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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2023-11-10
14:00
Tokyo
(Primary: On-site, Secondary: Online)
Examination of high high-precision device modeling methods -- Comparison of Neural Networks and Linear Regression --
Kengo Nakata, Takayuki Mori, Jiro Ida (Kanazawa Inst. Tech.) SDM2023-71
Neural network (NN) models have the advantage of high inference speed, but they are difficult to modeling. For this reas... [more] SDM2023-71
pp.36-40
SDM, ICD, ITE-IST [detail] 2023-08-01
16:35
Hokkaido Hokkaido Univ. Multimedia Education Bldg. 3F
(Primary: On-site, Secondary: Online)
Analysis of back bias effects and history phenomena in cryo 200nm SOIMOSFETs
Ryusei Ri, Takayuki Mori (KIT), Hiroshi Oka, Takahiro Mori (AIST), Jiro Ida (KIT) SDM2023-42 ICD2023-21
In this paper, we report the results of our ongoing analysis of a peculiar phenomenon in 200 nm SOI MOSFETs, which occur... [more] SDM2023-42 ICD2023-21
pp.32-35
SDM 2022-11-11
11:30
Online Online Modeling of Super Steep Subthreshold Slope "PN Body Tied SOI-FET" by using Neural Network
Nakata Kengo, Mori Takayuki, Ida Jiro (Kanazawa Inst. of Tech.) SDM2022-73
In this study, we examined how PN-Body Tied (PNBT) Silicon On Insulator (SOI)-FETs, a novel device structure with steep ... [more] SDM2022-73
pp.44-48
ICD, SDM, ITE-IST [detail] 2022-08-08
13:30
Online   [Invited Talk] Research Status of Steep Slope "PN-Body Tied SOI-FET" for Ultra low Power LSI Applications
Jiro Ida, Takayuki Mori (Kanazawa IT) SDM2022-37 ICD2022-5
 [more] SDM2022-37 ICD2022-5
pp.13-16
ICD, SDM, ITE-IST [detail] 2022-08-08
14:15
Online   Evaluation of Steep Subthreshold Slope Device "Dual-gate type PN-body Tied SOI-FET" for Ultra-low Voltage Operation
Haruki Yonezaki, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC) SDM2022-38 ICD2022-6
In this study, we report the first prototype results of a Steep SS "Dual-Gate (DG) PN-Body Tied (PNBT) SOI-FET" for extr... [more] SDM2022-38 ICD2022-6
pp.17-20
ICD, SDM, ITE-IST [detail] 2020-08-07
11:00
Online Online CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET”
Shota Ishiguro, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC) SDM2020-8 ICD2020-8
In this study, we report the CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET” proposed in our l... [more] SDM2020-8 ICD2020-8
pp.37-40
SDM, ICD, ITE-IST [detail] 2019-08-09
14:10
Hokkaido Hokkaido Univ., Graduate School /Faculty of Information Science and Effect of Vsub and Positive Charge in Buried Oxide on Super Steep SS “PN Body-Tied SOI-FET”
Wataru Yabuki, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2019-51 ICD2019-16
In this study, We report the effect of the substrate bias (Vsub) and the positive charge (Qox) in the buried oxide (BOX)... [more] SDM2019-51 ICD2019-16
pp.89-93
SDM, ICD, ITE-IST [detail] 2019-08-09
14:35
Hokkaido Hokkaido Univ., Graduate School /Faculty of Information Science and Ultra Low power rectenna with super SS "PN-Body Tied SOI-FET"
Takuya Yamada, Jiro Ida, Takayuki Mori, Nobuhiko Yasumaru, Kenji Itoh (KIT), Koichiro Ishibashi (UEC) SDM2019-52 ICD2019-17
In this report,we have simulated the rectification efficiency of the rectenna using PNBT Diode that is a diode-connected... [more] SDM2019-52 ICD2019-17
pp.95-98
WPT, MW 2019-04-22
15:40
Tokyo Kikai-Shinko-Kaikan Bldg. High Sensitivity 2.4GHz Band Rectenna with Direct Matching Topology
Shunya Tsuchimoto, Kenji Itoh, Keisuke Noguchi, Jiro Ida (Kanazawa Institute of Tech) WPT2019-7 MW2019-7
 [more] WPT2019-7 MW2019-7
pp.33-37
WPT, MW 2019-04-22
16:05
Tokyo Kikai-Shinko-Kaikan Bldg. 1MHz band rectenna in nW opezation
Nobuhiko Yasumaru, Kanto Nakanishi, Kenji Itoh, Shunya Tsuchimoto, Takuya Yamada, Takayuki Mori, Jiro Ida (Knazawa Inst.Tech.) WPT2019-8 MW2019-8
In this paper, simulational and experimental investigations on the 1 MHz band rectenna in nW operation are described for... [more] WPT2019-8 MW2019-8
pp.39-43
SDM 2018-11-09
15:55
