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All Technical Committee Conferences (Searched in: All Years)
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| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| ED, SDM |
2007-06-25
15:30 |
Overseas |
Commodore Hotel Gyeongju Chosun, Gyeongju, Korea |
Characterization of plasma etching effects on p-type GaN by capacitance measurements of Schottky diodes
Masashi Kato, Kazuki Mikamo, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs.) |
Gallium Nitride (GaN) is a promising semiconductor material for high-power devices. For realization of the high-power de... [more] |
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| SDM, ED, CPM |
2007-05-25
11:20 |
Shizuoka |
Shizuoka Univ. |
Characterization of plasma etching effects on GaN by electrical measurements of Schottky diodes
Masashi Kato, Kazuki Mikamo, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs. Inc.) |
Gallium Nitride (GaN) is a promising semiconductor material for high-power devices. For realization of the high-power de... [more] |
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