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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2023-11-30 13:05 |
Shizuoka | AlGaInN/GaN highhigh-electron mobility transistors with a thin unintentionally doped GaN channel and an AlN back barrier formed using a single single-crystal AlN substrate Tomoyuki Kawaide, Yoshinobu Kometani, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech)  ED2023-14 CPM2023-56 LQE2023-54 |
A high-electron-mobility transistor (HEMT) structure with a strain-engineered quaternary AlGaInN barrier layer, a thin u... [more] | ED2023-14 CPM2023-56 LQE2023-54 pp.1-5 |
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| LQE, ED, CPM | 2023-11-30 13:30 |
Shizuoka | Fabrication of GaN HBTs using a quaternary AlGaInN emitter and a GaInN base Masaya Takimoto, Akira Mase, Kojima tomoki, Egawa Takashi, Miyoshi Makoto (Nagoya Inst.Tech.) ED2023-15 CPM2023-57 LQE2023-55 |
Heterojunction bipolar transistors (HBTs) using GaN-based semiconductors are considered to be promising next-generation ... [more] | ED2023-15 CPM2023-57 LQE2023-55 pp.6-10 |
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| LQE, ED, CPM | 2023-11-30 17:10 |
Shizuoka | Device characteristics of GaInN-based photovoltaic cells fabricated on Free-Standing GaN substrate for optical wireless power transmission system Takahiro Fujiawa, Nan Hu, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.) ED2023-23 CPM2023-65 LQE2023-63 |
GaInN-based photovoltaic (PV) devices are highly promising for application to optical wireless power transmission (OWPT)... [more] | ED2023-23 CPM2023-65 LQE2023-63 pp.44-47 |
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| CPM, ED, SDM | 2023-05-19 15:40 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
Fabrication and evaluation of transfer-free graphene FETs on sapphire substrates using agglomeration phenomenon of Ni patterns with ultra-fine structure Ichiro Kato, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) ED2023-5 CPM2023-5 SDM2023-22 |
Using graphene as a FET requires transferring it to an insulating substrate, and defects may be introduced in the graphe... [more] | ED2023-5 CPM2023-5 SDM2023-22 pp.20-23 |
| CPM, ED, LQE | 2022-11-24 14:55 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Fabrication and characterization of AlGaInN/GaN HEMTs on Single-Crystal AlN Substrate SakuraTanaka, Tomoyuki Kawaide, Akiyoshi Inoue, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.) ED2022-35 CPM2022-60 LQE2022-68 |
[more] | ED2022-35 CPM2022-60 LQE2022-68 pp.53-56 |
| CPM, ED, LQE | 2022-11-24 15:15 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Study on p-GaInN base layer and quaternary AlGaInN emitter layer for GaN HBTs Yusuke Iida, Akira Mase, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi (NITech) ED2022-36 CPM2022-61 LQE2022-69 |
GaN-based HBTs are very promising as next-generation high-frequency power devices. However, when considering the realiza... [more] | ED2022-36 CPM2022-61 LQE2022-69 pp.57-60 |
| CPM, ED, LQE | 2022-11-25 11:25 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Growth temperature dependence of semipolar {11-22} AlInN/GaInN Takahiro Fujisawa, Taiki Nakabayashi, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.), Tetsuya Takeuchi (Meijo Univ.), Narihito Okada, Kazuyuki Tadatomo (Yamaguchi Univ.) ED2022-42 CPM2022-67 LQE2022-75 |
AlInN alloys are promising materials for GaN-based electronic and optical devices. In this study, AlInN layers with a th... [more] | ED2022-42 CPM2022-67 LQE2022-75 pp.81-84 |
| ED, CPM, LQE | 2021-11-25 15:25 |
Online | Online | Optical characterization of c-plane Al0.83In0.17N/GaN lattice-matched heterostructures Liyang Li, Kohei Shima (Tohoku Univ.), Mizuki Yamanaka (Nagoya Inst. Tech.), Kazunobu Kojima (Tohoku Univ.), Takashi Egawa (Nagoya Inst. Tech.), Akira Uedono (Univ. of Tsukuba), Ishibashi Shoji (AIST), Tetsuya Takeuchi (Meijo Univ.), Makoto Miyoshi (Nagoya Inst. Tech.), Shigefusa Chichibu (Tohoku Univ.) ED2021-24 CPM2021-58 LQE2021-36 |
Room-temperature (RT) time-resolved photoluminescence (PL) and spatially resolved cathodoluminescence (CL) measurements ... [more] | ED2021-24 CPM2021-58 LQE2021-36 pp.45-50 |
| ED, CPM, LQE | 2021-11-25 16:55 |
Online | Online | Evaluation of PV performance of GaInN besed photovoltaic cells under monochromatic light illumination for optical wireless power transmission system Taiki Nakabayashi, Kousuke Yamamoto, Pradip Dalapati, Takashi Egawa, Makoto Miyoshi (NIT) ED2021-27 CPM2021-61 LQE2021-39 |
GaInN-based photovoltaic (PV) devices are highly promising for application to optical wireless power transmission (OWPT)... [more] | ED2021-27 CPM2021-61 LQE2021-39 pp.59-62 |
| ED, CPM, LQE | 2021-11-26 14:55 |
