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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, LQE, CPM |
2018-11-29 14:15 |
Aichi |
Nagoya Inst. tech. |
Improvement of channel mobility in GaN-MOS structure by surface treatment of recessed-GaN and dielectric SiO2 annealing Yosuke Kajiwara, Aya Shindome, Toshiki Hikosaka, Masahiko Kuraguchi (Toshiba Corp.), Akira Yoshioka (Toshiba Electronic Device & Storage Corp.), Shinya Nunoue (Toshiba Corp.) ED2018-35 CPM2018-69 LQE2018-89 |
In the previous work, we studied on the channel mobility in the Normally-off recessed GaN-based metal-oxide-semiconducto... [more] |
ED2018-35 CPM2018-69 LQE2018-89 pp.13-16 |
LQE, CPM, ED |
2017-12-01 12:55 |
Aichi |
Nagoya Inst. tech. |
Improvement of PBTI reliability in GaN-MOSFETs Yosuke Kajiwara, Toshiya Yonehara, Daimotsu Kato, Kenjiro Uesugi, Aya Shindome, Masahiko Kuraguchi, Akira Mukai, Hiroshi Ono, Miki Yumoto, Akira Yoshioka, Shinya Nunoue (Toshiba) ED2017-62 CPM2017-105 LQE2017-75 |
[more] |
ED2017-62 CPM2017-105 LQE2017-75 pp.65-68 |
CPM, LQE, ED |
2016-12-12 15:20 |
Kyoto |
Kyoto University |
Evaluating Current Collapse of GaN HEMT devices by Carrier Number Kohei Oasa, Akira Yoshioka, Yasunobu Saito, Takuo Kikuchi, Tatsuya Ohguro, Takeshi Hamamoto, Toru Sugiyama (TOSHIBA) ED2016-62 CPM2016-95 LQE2016-78 |
We report a new method to evaluate current collapse. To exclude self-heating effect during dynamic test, we propose carr... [more] |
ED2016-62 CPM2016-95 LQE2016-78 pp.27-30 |
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