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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MW | 2024-01-25 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Electron State Analysis under Al2O3 Gate Oxide film in EID AlGaN/GaN MOS-HEMT Takuma Nanjo, Akira Kiyoi, Takashi Imazawa, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (Nagoya Inst. of Tech)  ED2023-68 MW2023-160 |
(To be available after the conference date) [more] | ED2023-68 MW2023-160 pp.11-14 |
| LQE, ED, CPM | 2023-11-30 13:05 |
Shizuoka | AlGaInN/GaN highhigh-electron mobility transistors with a thin unintentionally doped GaN channel and an AlN back barrier formed using a single single-crystal AlN substrate Tomoyuki Kawaide, Yoshinobu Kometani, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech) ED2023-14 CPM2023-56 LQE2023-54 |
A high-electron-mobility transistor (HEMT) structure with a strain-engineered quaternary AlGaInN barrier layer, a thin u... [more] | ED2023-14 CPM2023-56 LQE2023-54 pp.1-5 |
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| LQE, ED, CPM | 2023-11-30 13:30 |
Shizuoka | Fabrication of GaN HBTs using a quaternary AlGaInN emitter and a GaInN base Masaya Takimoto, Akira Mase, Kojima tomoki, Egawa Takashi, Miyoshi Makoto (Nagoya Inst.Tech.) ED2023-15 CPM2023-57 LQE2023-55 |
Heterojunction bipolar transistors (HBTs) using GaN-based semiconductors are considered to be promising next-generation ... [more] | ED2023-15 CPM2023-57 LQE2023-55 pp.6-10 |
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| LQE, ED, CPM | 2023-11-30 13:55 |
Shizuoka | Effects of surface treatments after gate recess etching on AlGaN/GaN MIS-HFETs with insulators formed by ALD Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Technol.) ED2023-16 CPM2023-58 LQE2023-56 |
Degradation of electrical characteristics due to etching damage during formation of recess structure has been an issue f... [more] | ED2023-16 CPM2023-58 LQE2023-56 pp.11-14 |
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| LQE, ED, CPM | 2023-11-30 17:10 |
Shizuoka | Device characteristics of GaInN-based photovoltaic cells fabricated on Free-Standing GaN substrate for optical wireless power transmission system Takahiro Fujiawa, Nan Hu, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.) ED2023-23 CPM2023-65 LQE2023-63 |
GaInN-based photovoltaic (PV) devices are highly promising for application to optical wireless power transmission (OWPT)... [more] | ED2023-23 CPM2023-65 LQE2023-63 pp.44-47 |
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| CPM, ED, SDM | 2023-05-19 15:40 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
Fabrication and evaluation of transfer-free graphene FETs on sapphire substrates using agglomeration phenomenon of Ni patterns with ultra-fine structure Ichiro Kato, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) ED2023-5 CPM2023-5 SDM2023-22 |
Using graphene as a FET requires transferring it to an insulating substrate, and defects may be introduced in the graphe... [more] | ED2023-5 CPM2023-5 SDM2023-22 pp.20-23 |
| MW, ED | 2023-01-27 13:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Demonstration of high current and high voltage E-mode operation in EID AlGaN/GaN MOS-HEMT Takuma Nanjo, Tomohiro Shinagawa, Tatsuro Watahiki, Naruhisa Miura, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (NITech) ED2022-93 MW2022-152 |
(To be available after the conference date) [more] | ED2022-93 MW2022-152 pp.36-39 |
| CPM, ED, LQE | 2022-11-24 14:55 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Fabrication and characterization of AlGaInN/GaN HEMTs on Single-Crystal AlN Substrate SakuraTanaka, Tomoyuki Kawaide, Akiyoshi Inoue, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.) ED2022-35 CPM2022-60 LQE2022-68 |
[more] | ED2022-35 CPM2022-60 LQE2022-68 pp.53-56 |
| CPM, ED, LQE | 2022-11-24 15:15 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Study on p-GaInN base layer and quaternary AlGaInN emitter layer for GaN HBTs Yusuke Iida, Akira Mase, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi (NITech) ED2022-36 CPM2022-61 LQE2022-69 |
GaN-based HBTs are very promising as next-generation high-frequency power devices. However, when considering the realiza... [more] | ED2022-36 CPM2022-61 LQE2022-69 pp.57-60 |
| CPM, ED, LQE | 2022-11-24 15:45 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Estimation of electrical characteristics of surface treatment after recess structure formation in AlGaN/GaN MIS-HEMTs Keitaro Toda, Toshiharu Kubo, Takashi Egawa (NITech) ED2022-37 CPM2022-62 LQE2022-70 |
