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Technical Committee on Electron Devices (ED) [schedule] [select]
Chair Hiroki Fujishiro (Tokyo Univ. of Science)
Vice Chair Seiya Sakai (Hokkaido Univ.)
Secretary Junji Kotani (Fjitsu Lab.), Takuya Tsutsumi (NTT)
Assistant Ryota Isonoi (SCIOCS), Yoshitugu Yamamoto (Mitsubishi Electric)

Technical Committee on Component Parts and Materials (CPM) [schedule] [select]
Chair Yuichi Nakamura (Toyohashi Univ. of Tech.)
Vice Chair Hideki Nakazawa (Hirosaki Univ.)
Secretary Tomoaki Terasako (Ehime Univ.), Mayumi Takeyama (Kitami Inst. of Tech)
Assistant Yasuo Kimura (Tokyo Univ. of Tech.), Fumihiko Hirose (Yamagata Univ.), Noriko Bamba (Shinshu Univ.)

Technical Committee on Lasers and Quantum Electronics (LQE) [schedule] [select]
Chair Toshitada Umezawa (NICT)
Vice Chair Junichi Takahara (Osaka Univ.)
Secretary Toru Segawa (NTT), Kazuue Fujita (Hamamatsu Photonics)
Assistant Shinsuke Tanaka (Fujitsu), Nobuhiko Nishiyama (Tokyo Inst. of Tech.)

Conference Date Thu, Nov 25, 2021 10:00 - 17:20
Fri, Nov 26, 2021 13:00 - 17:20
Topics  
Conference Place  
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Registration Fee This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on ED, CPM, LQE.

