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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Tatsuya Kunikiyo (Renesas)
Vice Chair Takahiro Shinada (Tohoku Univ.)
Secretary Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas)
Assistant Hiroya Ikeda (Shizuoka Univ.)

Conference Date Mon, Jan 30, 2017 10:00 - 16:30
Topics  
Conference Place Kikai Shinko Kaikan B3F Kenshuu-1 
Address 3-5-8, Shibakoen, Minato-ku, Tokyo, 105-0011, Japan.
Transportation Guide http://www.jspmi.or.jp/english/about/access.html
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Mon, Jan 30 AM 
10:00 - 16:30
(1) 10:00-10:30 [Invited Talk]
Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology SDM2016-130
Takahiro Mori, Hidehiro Asai, Junichi Hattori, Koichi Fukuda, Shintaro Otsuka, Yukinori Morita, Shin-ichi O'uchi, Hiroshi Fuketa, Shinji Migita, Wataru Mizubayashi, Hiroyuki Ota, Takashi Matuskawa (ANational Institute of Advanced Industrial ScieIST)
(2) 10:30-11:00 [Invited Talk]
Tunneling MOSFET Technologies using III-V/Ge Materials SDM2016-131
Shinichi Takagi, Daehwan Ahn, Munetaka Noguchi, Takahiro Gotow, Koichi Nishi, Min-Soo Kim, Mitsuru Takenaka (Univ. of Tokyo)
(3) 11:00-11:30 [Invited Talk]
Experimental Study on Polarization-Limited Operation Speed of Negative Capacitance FET with Ferroelectric HfO2 SDM2016-132
Masaharu Kobayashi, , , (Univ. of Tokyo)
(4) 11:30-12:00 [Invited Talk]
Fully Coupled 3-D Device Simulation of Negative Capacitance FinFETs for Sub 10 nm Integration SDM2016-133
Hiroyuki Ota, Tsutomu Ikegami, Junichi Hattori, Koichi Fukuda, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo)
  12:00-13:30 Lunch Break ( 90 min. )
(5) 13:30-14:00 [Invited Talk]
First Demonstration of FinFET Split-Gate MONOS for High-Speed and Highly-Reliable Embedded Flash in 16/14nm-node and Beyond SDM2016-134
Shibun Tsuda, Yoshiyuki Kawashima, Kenichiro Sonoda, Atsushi Yoshitomi, Tatsuyoshi Mihara, Shunichi Narumi, Masao Inoue, Seiji Muranaka, Takahiro Maruyama, Tomohiro Yamashita, Yasuo Yamaguchi (Renesas Electronics), Digh Hisamoto (Hitachi)
(6) 14:00-14:30 [Invited Talk]
Novel Voltage Controlled MRAM (VCM) with Fast Read/Write Circuits for Ultra Large Level Cache SDM2016-135
Yoichi Shiota (AIST), Hiroki Noguchi, Kazutaka Ikegami, Keiko Abe, Shinobu Fujita (Toshiba), Takayuki Nozaki, Shinji Yuasa (AIST), Yoshishige Suzuki (Osaka Univ.)
(7) 14:30-15:00 [Invited Talk]
Voltage-Control Spintronics Memory (VOCSM)Having Potentials of Ultra-Low Energy-Consumption and High-Density SDM2016-136
Hiroaki Yoda, , , , , , , , , , , , , , (Toshiba)
  15:00-15:30 Break ( 30 min. )
(8) 15:30-16:00 [Invited Talk]
General relationship for cation and anion doping effects on ferroelectric HfO2 formation SDM2016-137
Xu Lun, Shibayama Shigehisa, Izukashi Kazutaka, Nishimura Tomonori, Yajima Takeaki (Univ. of Tokyo), Migita Shinji (AIST), Toriumi Akira (Univ. of Tokyo)
(9) 16:00-16:30 [Invited Talk]
Novel Functional Passive Element for Future Analogue Signal Processing
-- Fabrication and Application of the VO2 Volatile Switch --
SDM2016-138
Takeaki Yajima, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo)

Announcement for Speakers
Invited TalkEach speech will have 25 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-: e3 


Last modified: 2016-12-16 14:59:58


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