Degradation of electrical characteristics due to etching damage during recess structure formation has been an issue for ... [more] | ED2022-37 CPM2022-62 LQE2022-70 pp.61-64 |
| CPM, ED, LQE | 2022-11-24 16:05 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
AlGaN/GaN vertical devices on Si substrate with highly resistive strained layer superlattice Takaya Koike, Koki Hayashi, Ryosuke Hayafuji, Toshiharu Kubo, Takashi Egawa (NIT) ED2022-38 CPM2022-63 LQE2022-71 |
[more] | ED2022-38 CPM2022-63 LQE2022-71 pp.65-68 |
| CPM, ED, LQE | 2022-11-25 11:25 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Growth temperature dependence of semipolar {11-22} AlInN/GaInN Takahiro Fujisawa, Taiki Nakabayashi, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.), Tetsuya Takeuchi (Meijo Univ.), Narihito Okada, Kazuyuki Tadatomo (Yamaguchi Univ.) ED2022-42 CPM2022-67 LQE2022-75 |
AlInN alloys are promising materials for GaN-based electronic and optical devices. In this study, AlInN layers with a th... [more] | ED2022-42 CPM2022-67 LQE2022-75 pp.81-84 |
| ED, CPM, LQE | 2021-11-25 15:25 |
Online | Online | Optical characterization of c-plane Al0.83In0.17N/GaN lattice-matched heterostructures Liyang Li, Kohei Shima (Tohoku Univ.), Mizuki Yamanaka (Nagoya Inst. Tech.), Kazunobu Kojima (Tohoku Univ.), Takashi Egawa (Nagoya Inst. Tech.), Akira Uedono (Univ. of Tsukuba), Ishibashi Shoji (AIST), Tetsuya Takeuchi (Meijo Univ.), Makoto Miyoshi (Nagoya Inst. Tech.), Shigefusa Chichibu (Tohoku Univ.) ED2021-24 CPM2021-58 LQE2021-36 |
Room-temperature (RT) time-resolved photoluminescence (PL) and spatially resolved cathodoluminescence (CL) measurements ... [more] | ED2021-24 CPM2021-58 LQE2021-36 pp.45-50 |
| ED, CPM, LQE | 2021-11-25 16:55 |
Online | Online | Evaluation of PV performance of GaInN besed photovoltaic cells under monochromatic light illumination for optical wireless power transmission system Taiki Nakabayashi, Kousuke Yamamoto, Pradip Dalapati, Takashi Egawa, Makoto Miyoshi (NIT) ED2021-27 CPM2021-61 LQE2021-39 |
GaInN-based photovoltaic (PV) devices are highly promising for application to optical wireless power transmission (OWPT)... [more] | ED2021-27 CPM2021-61 LQE2021-39 pp.59-62 |
| ED, CPM, LQE | 2021-11-26 14:30 |
Online | Online | Estimation of electrical characteristics of normally-off type AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD Keitaro Toda, Toshiharu Kubo, Takashi Egawa (NITech) ED2021-31 CPM2021-65 LQE2021-43 |
[more] | ED2021-31 CPM2021-65 LQE2021-43 pp.75-78 |
| ED, CPM, LQE | 2021-11-26 14:55 |
Online | Online | High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2021-32 CPM2021-66 LQE2021-44 |
In this study, we fabricated and characterized heterojunction field-effect transistors (HFETs) based on an Al0.36Ga0.64N... [more] | ED2021-32 CPM2021-66 LQE2021-44 pp.79-82 |
| LQE, CPM, ED | 2020-11-26 11:15 |
Online | Online | Study on p/n conductivity control of epitaxial AlInN films Taiki Nakabayashi, Haruka Takada, Takashi Egawa, Makoto Miyoshi (NIT), Tetsuya Takeuchi (Meijo Univ.) ED2020-4 CPM2020-25 LQE2020-55 |
In this study, we attempted the p/n conductivity control of epitaxial AlInN films grown by metalorganic chemical vapor d... [more] | ED2020-4 CPM2020-25 LQE2020-55 pp.13-16 |
| LQE, CPM, ED | 2020-11-26 11:35 |
Online | Online | Examination of GaN-based photodetectors for optical wireless power transmission system Kosuke Yamamoto, Pradip Dalapati, Takashi Egawa, Makoto Miyoshi (NIT) ED2020-5 CPM2020-26 LQE2020-56 |
Aiming at a high-efficiency photodetectors for the optical wireless power transmission system consisting of semiconducto... [more] | ED2020-5 CPM2020-26 LQE2020-56 pp.17-20 |
| LQE, CPM, ED | 2020-11-26 13:50 |
Online | Online | Estimation of electrical properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD Shunichi Yokoi, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.) ED2020-8 CPM2020-29 LQE2020-59 |
Since SiO2 has a large band gap of approximately 9 eV, the interface characteristics of the interface and gate leakage c... [more] | ED2020-8 CPM2020-29 LQE2020-59 pp.29-32 |
| CPM, ED, SDM | 2020-05-29 13:25 |
Aichi | Nagoya Institute of Technology (Cancelled, technical report was not issued) |
Reduction of dislocation density in AlGaN/GaN HEMT by SLS layer Shunsuke Urata, Hyeongsu Kim, Takashi Egawa (Nagoya Tech.) |
[more] | |
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