Online | Online | High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2021-32 CPM2021-66 LQE2021-44 |
In this study, we fabricated and characterized heterojunction field-effect transistors (HFETs) based on an Al0.36Ga0.64N... [more] | ED2021-32 CPM2021-66 LQE2021-44 pp.79-82 |
| ED, CPM, LQE | 2021-11-26 16:25 |
Online | Online | Fabrication of Recessed-gate AlGaInN/AlGaN HFETs utilizing a photo-electrochemical (PEC) etching. Kosaku Ito, Yuto Komatsu, Masachika Toguchi (Hokkaido Univ.), Akiyoshi Inoue, Sakura Tanaka, Makoto Miyoshi (Nagoya Inst. of Tech), Taketomo Sato (Hokkaido Univ.) ED2021-35 CPM2021-69 LQE2021-47 |
We utilized photo-electrochemical (PEC) etching for fabrication of recessed-gate AlGaInN/AlGaN MIS HFETs. The PEC reacti... [more] | ED2021-35 CPM2021-69 LQE2021-47 pp.91-94 |
| LQE, CPM, ED | 2020-11-26 11:15 |
Online | Online | Study on p/n conductivity control of epitaxial AlInN films Taiki Nakabayashi, Haruka Takada, Takashi Egawa, Makoto Miyoshi (NIT), Tetsuya Takeuchi (Meijo Univ.) ED2020-4 CPM2020-25 LQE2020-55 |
In this study, we attempted the p/n conductivity control of epitaxial AlInN films grown by metalorganic chemical vapor d... [more] | ED2020-4 CPM2020-25 LQE2020-55 pp.13-16 |
| LQE, CPM, ED | 2020-11-26 11:35 |
Online | Online | Examination of GaN-based photodetectors for optical wireless power transmission system Kosuke Yamamoto, Pradip Dalapati, Takashi Egawa, Makoto Miyoshi (NIT) ED2020-5 CPM2020-26 LQE2020-56 |
Aiming at a high-efficiency photodetectors for the optical wireless power transmission system consisting of semiconducto... [more] | ED2020-5 CPM2020-26 LQE2020-56 pp.17-20 |
| LQE, CPM, ED | 2020-11-26 13:30 |
Online | Online | High-breakdown-voltage AlGaN channel HFETs with selective-area regrowth ohmic contacts Akiyoshi Inoue, Hiroki Harada, Mizuki Yamanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2020-7 CPM2020-28 LQE2020-58 |
Al0.19Ga0.81N-channel metal-insulator-semiconductor (MIS) HFETs employing a quaternary AlGaInN barrier layer and a selec... [more] | ED2020-7 CPM2020-28 LQE2020-58 pp.25-28 |
| CPM, LQE, ED | 2019-11-21 14:55 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Epitaxial growth of thick AlInN films on GaN and GaInN by MOCVD Mizuki Yamanaka, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.), Narihito Okada, Kazuyuki Tadatomo (Yamaguchi Univ.), Tetsuya Takeuchi (Meijo Univ.) ED2019-44 CPM2019-63 LQE2019-87 |
[more] | ED2019-44 CPM2019-63 LQE2019-87 pp.49-52 |
| CPM, LQE, ED | 2019-11-21 15:30 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Growth, crystal and optical characterization of quaternary AlGaInN epitaxial films lattice-matched to c-plane GaN Hiroki Harada, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.), Tetsuya Takeuchi (Meijo Univ.) ED2019-45 CPM2019-64 LQE2019-88 |
Quaternary AlGaInN films with thickness greater than 150 nm are grown on c-plane GaN-on-sapphire templates by metalorgan... [more] | ED2019-45 CPM2019-64 LQE2019-88 pp.53-56 |
| ED, LQE, CPM | 2018-11-29 13:25 |
Aichi | Nagoya Inst. tech. | Growth of epitaxial AlInN films on c-plane GaN and the relationship between their alloy compositions and microstructures Mizuki Yamanaka, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech), Tetsuya Takeuchi (Meijo Univ.) ED2018-33 CPM2018-67 LQE2018-87 |
[more] | ED2018-33 CPM2018-67 LQE2018-87 pp.5-8 |
| ED, LQE, CPM | 2018-11-30 09:00 |
Aichi | Nagoya Inst. tech. | A 2.5-kV-breakdown-voltage AlGaN-channel HFET with a strain-controlled AlGaInN barrier layer Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. of Tech.) ED2018-41 CPM2018-75 LQE2018-95 |
Novel AlGaN-channel heterostructures employing quaternary AlGaInN barriers were grown by metalorganic chemical vapor dep... [more] | ED2018-41 CPM2018-75 LQE2018-95 pp.41-44 |
| ED, LQE, CPM | 2018-11-30 09:25 |
Aichi | Nagoya Inst. tech. | Effects of annealing ambient on electrical properties of ALD-Al2O3/AlGaN/GaN MIS-HEMTs Keita Furuoka, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) ED2018-42 CPM2018-76 LQE2018-96 |
We conducted post-deposition annealing (PDA) and post-metalization annealing in various annealing atmosphere and evaluat... [more] | ED2018-42 CPM2018-76 LQE2018-96 pp.45-48 |
| LQE, CPM, ED | 2017-12-01 09:40 |
Aichi | Nagoya Inst. tech. | A comparative study of InGaN/GaN MQW solar cells grown on sapphire and AlN/sapphire template by metalorganic chemical vapor deposition Takuma Mori, Miki Ohta, Hiroki Harada, Shinya Kato, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) ED2017-57 CPM2017-100 LQE2017-70 |
Two kinds of substrates, sapphire and AlN/sapphire tem-plate (AlN template), were used for the growth of InGaN/GaN multi... [more] | ED2017-57 CPM2017-100 LQE2017-70 pp.39-44 |
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