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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Tetsuro Endo (Tohoku Univ.)
Vice Chair Yasuo Nara (Fujitsu Semiconductor)
Secretary Yukinori Ono (NTT), Shintaro Nomura (Univ. of Tsukuba)
Assistant Yoshitaka Sasago (Hitachi)

Conference Date Thu, Nov 10, 2011 10:00 - 15:30
Fri, Nov 11, 2011 10:00 - 17:00
Topics Process, Device, Circuit Simulations, etc 
Conference Place  
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.
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Thu, Nov 10 AM 
10:00 - 11:45
  10:00-10:05 Opening Talk ( 5 min. )
(1) 10:05-10:55 [Invited Talk]
Equivalent circuit models for MEMS sensors and actuators based on electrical circuit simulator SDM2011-115
Hiroshi Toshiyoshi (Univ. of Tokyo)
(2) 10:55-11:45 [Invited Talk]
SISPAD 2011 Review SDM2011-116
Hirokazu Hayashi (Lapis Semi.)
  11:45-13:00 Lunch Break ( 75 min. )
Thu, Nov 10 PM 
13:00 - 15:30
(3) 13:00-13:50 [Invited Talk]
Phase-change memoy driven by poly-Si transistor enabling three-dimensional stacking SDM2011-117
Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi)
(4) 13:50-14:40 [Invited Talk]
Comprehensive Understanding of Random Telegraph Noise with Physics Based Simulation SDM2011-118
Yusuke Higashi, Nobuyuki Momo, Hisayo S. Momose, Tatsuya Ohguro, Kazuya Matsuzawa (Toshiba)
(5) 14:40-15:30 [Invited Talk]
Device Simulation of STM Carrier Profiling SDM2011-119
Koichi Fukuda, Masayasu Nishizawa, Tetsuya Tada (AIST), Leonid Bolotov (Tsukuba Univ.), Kaina Suzuki, Shigeo Sato (Fujitsu Semiconductor), Hiroshi Arimoto, Toshihiko Kanayama (AIST)
Fri, Nov 11 AM 
10:00 - 11:40
(6) 10:00-10:25 Simulation of Phonon Transport in Silicon Nanostructures Based on Monte-Carlo Method SDM2011-120 Kentaro Kukita (Osaka Univ.), Yoshinari Kamakura (Osaka Univ./JST)
(7) 10:25-10:50 Comparisons of Ballistic Device Performances of Si Nanowire and InAs Nanowire FETs based on First-Principles Band Structure Calculation SDM2011-121 Naoya Takiguchi, Shunsuke Koba, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.)
(8) 10:50-11:15 Analytical Compact Model Using Perturbation Method for Circuit Simulation of Ballistic and Quasi-ballistic Gate-All-Around MOSFET with Cylindrical Cross Section SDM2011-122 He Cheng (Nagoya Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Tatsuhiro Numata, Kazuo Nakazato (Nagoya Univ.)
(9) 11:15-11:40 Enhancement of current density in asymmetric horn-shaped channel
-- Ensemble Monte-Carlo/Molecular Dynamics Simulation --
SDM2011-123
Takefumi Kamioka (Waseda Univ./JST), Hiroya Imai (Waseda Univ.), Kenji Ohmori, Kenji Shiraishi (Univ. of Tsukuba/JST), Yoshinari Kamakura (Osaka Univ./JST), Takanobu Watanabe (Waseda Univ./JST)
  11:40-13:00 Lunch Break ( 80 min. )
Fri, Nov 11 PM 
13:00 - 15:05
(10) 13:00-13:50 [Invited Talk]
Usages of TCAD simulation on development of semiconductor for vehicles and future ploblems SDM2011-124
Hisashi Ishimabushi, Takashi Ueta, Masaru Nagao, Kimimori Hamada (TMC)
(11) 13:50-14:15 Investigation of Scaling Limit Due to Short Channel Effects and Channel Boosting Leakage in Bulk and SOI NAND Flash Memory Cells SDM2011-125 Kousuke Miyaji, Chinglin Hung, Ken Takeuchi (Univ. of Tokyo)
(12) 14:15-14:40 Design of a Fully-Parallel High-Density Nonvolatile TCAM Using MTJ Devices SDM2011-126 Akira Katsumata, Shoun Matsunaga, Takahiro Hanyu (Tohoku Univ.)
(13) 14:40-15:05 Design Technology of stacked Type Chain PRAM SDM2011-127 Sho Kato, Shigeyoshi Watanabe (SIT)
  15:05-15:20 Break ( 15 min. )
Fri, Nov 11 PM 
15:20 - 17:00
(14) 15:20-15:45 Gate Voltage Dependence of Channel Length Modulation Coefficient for Nanoscale MOSFETs SDM2011-128 Akira Hiroki, Jong Chul Yoon (Kyoto Institute of Tech.)
(15) 15:45-16:10 Higher-order Effects of Source and Drain Parasitic Resistances for Nanoscale MOSFETs SDM2011-129 Jong Chul Yoon, Akira Hiroki (Kyoto Institute of Tech.)
(16) 16:10-16:35 An Efficient Analysis of Large-Scale RLC Circuits with CMOS Loads SDM2011-130 Yuichi Tanji (Kagawa Univ.)
(17) 16:35-17:00 Study of pattern area reduction for standard cell with planar and SGT transistor SDM2011-131 Takahiro Kodama, Shigeyoshi Watanabe (SIT)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Yukinori Ono(NTT)
Tel 046-240-2641 Fax 046-240-4317
E--mail: o 


Last modified: 2011-10-13 09:07:14


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