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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
EA, SIP, SP |
2019-03-14 10:50 |
Nagasaki |
i+Land nagasaki (Nagasaki-shi) |
Nearest sound source extraction for hearable devices Eiji Saito, Arata Kawamura (Kyoto Sangyo Univ.) EA2018-101 SIP2018-107 SP2018-63 |
In recent years, hearable devices have attracted attention. One of the important functions of hearable devices is to imp... [more] |
EA2018-101 SIP2018-107 SP2018-63 pp.13-18 |
ITE-MMS, ITE-CE, MRIS [detail] |
2012-01-19 15:15 |
Osaka |
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Spin injection into p-type Si using the spin pumping and spin transport in the Si at room temperature Kazuki Kubo, Eiji Shikoh (Osaka Univ.), Kazuya Ando, Eiji Saitoh (Tohoku Univ.), Teruya Shinjo, Masashi Shiraishi (Osaka Univ.) MR2011-36 |
Since the spin-orbit interaction in Si is essentially small due to the good crystalline symmetry, Si-based functional de... [more] |
MR2011-36 pp.21-25 |
ED |
2009-04-24 09:50 |
Miyagi |
Tohoku Univ. |
Graphene-on-silicon (GOS) technology for formation of high-mobility ultrathin channel layer on Si substrate Hiroyuki Handa, Yu Miyamoto, Eiji Saito, Hirokazu Fukidome, Takashi Ito (Tohoku Univ.), Maki Suemitsu (Tohoku Univ./JST) ED2009-10 |
With its industrial adaptability, epitaxial graphene, a graphene film formed by UHV annealing of SiC bulk substrates, is... [more] |
ED2009-10 pp.39-43 |
ED |
2009-04-24 13:00 |
Miyagi |
Tohoku Univ. |
Real-time monitoring of the growth of 3C-SiC films on Si substrate with pyrometric interferometry Eiji Saito, Maki Suemitsu (Tohoku Univ.) ED2009-14 |
“Temperature oscillation” is observed during growth of 3C-SiC on Si substrate using monomethyl-silane when the temperatu... [more] |
ED2009-14 pp.59-61 |
SDM |
2008-06-10 12:45 |
Tokyo |
An401・402, Inst. Indus. Sci., The Univ. of Tokyo |
XPS real-time monitoring on the development of Si suboxides during formation of thermal oxide on Si(110) surface Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Konno, Mitsutaka Matsumoto, Atsushi Kato, Eiji Saito, Maki Suemitsu (Tohoku Univ.), Yuden Teraoka, Akitaka Yoshigoe (JAEA) SDM2008-53 |
The growth process of thermal oxides on Si(110) surface and its interfacial bonding structures have been investigated by... [more] |
SDM2008-53 pp.65-70 |
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