Thu, Nov 25 AM 
10:00 - 11:45
(1) 10:00-10:05  
(2) 10:05-10:30 Chemical Bath Deposition of Cu<sub>2</sub>O films on ITO/glass substrates ED2021-15 CPM2021-49 LQE2021-27 Taishu kamimoto, Takuma Ohmoto, Tomoaki Terasako (Ehime Univ.)
(3) 10:30-10:55 Vapor-Liquid-Solid Growth of ZnGa<sub>2</sub>O<sub>4</sub> Nanostructures and Their Structural and Photoluminescence Properties ED2021-16 CPM2021-50 LQE2021-28 Tomoaki Terasako, Takeshi Yoneda (Ehime Univ.), Naohiro Takahashi, Masakazu Yagi (Natl. INst. Technol., Kagawa Coll.)
(4) 10:55-11:20 Investigation of defects suppression in Cu halide thin films by emission spectroscopy ED2021-17 CPM2021-51 LQE2021-29 Chikashi Fujishima, Kunihiko Tanaka, Kaito Watanabe, Naoya Tujimoto (Nagaoka Univ Tech)
(5) 11:20-11:45 Influence of Annealing on Ultraviolet Light Detecting Properties of PEDOT:PSS/ZnO Nanorods/ZnO:Ga Heterostructures ED2021-18 CPM2021-52 LQE2021-30 Kohei Kobayashi, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Kochi Univ. Technol.)
  11:45-13:00 Break ( 75 min. )
Thu, Nov 25 PM 
13:00 - 14:35
(1) 13:00-13:05  
(2) 13:05-13:30 [Encouragement Talk]
Optimization of buried growth and optical properties for nanowire-based light emitter ED2021-19 CPM2021-53 LQE2021-31
Yoshiya Miyamoto, Naoki Sone, Renji Okuda, Weifang Lu, Kazuma Ito, Shiori Yamamura, Yukimi Jinno, Nanami Nakayama, Sae Katsuro, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ.)
(3) 13:30-13:55 Indium Composition Dependence of Internal Quantum Efficiency in InGaN Quantum-Wells Measured by Simultaneous Microscopic Photoacoustic and Photoluminescence Spectroscopy ED2021-20 CPM2021-54 LQE2021-32 Keito Mori, Yuchi Takahashi, Yuya Morimoto, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.)
(4) 13:55-14:20 Waveguide loss measurements in III-nitride laser structures ED2021-21 CPM2021-55 LQE2021-33 Kenta Ogasawara (KIT), Shigeta Sakai, Tadashi Okumura, Koichi Naniwae (Ushio Inc), Atsushi A. Yamaguchi (KIT)
  14:20-14:35 Break ( 15 min. )
Thu, Nov 25  
14:35 - 16:05
(5) 14:35-15:00 Photoluminescence study of high-purity GaN homoepitaxial layers grown by hydride vapor phase epitaxy ED2021-22 CPM2021-56 LQE2021-34 Hiroto Imashiro, Ryo Yamahida, Hironao Kanamori, Ryuichi Watanabe (KIT), Takeshi Kimura, Taichiro Konno, Hajime Fujikura (SCIOCS), Atsushi A. Yamaguchi (KIT)
(6) 15:00-15:25 Theoretical modeling of temperature-dependent PL spectra in InGaN quantum wells ED2021-23 CPM2021-57 LQE2021-35 Shunya Hakamata, Takashi Fujita, Ryuichi Watanabe, Atsushi A Yamaguchi (KIT)
(7) 15:25-15:50 Optical characterization of c-plane Al0.83In0.17N/GaN lattice-matched heterostructures ED2021-24 CPM2021-58 LQE2021-36 Liyang Li, Kohei Shima (Tohoku Univ.), Mizuki Yamanaka (Nagoya Inst. Tech.), Kazunobu Kojima (Tohoku Univ.), Takashi Egawa (Nagoya Inst. Tech.), Akira Uedono (Univ. of Tsukuba), Ishibashi Shoji (AIST), Tetsuya Takeuchi (Meijo Univ.), Makoto Miyoshi (Nagoya Inst. Tech.), Shigefusa Chichibu (Tohoku Univ.)
  15:50-16:05 Break ( 15 min. )
Thu, Nov 25  
16:05 - 17:20
(8) 16:05-16:30 Substrate off-cut angle dependence on fabrication of high-temperature annealed a-plane AlN on r-plane sapphire ED2021-25 CPM2021-59 LQE2021-37 Kota Shibutani, Kenjiro Uesugi, Shiyu Xiao, Kanako Shojiki, Shigeyuki Kuboya, Toru Akiyama, Hideto Miyake (Mie Univ.)
(9) 16:30-16:55 Growth of 220-nm-band-emission AlGaN Quantum Wells Using Annealed Sputtered AlN Template ED2021-26 CPM2021-60 LQE2021-38 Shoya Ishihara, Shigeyuki Kuboya, Kanako Shojiki, Kenjiro Uesugi, Xiao Shiyu, Hideto Miyake (Mie Univ.)
(10) 16:55-17:20 Evaluation of PV performance of GaInN besed photovoltaic cells under monochromatic light illumination for optical wireless power transmission system ED2021-27 CPM2021-61 LQE2021-39 Taiki Nakabayashi, Kousuke Yamamoto, Pradip Dalapati, Takashi Egawa, Makoto Miyoshi (NIT)
Fri, Nov 26 PM 
13:00 - 17:20
(11) 13:00-13:25 Two-dimensional characterization of Au/Ni/n-GaN Schottky contacts with different surface treatments by scanning internal photoemission microscopy ED2021-28 CPM2021-62 LQE2021-40 Kenji Shiojima (Univ. of Fukui), Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Edo Masaharu (Fuji electric co.)
(12) 13:25-13:50 Uniformity characterization of SiC, GaN, α-Ga₂O₃ Schottky contacts using scanning internal photoemission microscopy ED2021-29 CPM2021-63 LQE2021-41 Yuto Kawasumi (Univ. of Fukui), Fumimasa Horikiri, Noboru Fukuhara (SCIOCS Co.), Tomoyoshi Mishima (Hosei Univ.), Takashi Shinohe (FLOSFIA INC.), Kenji Shiojima (Univ. of Fukui)
(13) 13:50-14:15 Interface charge engineering in normally-off AlTiO/AlGaN/GaN field-effect transistors ED2021-30 CPM2021-64 LQE2021-42 Duong Dai Nguyen, Takehiro Isoda, Yuchen Deng, Toshi-kazu Suzuki (JAIST)
  14:15-14:30 Break ( 15 min. )
(14) 14:30-14:55 Estimation of electrical characteristics of normally-off type AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD ED2021-31 CPM2021-65 LQE2021-43 Keitaro Toda, Toshiharu Kubo, Takashi Egawa (NITech)
(15) 14:55-15:20 High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer ED2021-32 CPM2021-66 LQE2021-44 Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (NIT)
(16) 15:20-15:45 Fabrication and electrical property characterization of AlGaN channel HEMT on AlN template ED2021-33 CPM2021-67 LQE2021-45 Ryuichi Mori, Kenjiro Uesugi, Shegeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.)
  15:45-16:00 Break ( 15 min. )
(17) 16:00-16:25 Fabrication of Recessed-gate AlGaN/GaN HEMTs using Low-damage Contactless Photo-Electrochemical Etching ED2021-34 CPM2021-68 LQE2021-46 Masachika Toguchi, Kazuki Miwa (Hokkaido Univ.), Fumimasa Horikiri, Noboru Fukuhara, Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokkaido Univ.)
(18) 16:25-16:50 Fabrication of Recessed-gate AlGaInN/AlGaN HFETs utilizing a photo-electrochemical (PEC) etching. ED2021-35 CPM2021-69 LQE2021-47 Kosaku Ito, Yuto Komatsu, Masachika Toguchi (Hokkaido Univ.), Akiyoshi Inoue, Sakura Tanaka, Makoto Miyoshi (Nagoya Inst. of Tech), Taketomo Sato (Hokkaido Univ.)
(19) 16:50-17:15 Demonstration of E-mode operation in planar type EID-MOS-HEMT with normally depleted AlGaN/GaN epitaxial layer ED2021-36 CPM2021-70 LQE2021-48 Takuma Nanjo, Takashi Imazawa, Akira Kiyoi, Tetsuro Hayashida, Tatsuro Watahiki, Naruhisa Miura (Mitsubishi Electric Corp.)
(20) 17:15-17:20  

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Devices (ED)   [Latest Schedule]
Contact Address Toshiyuki Oishi(Saga Unv.)
TEL: +81-952-28-8642
E-: oi104cc-u
Tatsuya Iwata(Toyama Pref. Univ.)
TEL: +81-766-56-7500
E-: t_ipu- 
CPM Technical Committee on Component Parts and Materials (CPM)   [Latest Schedule]
Contact Address  
LQE Technical Committee on Lasers and Quantum Electronics (LQE)   [Latest Schedule]
Contact Address Toru Segawa (NTT)
TEL +81-46-240-2251
E-: hco 
Announcement Homepage of LQE is http://www.ieice.org/~lqe/jpn/welcome.html


Last modified: 2021-11-12 09:18:26


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