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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Koichi Maezawa (Univ. of Toyama)
Vice Chair Kunio Tsuda (Toshiba)
Secretary Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST)
Assistant Manabu Arai (New JRC), Masataka Higashiwaki (NICT)

Conference Date Wed, Jan 20, 2016 10:30 - 16:20
Topics Power Devices and High-frequency Devices, Microwave, etc. 
Conference Place  
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Wed, Jan 20 AM 
10:30 - 16:20
(1) 10:30-10:55 [Invited Lecture]
Evaluation technology for SiC wafer and device characteristics ED2015-112
Makoto Kitabatake (FUPET)
(2) 10:55-11:20 [Invited Lecture]
Low On-resistance SiC-MOSFET with Blocking Voltage of 3.3kV and Realization of the World's First All-SiC Traction Inverter ED2015-113
Kenji Hamada, Shiro Hino, Naruhisa Miura, Hiroshi Watanabe, Shuhei Nakata, Eisuke Suekawa, Yuji Ebiike, Masayuki Imaizumi, Isao Umezaki, Satoshi Yamakawa (Mitsubishi Electric)
(3) 11:20-11:45 [Invited Lecture]
State-of-the-art technology of gallium oxide power devices ED2015-114
Masataka Higashiwaki, Man Hoi Wong, Keita Konishi (NICT), Kohei Sasaki (Tamura/NICT), Ken Goto (Tamura/TAT), Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu (TAT), Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi (Tamura)
  11:45-13:30 Break ( 105 min. )
(4) 13:30-13:55 [Invited Lecture]
The unique features of GaN power devices and the technologies to utilize their innate advantages ED2015-115
Ken Nakahara, Kentaro Chikamatsu, Atsushi Yamaguchi, Naotaka Kuroda (ROHM)
(5) 13:55-14:20 [Invited Lecture]
Estimation of RF-DC conversion efficiency of microwave power Shottky barrier diodes for rectenna by small equivalent circuit model
-- Comparison of semiconductor materials --
Toshiyuki Oishi, Makoto Kasu (Saga Univ.)
(6) 14:20-14:45 [Invited Lecture]
GaN Schottky Barrier Diode and Microwave Power Transmission ED2015-117
Yasuo Ohno (LaS)
  14:45-15:05 Break ( 20 min. )
(7) 15:05-15:30 [Invited Lecture]
Improvement in fmax of InP-based HEMTs for THz ICs ED2015-118
Tsuyoshi Takahashi, Yoichi Kawano, Kozo Makiyama, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara (Fujitsu Labs.)
(8) 15:30-15:55 Analysis of Millimeter Wave Oscillation in GaN HEMT Unit Cell ED2015-119 Shinsuke Watanabe, Shouhei Imai, Eigo Kuwata, Hidetoshi Koyama, Yoshitaka Kamo, Yoshitsugu Yamamoto (Mitsubishi Electric)
(9) 15:55-16:20 [Invited Lecture]
Development of GaN-HEMT for Microwave Applications ED2015-120
Takahisa Kawai (SEDI)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.
Invited LectureEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Koji Matsunaga(NEC)
TEL:+81-44-435-8348 FAX:+81-44-455-8253
E--mail: k-fpc
Toshikazu Suzuki (JAIST)
TEL : +81-761-51-1441 Fax : +81-761-51-1455
E--mail : sijaist 

Last modified: 2016-01-18 14:20:41

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