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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW | 2024-03-01 09:25 |
Okayama | Okayama Prefectural University (Primary: On-site, Secondary: Online) |
A 100GHz-band GaN Transmitter Module with Triple-Multiplier for Beyond 5G Using Terahertz Band Yoshifumi Kawamura, Shimpei Yamashita, Keigo Nakatani, Koji Yamanaka, Yoshitaka Kamo, Kenichi Horiguchi, Tetsuo Kunii, Hirotaka Amasuga (Mitsubishi Electric)  MW2023-187 |
The goal of Beyond 5G (B5G) is to achieve ultra-high-speed, large-capacity communications 10 times faster than 5G. In or... [more] | MW2023-187 pp.66-69 |
| MW, ED | 2011-01-14 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A low 1/f Noise and High Reliability InP/GaAsSb DHBT for 76 GHz Automotive Radars Ko Kanaya, Hirotaka Amasuga, Shinsuke Watanabe, Yoshitsugu Yamamoto, Naoki Kosaka, Shinichi Miyakuni, Seiki Goto, Akihiro Shima (Mitsubishi Electric) ED2010-190 MW2010-150 |
This paper presents a low 1/f noise and high reliability InP/GaAsSb DHBT developed for automotive radars. To improve 1/... [more] | ED2010-190 MW2010-150 pp.81-86 |
| ED | 2009-11-29 14:50 |
Osaka | Osaka Science & Technology Center | A Low Phase Noise 77 GHz MMIC VCO With Optimized Fundamental and Harmonic Terminated Impedances Shinsuke Watanabe, Takayuki Matsuzuka, Hirotaka Amasuga, Yoshihiro Tsukahara, Seiki Goto, Takahide Ishikawa (Mitsubishi Electric Corp.) ED2009-162 |
This paper describes a 77 GHz MMIC VCO with optimized fundamental and harmonic terminated impedances. To achieve a low ... [more] |
ED2009-162 pp.13-18 |
| ED | 2008-12-19 15:30 |
Miyagi | Tohoku Univ. | 60GHz High Isolation SPDT MMIC Switches. Yoshihiro Tsukahara, Hirotaka Amasuga, Seiki Goto, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric Corp.) ED2008-188 |
This paper describes the successful development of a 60GHz high isolation SPDT MMIC switch for wireless applications. In... [more] | ED2008-188 pp.21-25 |
| MW | 2008-08-29 14:00 |
Osaka | Osaka-Univ. (Toyonaka) | A W-Band Second Harmonic Oscillator with Optimized Harmonic Load Takayuki Matsuzuka, Shinsuke Watanabe, Hirotaka Amasuga, Seiki Goto, Tomoki Oku, Takahide Ishikawa, Masatoshi Nakayama, Naohito Yoshida (Mitsubishi Electric Corp.) MW2008-98 |
A W-band second harmonic InGaP HBT oscillator with optimized second harmonic loads is presented. To enhance output power... [more] | MW2008-98 pp.107-112 |
| ED | 2007-11-27 16:05 |
Miyagi | Tohoku Univ. Research Institute of Electrical Communication | A Ka-Band Second Harmonic Oscillator with Optimized Harmonic Load Shinsuke Watanabe, Takayuki Matsuzuka, Hirotaka Amasuga, Akira Inoue, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric Corp.) ED2007-192 |
A Ka-Band second harmonic oscillator with the optimized harmonic load is presented. To enhance the output power withou... [more] |
ED2007-192 pp.29-32 |
| ED | 2007-06-15 13:25 |
Toyama | Toyama Univ. | A High Power and High Breakdown Voltage Millimeter-Wave GaAs pHEMT with Low Nonlinear Drain Resistance Hirotaka Amasuga, Akira Inoue, Seiki Goto, Tetsuo Kunii, Yoshitsugu Yamamoto, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric) ED2007-32 |
A new GaAs pHEMT structure, which has achieved both high power density and high breakdown voltage for millimeter-wave am... [more] | ED2007-32 pp.7-11 |
| MW, ED | 2007-01-19 11:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Nonlinear Drain Resistance Model for a High Power Millimeter-wave PHEMT Akira Inoue, Hirotaka Amasuga, Seiki Goto, Tetsuo Kunii, Tomoki Oku, Takahide Ishikawa (Mitsubishi) |
A millimeter wave high power PHEMT modelwith a nonlinear drain resistance Rd is proposed. The non-linear Rd arises from ... [more] | ED2006-229 MW2006-182 pp.161-166 |
| MW, ED | 2005-11-17 14:00 |
Saga | A High Humidity Resistance and High Power Density TaN/Au T-gate pHEMT for Ka-band Applications Hirotaka Amasuga, Seiki Goto, Toshihiko Shiga, Masahiro Totsuka, Hajime Sasaki, Tetsuo Kunii, Yoshitsugu Yamamoto, Akira Inoue, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric Corp.) |
A 0.8 W/mm high power pHEMT with high resistance to humidity is reported. By using tantalum nitride as the refractory ga... [more] | ED2005-166 MW2005-121 pp.45-49 |
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