IEICE Technical Committee Submission System
Conference Schedule
Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2017-11-09
11:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] SISPAD 2017 Review (1)
Akira Hiroki (Kyoto Inst. Tech.) SDM2017-62
 [more] SDM2017-62
pp.5-10
SDM 2017-11-10
14:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] An Accurate Metric to Control Time Step of Transient Device Simulation by Matrix Exponential Method
Shigetaka Kumashiro, Tatsuya Kamei, Akira Hiroki, Kazutoshi Kobayashi (KIT) SDM2017-70
An accurate metric for the time step control in the power device transient simulation is proposed. This metric contains ... [more] SDM2017-70
pp.47-52
SDM 2012-11-16
10:00
Tokyo Kikai-Shinko-Kaikan Bldg An Estimation of the Carrier Mobility Model Influenced by Inversion Charge Confinement for Sub-20nm MOSFETs
Masahiro Yamamoto, Akira Hiroki, Jong Chul Yoon (KIT) SDM2012-104
An effective mobility model used in the MASTAR program, which has been used to predict the device characteristics in the... [more] SDM2012-104
pp.25-30
SDM 2011-11-11
15:20
Tokyo Kikai-Shinko-Kaikan Bldg. Gate Voltage Dependence of Channel Length Modulation Coefficient for Nanoscale MOSFETs
Akira Hiroki, Jong Chul Yoon (Kyoto Institute of Tech.) SDM2011-128
In modeling the drain current for nanoscale MOSFETs, the channel length modulation coefficient $\lambda$, which characte... [more] SDM2011-128
pp.75-80
SDM 2011-11-11
15:45
Tokyo Kikai-Shinko-Kaikan Bldg. Higher-order Effects of Source and Drain Parasitic Resistances for Nanoscale MOSFETs
Jong Chul Yoon, Akira Hiroki (Kyoto Institute of Tech.) SDM2011-129
Higher-order effects of source and drain parasitic resistances have been investigated for nanoscale MOSFETs. We have der... [more] SDM2011-129
pp.81-85
 Results 1 - 5 of 5  /   
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan