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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 7 of 7  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2018-11-09
13:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Review of Recent Sensor Devices Research based on Semiconductor Technologies -- With Review of SISPAD 2017 Workshop2: "Technologies for Sensor Devices" --
Shigeyasu Uno (Ritsumeikan Univ.) SDM2018-73
An overview of recent sensor device research activities based on the semiconductor technologies will be given with a rev... [more] SDM2018-73
pp.43-46
SDM 2014-11-07
11:15
Tokyo Kikai-Shinko-Kaikan Bldg. Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Extracted Using Monte Carlo Method
Hideaki Tsuchiya, Ryoma Ishida (Kobe Univ.), Yoshinari Kamakura, Nobuya Mori (Osaka Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Matsuto Ogawa (Kobe Univ.) SDM2014-105
Recently, we have developed a Monte Carlo simulator for accurately extracting quasi-ballistic transport parameters in MO... [more] SDM2014-105
pp.53-58
SDM 2013-11-15
10:25
Tokyo Kikai-Shinko-Kaikan Bldg. Analytic Compact Model of Ballistic and Quasi-ballistic Cylindrical Gate-All-Around MOSFET Incorporating Drain-Induced Barrier Lowering Effect
He Cheng (Nagoya Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Kazuo Nakazato (Nagoya Univ.) SDM2013-107
We propose an analytic compact model for ballistic and quasi-ballistic GAA-MOSFET with cylindrical cross section incorpo... [more] SDM2013-107
pp.43-48
SDM 2012-11-16
14:55
Tokyo Kikai-Shinko-Kaikan Bldg ANALYTIC COMPACT MODEL of BALLISTIC and QUASI-BALLISTIC CYLINDRICAL GATE-ALL-AROUND MOSFET INCLUDING TWO SUBBANDS for CIRCUIT SIMULATION
He Cheng (Nagoya Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Tatsuhiro Numata, Kazuo Nakazato (Nagoya Univ.) SDM2012-112
We propose an analytic compact model for quasi-ballistic GAA-MOSFET with cylindrical cross section by using perturbation... [more] SDM2012-112
pp.69-73
SDM 2011-11-11
10:50
Tokyo Kikai-Shinko-Kaikan Bldg. Analytical Compact Model Using Perturbation Method for Circuit Simulation of Ballistic and Quasi-ballistic Gate-All-Around MOSFET with Cylindrical Cross Section
He Cheng (Nagoya Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Tatsuhiro Numata, Kazuo Nakazato (Nagoya Univ.) SDM2011-122
 [more] SDM2011-122
pp.39-43
SDM 2009-11-12
15:55
Tokyo Kikai-Shinko-Kaikan Bldg. Device Modeling and Simulation for CMOS Biosensor Applications
Shigeyasu Uno, Kazuo Nakazato (Nagoya Univ.) SDM2009-141
Modeling and simulation of Ion-sensitive Field-Effect Transistor (ISFET) operation is presented. A brief explanation of ... [more] SDM2009-141
pp.33-37
SIS 2008-12-04
10:40
Osaka Kansai Univ. Investigation of 13.56MHz RFID System with On-Chip Spiral Inductor
Yohei Fujita, Shigeyasu Uno, Kazuo Nakazato (Nagoya Univ.)
RFID system is widely investigated for implantable sensors. Existing inductive coil used at 13.56MHz-RFID communication ... [more] SIS2008-44
pp.13-15
 Results 1 - 7 of 7  /   
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