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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW | 2024-03-01 09:25 |
Okayama | Okayama Prefectural University (Primary: On-site, Secondary: Online) |
A 100GHz-band GaN Transmitter Module with Triple-Multiplier for Beyond 5G Using Terahertz Band Yoshifumi Kawamura, Shimpei Yamashita, Keigo Nakatani, Koji Yamanaka, Yoshitaka Kamo, Kenichi Horiguchi, Tetsuo Kunii, Hirotaka Amasuga (Mitsubishi Electric)  MW2023-187 |
The goal of Beyond 5G (B5G) is to achieve ultra-high-speed, large-capacity communications 10 times faster than 5G. In or... [more] | MW2023-187 pp.66-69 |
| ED, MW | 2024-01-25 16:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
A GaN Power Amplifier Module for 5G Massive MIMO Base-station Applications Satoru Honda, Akio Matsushita, Eri Teranishi, katsuya Kato, Shuichi Sakata, kazuya Yamamoto, Tetsuo Kunii (Mitsubishi Electric) ED2023-70 MW2023-162 |
This report describes a 16W-class GaN power amplifier module prototyped for 5G Massive-MIMO base-station applications. T... [more] | ED2023-70 MW2023-162 pp.19-22 |
| AP, MW (Joint) |
2016-09-16 09:20 |
Ibaraki | AIST | 60% PAE, 30W X-band and 33% PAE, 100W Ku-Band PAs utilizing 0.15um GaN HEMT Technology Takuma Torii, Shohei Imai, Hiroaki Maehara, Tetsuo Kunii, Takuo Morimoto, Norihiro Yunoue, Miyo Miyashita, Miyazaki Yasunori, Tsuyama Yoshinori, Koji Yamanaka, Hiroshi Fukumoto (Mitsubishi Electric Corp.) MW2016-83 |
[more] | MW2016-83 pp.53-57 |
| ED | 2007-06-15 13:25 |
Toyama | Toyama Univ. | A High Power and High Breakdown Voltage Millimeter-Wave GaAs pHEMT with Low Nonlinear Drain Resistance Hirotaka Amasuga, Akira Inoue, Seiki Goto, Tetsuo Kunii, Yoshitsugu Yamamoto, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric) ED2007-32 |
A new GaAs pHEMT structure, which has achieved both high power density and high breakdown voltage for millimeter-wave am... [more] | ED2007-32 pp.7-11 |
| MW, ED | 2007-01-19 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A 3.5 GHz low distortion high powr FET using GaAs on-chip harmonic tuning circuit Seiki Goto, Tetsuo Kunii, Akira Inoue (Mitsubishi Electric Corp.), Toshikazu Oue (WTI), Masaki Kohno, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric Corp.) |
An ultra low distortion class-F power amplifier for 3.5GHz base stations of broadband access systems is presented. The f... [more] | ED2006-228 MW2006-181 pp.155-160 |
| MW, ED | 2007-01-19 11:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Nonlinear Drain Resistance Model for a High Power Millimeter-wave PHEMT Akira Inoue, Hirotaka Amasuga, Seiki Goto, Tetsuo Kunii, Tomoki Oku, Takahide Ishikawa (Mitsubishi) |
A millimeter wave high power PHEMT modelwith a nonlinear drain resistance Rd is proposed. The non-linear Rd arises from ... [more] | ED2006-229 MW2006-182 pp.161-166 |
| MW | 2006-12-22 11:35 |
Ehime | Series-shunt and shunt terminated-type GaN FET Switch Masatake Hangai, Tamotsu Nishino, Tetsuo Kunii, Moriyasu Miyazaki (Mitsubishi Electric Corp.) |
[more] | ||
| MW, ED | 2005-11-17 14:00 |
Saga | A High Humidity Resistance and High Power Density TaN/Au T-gate pHEMT for Ka-band Applications Hirotaka Amasuga, Seiki Goto, Toshihiko Shiga, Masahiro Totsuka, Hajime Sasaki, Tetsuo Kunii, Yoshitsugu Yamamoto, Akira Inoue, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric Corp.) |
A 0.8 W/mm high power pHEMT with high resistance to humidity is reported. By using tantalum nitride as the refractory ga... [more] | ED2005-166 MW2005-121 pp.45-49 |
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| MW, ED | 2005-01-18 11:10 |
Tokyo | - Tetsuo Kunii, Masahiro Totsuka, Yoshitaka Kamo, Yoshitsugu Yamamoto, -, -, Toshihiko Shiga, -, -, -, -, Akira Inoue, Tomoki Oku, Takuma Nanjo, Toshiyuki Oishi (Mitsubishi Electric) |
[more] | ED2004-216 MW2004-223 pp.25-30 |
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