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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 14 of 14  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2024-01-26
15:30
Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)
[Invited Talk] Ultra-high-speed analog front-end ICs for optical and wireless communications using InP compound semiconductors
Teruo Jyo, Munehiko Nagatani, Hiroshi Hamada, Hitoshi Wakita, Ibrahim Abdo, Daisuke Kitayama, Adam Pander, Yuta Shiratori, Miwa Mutoh, Takuya Tsutsumi, Hiroyuki Takahashi (NTT) ED2023-81 MW2023-173
To accommodate the demand for higher speed and larger capacity networks due to the continuous increase in communication ... [more] ED2023-81 MW2023-173
pp.81-86
ED, MWPTHz 2023-12-22
14:20
Miyagi RIEC, Tohoku Univ.
(Primary: On-site, Secondary: Online)
MOCVD growth and device characteristics of N-polar GaN HEMT with high-resistivity C-doped GaN buffer
Yuki Yoshiya, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2023-63 MWPTHz2023-73
MOCVD-grown N-polar GaN HEMTs with high-resistivity carbon-doped GaN buffer were fabricated. Carbon auto doping in buffe... [more] ED2023-63 MWPTHz2023-73
pp.46-51
MW 2023-03-02
16:25
Tottori Tottori Univ.
(Primary: On-site, Secondary: Online)
[Special Talk] 220-325 GHz High Gain and High Common-mode rejection Differential Amplifier in 60-nm InP-HEMT technology
Hiroshi Hamada, Takuya Tsutsumi, Adam Pander, Hideaki Matsuzaki, Hiroki Sugiyama, Hiroyuki Takahashi, Hideyuki Nosaka (NTT) MW2022-169
 [more] MW2022-169
pp.70-75
ED, MWPTHz 2022-12-19
16:05
Miyagi   [Invited Talk] InP-HEMT Fabrication Process Technology for Beyond 5G Wireless Network with Tera-Hertz Band
Takuya Tsutsumi, Hiroshi Hamada, Teruo Jyo, Hiroki Sugiyama, Taro Sasaki, Hiroyuki Takahashi, Fumito Nakajima (NTT) ED2022-76 MWPTHz2022-47
Next-generation "Beyond 5G (B5G) / 6G" wireless network systems have been researched and developed for meeting with rapi... [more] ED2022-76 MWPTHz2022-47
pp.23-27
ED, MWPTHz 2022-12-19
16:45
Miyagi   Evaluation of InP-HEMTs with In0.8Ga0.2As/InAs composite channel for terahertz applications
Taro Sasaki, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2022-77 MWPTHz2022-48
Terahertz ICs have been attracting much attention due to its potential use of next generation wireless communications, s... [more] ED2022-77 MWPTHz2022-48
pp.28-33
ED, THz 2021-12-21
09:00
Miyagi
(Primary: On-site, Secondary: Online)
[Invited Talk] InP HEMT based Tera-hertz IC Fabrication Technology for Beyond 5G/6G Application
Takuya Tsutsumi, Hirosh Hamada, Hiroki Sugiyama, Teruo Jyo, Hiroyuki Takahashi, Hideaki Matsuzaki (NTT) ED2021-55
In this report, we focuses fabrication processes of InP-based hight-mobility transistors (InP-HEMTs) and Tera-Hertz mono... [more] ED2021-55
pp.34-39
MWP 2020-05-28
13:30
Online Online [Invited Talk] Fabrication Process of InP-HEMT-based Sub-millimeter Wave ICs for Beyond 5G Application
Takuya Tsutsumi, Hiroki Sugiyama, Hiroshi Hamada, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) MWP2020-1
The 300-GHz sub-millimeter-wave band is one of the candidate frequency for “Beyond 5G” networks to meet rapidly increasi... [more] MWP2020-1
pp.1-6
