|
|
| Chair |
|
Tanemasa Asano |
| Vice Chair |
|
Toshihiro Sugii |
| Secretary |
|
Morifumi Ohno, Shigeru Kawanaka |
| Assistant |
|
Yuichi Matsui |
|
|
|
| Chair |
|
Shuichi Fukuda |
| Vice Chair |
|
Shigeru Yanagi |
| Secretary |
|
Kazuaki Wakai, Tetsushi Yuge |
| Assistant |
|
Yoshiyuki Ihara, Yoshino Fukai |
|
|
|
| Chair |
|
Takao Waho |
| Vice Chair |
|
Masaaki Kuzuhara |
| Secretary |
|
Tsuyoshi Tanaka, Manabu Arai |
| Assistant |
|
Shin-ichiro Takatani, Koichi Murata |
|
| Conference Date |
Fri, Nov 24, 2006 13:00 - 16:55 |
| Topics |
|
| Conference Place |
|
Contact
Person |
06-6345-6351 |
Fri, Nov 24 PM
13:00 - 16:55 |
| (1) |
13:00-13:45 |
[Invited Talk]
Fault diagnosis technology based on transistor behavor analysis |
Masaru Sanada (KUT) |
| (2) |
13:45-14:10 |
* |
Shunsuke Kunimatsu, Akifumi Imai (Kyoto Univ.), Kensuke Akiyama (Kanagawa Industrial Technology Center), Yoshihito Maeda (Kyoto Univ.) |
| (3) |
14:10-14:35 |
|
Takafumi Jonishi, Yuichiro Ando, Yoshihito Maeda (Kyoto Univ.) |
| (4) |
14:35-15:00 |
Hot-carrier reliability in Trench Lateral Power MOSFETs |
Mutsumi Sawada, Shinichiro Matsunaga (Fuji Electric AT), Masaharu Yamaji, Akio Kitamura (Fuji Electric DT), Naoto Fujishima (Fuji Electric AT) |
| |
15:00-15:15 |
Break ( 15 min. ) |
| (5) |
15:15-15:40 |
Effects of heterointerface flatness on device performance of InP-based HEMT
-- Reduction of interface roughness scattering using (411)A-oriented substrate -- |
Issei Watanabe (NICT), Keisuke Shinohara (Rockwell), Takahiro Kitada (Univ.of Tokushima), Satoshi Shimomura (Ehimeiv.), Akira Endoh, Yoshimi Yamashita, Takashi Mimura (Fujitsu Labs.), Satoshi Hiyamizu (Osaka Univ./Nara National College of Tech.), Toshiaki Matsui (NICT) |
| (6) |
15:40-16:05 |
Surface passivation film dependence of 1/f noise characteristic in AlGaN/GaN HEMT |
Takanori Matsushima, Masahiro Nakajima, Kazuki Nomoto, Masataka Satoh, Tohru Nakamura (Hosei Univ.) |
| (7) |
16:05-16:30 |
|
Seiya Kasai, Alberto F. Basile, Tamotsu Hashizume (Hokkaido Univ.) |
| (8) |
16:30-16:55 |
Surface Passivation of AlGaN/GaN HFETs by a Sputtered AlN Thin Film |
Hiroaki Ueno, Tomohiro Murata, Hidetoshi Ishida, Tetsuzo Ueda, Yasuhiro Uemoto, Tsuyoshi Tanaka, Kaoru Inoue (Panasonic) |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Yasushiro Nishioka (Nihon University, College of Science and Technology)
TEL047-469-6482,FAX047-467-9504
E- :    e   t n-u ,a  cmsk  |
| R |
Technical Committee on Reliability (R) [Latest Schedule]
|
| Contact Address |
Kazuaki Wakai(NHK)
TEL0480-85-1118,FAX0480-85-1508
E-:  ik-dm  |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Tsuyoshi Tanaka（Matsushita）
TEL: 075-956-9083, FAX: 075-956-9110
E-:   erlci
Manabu Arai（New JRC）
TEL: 049-278-1477、FAX: 049-278-1419
E-:   injr
Shinichiro Takatani（Hitachi）
TEL: 049-278-1477、FAX: 049-278-1419
E-: injr
Koichi Murata（NTT)
TEL：046-240-2871、FAX：046-270-2872
E-：  aecl |
Last modified: 2006-09-26 11:48:38
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