Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, ED, CPM |
2017-05-26 09:55 |
Aichi |
VBL, Nagoya University |
Suppression of surface recombination at the 4H-SiC (0001) Si-face by immersing aqueous solutions Masashi Kato, Yoshihito Ichikawa, Masaya Ichimura (NITech), Tsunenobu Kimoto (Kyoto Univ.) ED2017-24 CPM2017-10 SDM2017-18 |
Although surface recombination is one of the factors that affects the performance of bipolar SiC devices and SiC photoca... [more] |
ED2017-24 CPM2017-10 SDM2017-18 pp.51-54 |
SDM, ED, CPM |
2017-05-26 10:20 |
Aichi |
VBL, Nagoya University |
Characterization of GaN epilayers grown on GaN substrates by a microwave photoconductivity decay method Takato Asada (N.I.Tech), Yoshihito Ichikawa (NITech), Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita (Toyota Central R&D Labs.), Tetsu Kachi (Nagoya Univ.), Masashi Kato (NITech) ED2017-25 CPM2017-11 SDM2017-19 |
[more] |
ED2017-25 CPM2017-11 SDM2017-19 pp.55-58 |
ED, CPM, SDM |
2015-05-29 09:55 |
Aichi |
Venture Business Laboratory, Toyohashi University of Technology |
Quantitative evaluation of temperature dependence of surface recombination velocities for 4H-SiC Kimihiro Kohama, Yuto Mori, Masashi Kato, Masaya Ichimura (NIT) ED2015-30 CPM2015-15 SDM2015-32 |
The surface recombination velocity is one of the limiting factors for the carrier lifetime, which is an important parame... [more] |
ED2015-30 CPM2015-15 SDM2015-32 pp.71-76 |
CPM, ED, SDM |
2014-05-29 13:20 |
Aichi |
|
Deep levels near the valence band in p-type 4H-SiC epilayers with various Al concentrations Hiroki Nakane, Masashi Kato, Masaya Ichimura (NIT) ED2014-38 CPM2014-21 SDM2014-36 |
Understanding of the deep level is essential to control the carrier lifetime for ultrahigh-voltage SiC bipolar devices. ... [more] |
ED2014-38 CPM2014-21 SDM2014-36 pp.101-104 |
CPM, ED, SDM |
2014-05-29 13:40 |
Aichi |
|
Microwave reflectance from SiC in the high injection condition
-- Toward accurate evaluation of the carrier lifetime -- Masashi Kato, Yuto Mori, Masaya Ichimura (NITech) ED2014-39 CPM2014-22 SDM2014-37 |
[more] |
ED2014-39 CPM2014-22 SDM2014-37 pp.105-108 |
SDM, ED, CPM |
2013-05-16 13:30 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. |
Evaluation of carrier lifetime for 4H-SiC surfaces treated by various processes Yuto Mori, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2013-16 CPM2013-1 SDM2013-23 |
For very high voltage SiC bipolar devices, the carrier lifetime is an important parameter which influences the device pe... [more] |
ED2013-16 CPM2013-1 SDM2013-23 pp.1-6 |
SDM, ED, CPM |
2013-05-16 13:55 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. |
Identification of defect structures forming the deep levels in 4H-SiC Hiroki Nakane, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Takeshi Ohshima (JAEA) ED2013-17 CPM2013-2 SDM2013-24 |
(To be available after the conference date) [more] |
ED2013-17 CPM2013-2 SDM2013-24 pp.7-12 |
SDM, ED, CPM |
2013-05-17 14:55 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. |
Evaluation of the carrier lifetime of SiC for high-efficiency hydrogen generation Keiko Miyake, Tomonari Yasuda, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2013-33 CPM2013-18 SDM2013-40 |
The hydrogen generation by the electrolysis of water with using sunlight attracts an attention for as a next energy tech... [more] |
ED2013-33 CPM2013-18 SDM2013-40 pp.93-98 |
SDM, ED |
2013-02-27 15:00 |
Hokkaido |
Hokkaido Univ. |
possibility of efficiency improvement of silicon solar cells due to defect-level introduction by ion implantation Hiromu Sakakibara, Koji Wada, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2012-131 SDM2012-160 |
[more] |
ED2012-131 SDM2012-160 pp.19-24 |
EA, SP, SIP |
2012-05-24 14:10 |
Osaka |
Osaka Univ. Nakanoshima Center |
Performance improvement of the analog ANC circuit for a duct by addition of an all-pass filter Tatsuki Hyodo, Gaku Asakura, Kiwamu Tsukada, Masashi Kato (NIT) EA2012-12 SIP2012-12 SP2012-12 |
Active noise control (ANC) has been known as a way to decrease low frequency noise in a duct. So far, we have developed ... [more] |
