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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 13 of 13  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2019-11-21
13:20
Shizuoka Shizuoka Univ. (Hamamatsu) Characterization of plasma-induced damage of GaN trench sidewall formed by ICP-RIE
Shinji Yamada, Hideki Sakurai (Nagoya Univ./ULVAC), Yamato Osada, Toshiyuki Nakamura, Ryuichiro Kamimura (ULVAC), Jun Suda, Tetsu Kachi (Nagoya Univ.) ED2019-40 CPM2019-59 LQE2019-83
(To be available after the conference date) [more] ED2019-40 CPM2019-59 LQE2019-83
pp.33-35
SDM, ED, CPM 2017-05-26
10:20
Aichi VBL, Nagoya University Characterization of GaN epilayers grown on GaN substrates by a microwave photoconductivity decay method
Takato Asada (N.I.Tech), Yoshihito Ichikawa (NITech), Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita (Toyota Central R&D Labs.), Tetsu Kachi (Nagoya Univ.), Masashi Kato (NITech) ED2017-25 CPM2017-11 SDM2017-19
 [more] ED2017-25 CPM2017-11 SDM2017-19
pp.55-58
ED, LQE, CPM 2015-11-26
13:35
Osaka Osaka City University Media Center Electrical characterization of lightly Si-doped homoepitaxitial n-type GaN studied by Hall-effect measurement
Naoki Sawada (Kyoto Univ.), Tetsuo Narita, Tetsu Kachi, Tsutomu Uesugi (TOYOTA Central R&D Labs.), Masahiro Horita, Jun Suda (Kyoto Univ.) ED2015-73 CPM2015-108 LQE2015-105
 [more] ED2015-73 CPM2015-108 LQE2015-105
pp.27-32
ED, SDM, CPM 2012-05-18
09:50
Aichi VBL, Toyohashi Univ. of Technol. Evaluation of GaN substrates for vertical GaN power device applications
Tetsu Kachi, Tsutomu Uesugi (Toyota RDL) ED2012-28 CPM2012-12 SDM2012-30
 [more] ED2012-28 CPM2012-12 SDM2012-30
pp.53-56
CPM, LQE, ED 2010-11-12
10:25
Osaka   Study of etching-induced damage in p-type GaN by hard X-ray photoelectron spectroscopy
Daigo Kikuta, Tetsuo Narita, Naoko Takahashi, Keita Kataoka, Yasuji Kimoto, Tsutomu Uesugi, Tetsu Kachi (Toyota CRDL, Inc.), Masahiro Sugimoto (Toyota Motor Corp.) ED2010-155 CPM2010-121 LQE2010-111
We carried out nondestructive measurements of the depth profile of etching-induced damage in p-GaN, in particular surfac... [more] ED2010-155 CPM2010-121 LQE2010-111
pp.59-62
ED, SDM 2010-07-02
11:05
Tokyo Tokyo Inst. of Tech. Ookayama Campus Characteristics of GaN p-n diode with damage layer induced by ICP plasma process
Tsutomu Uesugi, Tetsu Kachi (Toyota Central R&D Labs.), Tamotsu Hashizume (Hokkaido Univ.) ED2010-108 SDM2010-109
 [more] ED2010-108 SDM2010-109
pp.253-256
ED 2008-10-23
14:15
Fukuoka Kyushu Institute of Technology Recent Advances on GaN Vertical Power Devices
Tetsu Kachi (Toyota R&D Labs.) ED2008-147
 [more] ED2008-147
pp.133-138
SDM, ED 2008-07-11
09:25
Hokkaido Kaderu2・7 [Invited Talk] Recent Advances on GaN Vertical Power Device
Tetsu Kachi (Toyota Central R&D Labs., Inc.) ED2008-72 SDM2008-91
Two types of the vertical device structure have been developed for GaN power devices. One is similar to DMOSFET, which ... [more] ED2008-72 SDM2008-91
pp.171-175
CPM, ED, LQE 2007-10-12
13:50
Fukui Fukui Univ. Electrical characterization of homoepitaxially-grown pn GaN diodes
Yutaka Tokuda, Youichi Matsuoka, Takeshi Seo (Aichi Inst. Tech.), Hiroyuki Ueda, Osamu Ishiguro, Narumasa Soejima, Tetsu Kachi (Toyota Central R&D Labs. Inc.) ED2007-173 CPM2007-99 LQE2007-74
We report the electrical characterization of homoepitaxially-grown pn GaN by MOCVD on free-standing GaN substrates. The... [more] ED2007-173 CPM2007-99 LQE2007-74
pp.85-88
ED, SDM 2007-06-25
15:30
Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea Characterization of plasma etching effects on p-type GaN by capacitance measurements of Schottky diodes
Masashi Kato, Kazuki Mikamo, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs.)
Gallium Nitride (GaN) is a promising semiconductor material for high-power devices. For realization of the high-power de... [more]
ED, SDM 2007-06-25
15:55
Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea Analysis of plasma etching damages in GaN by excess carrier lifetime measurements
Masashi Kato, Keisuke Fukushima, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs.)
Gallium nitride (GaN) is a promising material for high power and high frequency devices, and the etching processes are n... [more]
SDM, ED, CPM 2007-05-24
14:50
Shizuoka Shizuoka Univ. Analysis of plasma etching damages and characterization of annealing effects on GaN by excess carrier lifetime measurements
Keisuke Fukushima, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs., Inc.)
Gallium nitride (GaN) is promising for high power and high frequency devices, and the etching processes is necessary in ... [more]
SDM, ED, CPM 2007-05-25
11:20
Shizuoka Shizuoka Univ. Characterization of plasma etching effects on GaN by electrical measurements of Schottky diodes
Masashi Kato, Kazuki Mikamo, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs. Inc.)
Gallium Nitride (GaN) is a promising semiconductor material for high-power devices. For realization of the high-power de... [more]
 Results 1 - 13 of 13  /   
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