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Characteristics and Ultralow Voltage Rectification Experiment on MOS Diode connection using Super Steep SS PN-Body Tied SOI-FET
Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2018-76
In order to utilize the Radio Frequency (RF) signal power existing in the living environment, a RF rectifier that realiz... [more] SDM2018-76
pp.59-64
SDM, ICD, ITE-IST [detail] 2018-08-07
14:25
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 Experiment of Ultralow Voltage Rectification by Super Steep SS "PN-Body Tied SOI-FET"
Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2018-31 ICD2018-18
In order to construct a rectifier that function with µW power, it is necessary to develop a new diode technology. The co... [more] SDM2018-31 ICD2018-18
pp.31-34
MW
(2nd)
2018-06-27
- 2018-06-29
Overseas KMITL, Bangkok, Thailand High Efficiency Rectenna Design with High Impedance Antenna and SOI-MOSFET Connected Diode for RF Energy Harvesting
Yasunori Tsuchiya, Jiro Ida, Takayuki Mori, Takuya Yamada, Shun Momose, Keisuke Noguchi, Kenji Itoh (KIT)
The rectification efficiency of the rectenna were simulated with the high impedance (Hi-Z) antenna and the SOI MOSFET co... [more]
MW
(2nd)
2018-06-27
- 2018-06-29
Overseas KMITL, Bangkok, Thailand Rectification of Small Voltage Signal by Super Steep Subthreshold Slope "PN-Body Tied SOI FET" for RF Energy Harvesting
Takuya Yamada, Jiro Ida, Takayuki Mori, Shun Momose, Yasunori Tsuchiya, Kenji Itoh (KIT), Koichiro Ishibashi (UEC)
Rectification of the small voltage signal was experimentally confirmed, for the first time, by our new device of the sup... [more]
AP 2018-05-17
09:35
Kumamoto Kumamoto Univ. A Folded Dipole Antenna with Three conductors for Energy Harvesting Applications
Takuya Nishio, Keisuke Noguchi, Kenji Itoh, Jiro Ida (KIT) AP2018-13
We have studied a high impedance antenna in order to improve the rectification efficiency for energy harvesting applicat... [more] AP2018-13
pp.1-6
ICD, MW 2018-03-02
14:15
Shiga The University of Shiga Prefecture The wideband rectenna with inductive folded dipole antenna
Hiroki Kishimoto, Kenji Itoh, Keisuke Noguchi, Jiro Ida (KIT) MW2017-196 ICD2017-120
 [more] MW2017-196 ICD2017-120
pp.109-114
SDM, ICD, ITE-IST [detail] 2017-08-02
11:35
Hokkaido Hokkaido-Univ. Multimedia Education Bldg. Gate Controlled Diode Characteristics of Super Steep Subthreshold slope PN-Body Tied SOI-FET for high Efficiency RF Energy Harvesting
Shun Momose, Jiro Ida, Takayuki Mori, Takahiro Yoshida, Junpei Iwata, Takashi Horii, Takahiro Furuta, Takuya Yamada, Daichi Takamatsu, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2017-45 ICD2017-33
The gate controlled diode characteristics with our newly super steep subthreshold slope (SS) “PN-Bode Tied SOI FET” was ... [more] SDM2017-45 ICD2017-33
pp.109-114
MW 2016-12-16
16:20
Kanagawa National Defense Academy The estimation method of antenna impedance by using a RF rectifier
Seishu Yanagihara, Shunya Tsuchimoto, Kenji Itoh, Keisuke Noguchi, Jiro Ida (KIT) MW2016-170
For improving characteristics of rectennas used in the energy harvesting systems, it is effective to employ the rectenna... [more] MW2016-170
pp.215-219
ICD, SDM, ITE-IST [detail] 2016-08-03
14:40
Osaka Central Electric Club PN-Body Tied Super Steep SS FET with Body Bias below 1V and Drain Bias 0.1V
Takahiro Yoshida, Jiro Ida, Takashi Horii (KIT), Masao Okihara (Lapis), Yasuo Arai (KEK) SDM2016-66 ICD2016-34
We have found out that the super steep Subthreshold Slope (SS) of the PN-body tied SOI FET appeared with the body voltag... [more] SDM2016-66 ICD2016-34
pp.117-121
ICD, MW 2016-03-04
13:20
Hiroshima Hiroshima University The 500MHz band low power rectenna for DTV in Tokyo metropolitan area
Takahiro Furuta, Motoki Ito, Nao Nambo, Kenji Itoh, Keisuke Noguchi, Jiro Ida (KIT) MW2015-209 ICD2015-132
In this paper, the 500MHz band low power rectennas for DTV in Tokyo metropolitan area are described. The rectenna is con... [more] MW2015-209 ICD2015-132
pp.201-206
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