokyo), Yasuhiko Ishikawa (Toyohashi Univ. of Tech.), Kazumi Wada (Massachusetts Inst. Tech.)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Devices (ED)   [Latest Schedule]
Contact Address Manabu Arai(New Japan Radio Co.,Ltd)
TEL:+81-049-278-1441 FAX:+81-49-278-1269
Masataka Higashiwaki (NICT)
TEL : +81-42-327-6092 Fax : +81-42-327-5527
E--mail : m 
CPM Technical Committee on Component Parts and Materials (CPM)   [Latest Schedule]
Contact Address  
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E--mail: e3 

Last modified: 2018-03-17 15:41:11

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