EA2012-12 SIP2012-12 SP2012-12 pp.65-69 |
ED, SDM, CPM |
2012-05-18 11:15 |
Aichi |
VBL, Toyohashi Univ. of Technol. |
Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation Kazuki Yoshihara, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2012-31 CPM2012-15 SDM2012-33 |
Silicon carbide (SiC) is a promising material for high power devices with low energy loss. However we have never complet... [more] |
ED2012-31 CPM2012-15 SDM2012-33 pp.67-72 |
CPM, SDM, ED |
2011-05-19 10:25 |
Aichi |
Nagoya Univ. (VBL) |
Thickness and surface dependence of the carrier lifetime in free-standing n-type 4H-SiC epilayers Masashi Kato, Atsushi Yoshida, Masaya Ichimura (Nagoya Inst. of Tech.) ED2011-4 CPM2011-11 SDM2011-17 |
To fabricate very high voltage SiC devices, control of the carrier lifetime is extremely important. However, there have ... [more] |
ED2011-4 CPM2011-11 SDM2011-17 pp.15-20 |
CPM, SDM, ED |
2011-05-19 10:50 |
Aichi |
Nagoya Univ. (VBL) |
Correlation between strain fields and excess carrier lifetime maps in 3C-SiC wafer Atsushi Yoshida, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2011-5 CPM2011-12 SDM2011-18 |
3C-SiC is a promising material for low loss and high voltage power devices. However realization of 3C-SiC devices is dif... [more] |
ED2011-5 CPM2011-12 SDM2011-18 pp.21-26 |
CPM, SDM, ED |
2011-05-19 11:15 |
Aichi |
Nagoya Univ. (VBL) |
Characterization of SiC photoelectrochemical properties for water splitting Tomonari Yasuda, Masashi Kato, Masaya Ichimura (NIT) ED2011-6 CPM2011-13 SDM2011-19 |
SiC is chemically stable material, and strong against corrosion with electrobath. In addition, because a part of polytyp... [more] |
ED2011-6 CPM2011-13 SDM2011-19 pp.27-31 |
CPM, SDM, ED |
2011-05-19 11:40 |
Aichi |
Nagoya Univ. (VBL) |
Improvement of n-type 4H-SiC Schottky diode characteristics using passivation of defect by anodic oxidation. Masaya Kimura, Masashi Kato, Masaya Ichimura (NIT) ED2011-7 CPM2011-14 SDM2011-20 |
[more] |
ED2011-7 CPM2011-14 SDM2011-20 pp.33-38 |
EA, SIP, SP |
2009-05-28 16:00 |
Hyogo |
|
Active noise control in a duct by an analog neural network circuit Masashi Kato, Koji Onoda, Toshihiro Tanaka (Nagoya Inst. of Tech.) EA2009-6 SIP2009-6 SP2009-11 |
Although active noise control (ANC) in acoustic field of ducts has been applied with digital signal processing, the ANC ... [more] |
EA2009-6 SIP2009-6 SP2009-11 pp.29-33 |
SDM, ED |
2008-07-11 15:35 |
Hokkaido |
Kaderu2・7 |
Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition Masashi Kato, Hidenori Ono, Kazuya Ogawa, Masaya Ichimura (Nagoya Inst. of Tech.) ED2008-108 SDM2008-127 |
4H-SiC Schottky diodes are promising devices for the application of high-power and high-frequency rectifiers.However it ... [more] |
ED2008-108 SDM2008-127 pp.357-361 |
CPM, ED, SDM |
2008-05-16 14:40 |
Aichi |
Nagoya Institute of Technology |
Observation Method of Variation in Barrier Height in 4H-SiC Schottky Diodes Using the Electrochemical Deposition Hidenori Ono, Kazuya Ogawa, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2008-19 CPM2008-27 SDM2008-39 |
4H-SiC Schottky Diodes are promising for application of high-power and high-frequency rectifiers.However it is reported... [more] |
ED2008-19 CPM2008-27 SDM2008-39 pp.89-94 |
CPM, ED, SDM |
2008-05-16 15:05 |
Aichi |
Nagoya Institute of Technology |
Characterization of epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method Yoshinori Matsushita, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2008-20 CPM2008-28 SDM2008-40 |
Silicon Carbide (SiC) is a promising material for high power and high frequency devices. However we cannot transfer thes... [more] |
ED2008-20 CPM2008-28 SDM2008-40 pp.95-100 |
CPM, ED, SDM |
2008-05-16 15:30 |
Aichi |
Nagoya Institute of Technology |
Characterization of deep levels in undoped 6H-SiC by Current Deep-Level Transient Spectroscopy method Kosuke Kito, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech) ED2008-21 CPM2008-29 SDM2008-41 |
We characterized deep levels that influence a semi-insulating property by current-voltage, capacitance-voltage and curre... [more] |
ED2008-21 CPM2008-29 SDM2008-41 pp.101-106 |