ED, THz [detail] 2019-12-23
16:20
Miyagi   InP Wafer-level Backside Process for Future Tera-hertz Operation
Takuya Tsutsumi, Hiroshi Hamada, Hiroki Sugiyama, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) ED2019-82
The sub-millimeter-wave band would be utilized in future mobile networks to cope with increasing data rates. InP-based S... [more] ED2019-82
pp.23-28
MW, ED 2019-01-18
13:00
Tokyo Hitachi, Central Research Lab. [Invited Lecture] Ultra-high-speed IC technologies for optical and wireless communications
Hideyuki Nosaka, Munehiko Nagatani, Hiroshi Hamada, Teruo Jyo, Hitoshi Wakita, Takuya Tsutsumi, Hiroki Sugiyama, Miwa Mutoh, Minoru Ida, Hideaki Matsuzaki (NTT) ED2018-84 MW2018-151
 [more] ED2018-84 MW2018-151
pp.79-84
AP, MW
(Joint)
2018-09-20
14:55
Tokyo Tokyo Tech 300 GHz, 100 Gb/s wireless transceiver based on InP-HEMT technology
Hiroshi Hamada (NTT), Takuya Fujimura, Ibrahim Abdo, Kenichi Okada (Tokyo Tech), Takuya Tsutsumi, Ho-jin Song, Hiroki Sugiyama, Hideaki Matsuzaki, Hideyuki Nosaka (NTT) MW2018-60
These days, wireless systems which can support the data rate of 100 Gb/s are being researched for the next generation of... [more] MW2018-60
pp.7-12
CS, CAS 2018-03-12
14:00
Fukuoka Nishijin Plaza, Kyushu University Locating Recovery Nodes in Wired and Wireless Network Cooperation for Disaster Response
Yu Nakayama (Univ. Tokyo), Kazuki Maruta (Chiba Univ.), Takuya Tsutsumi (neko 9 Lab.), Kaoru Sezaki (Univ. Tokyo) CAS2017-141 CS2017-95
Optical fiber networks in disaster areas are often damaged and consequently telecommunication services are disrupted. To... [more] CAS2017-141 CS2017-95
pp.47-52
NS, ASN, RCC, RCS, SR
(Joint)
2017-07-20
11:05
Hokkaido Hokkaido Univ. [Poster Presentation] MAC Level Throughput Performance on Wired and Wireless Network Cooperation Recovery System
Kazuki Maruta (Chiba Univ.), Yu Nakayama (The Univ. of Tokyo), Takuya Tsutsumi (Kyoto Univ.) RCC2017-26 NS2017-47 RCS2017-118 SR2017-41 ASN2017-35
We present practical MAC level throughput performance of wired and wireless network cooperation (NeCo) system, which rea... [more] RCC2017-26 NS2017-47 RCS2017-118 SR2017-41 ASN2017-35
pp.91-92(RCC), pp.105-106(NS), pp.145-146(RCS), pp.103-104(SR), pp.123-124(ASN)
CS 2014-07-04
13:45
Kagoshima Minamitanecho Shoukoukai Kaigishitsu 256-Split 10G-EPON System with Inline Semiconductor Optical Amplifier
Takuya Tsutsumi, Takeshi Sakamoto, Yoshihito Sakai, Toshihito Fujiwara, Hiroshi Ou, Yasutaka Kimura, Hideki Mori (NTT), Yoshiaki Kojima, Hiroshi Sato (NTT-AT), Ken-Ichi Suzuki (NTT) CS2014-39
GE-PON, which is widely used in commercial access networks, is cost-effective it uses an optical splitter to connect up ... [more] CS2014-39
pp.131-136
MW, ED 2011-01-14
13:50
Tokyo Kikai-Shinko-Kaikan Bldg. New Stacked Metal-Insulator-Metal Capacitor for future InP-based ICs Applications
Takuya Tsutsumi, Suehiro Sugitani, Kazumi Nishimura, Minoru Ida (NTT) ED2010-189 MW2010-149
Increasing the capacitance density would be a very effective way of making InP IC chips smaller because capacitors occup... [more] ED2010-189 MW2010-149
pp.75-80
 Results 1 - 14 of 14  /   
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