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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2018-11-09 13:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Review of Recent Sensor Devices Research based on Semiconductor Technologies
-- With Review of SISPAD 2017 Workshop2: "Technologies for Sensor Devices" -- Shigeyasu Uno (Ritsumeikan Univ.) SDM2018-73 |
An overview of recent sensor device research activities based on the semiconductor technologies will be given with a rev... [more] |
SDM2018-73 pp.43-46 |
SDM |
2014-11-07 11:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Extracted Using Monte Carlo Method Hideaki Tsuchiya, Ryoma Ishida (Kobe Univ.), Yoshinari Kamakura, Nobuya Mori (Osaka Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Matsuto Ogawa (Kobe Univ.) SDM2014-105 |
Recently, we have developed a Monte Carlo simulator for accurately extracting quasi-ballistic transport parameters in MO... [more] |
SDM2014-105 pp.53-58 |
SDM |
2013-11-15 10:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Analytic Compact Model of Ballistic and Quasi-ballistic Cylindrical Gate-All-Around MOSFET Incorporating Drain-Induced Barrier Lowering Effect He Cheng (Nagoya Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Kazuo Nakazato (Nagoya Univ.) SDM2013-107 |
We propose an analytic compact model for ballistic and quasi-ballistic GAA-MOSFET with cylindrical cross section incorpo... [more] |
SDM2013-107 pp.43-48 |
SDM |
2012-11-16 14:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
ANALYTIC COMPACT MODEL of BALLISTIC and QUASI-BALLISTIC CYLINDRICAL GATE-ALL-AROUND MOSFET INCLUDING TWO SUBBANDS for CIRCUIT SIMULATION He Cheng (Nagoya Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Tatsuhiro Numata, Kazuo Nakazato (Nagoya Univ.) SDM2012-112 |
We propose an analytic compact model for quasi-ballistic GAA-MOSFET with cylindrical cross section by using perturbation... [more] |
SDM2012-112 pp.69-73 |
SDM |
2011-11-11 10:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Analytical Compact Model Using Perturbation Method for Circuit Simulation of Ballistic and Quasi-ballistic Gate-All-Around MOSFET with Cylindrical Cross Section He Cheng (Nagoya Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Tatsuhiro Numata, Kazuo Nakazato (Nagoya Univ.) SDM2011-122 |
[more] |
SDM2011-122 pp.39-43 |
SDM |
2009-11-12 15:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Device Modeling and Simulation for CMOS Biosensor Applications Shigeyasu Uno, Kazuo Nakazato (Nagoya Univ.) SDM2009-141 |
Modeling and simulation of Ion-sensitive Field-Effect Transistor (ISFET) operation is presented. A brief explanation of ... [more] |
SDM2009-141 pp.33-37 |
SIS |
2008-12-04 10:40 |
Osaka |
Kansai Univ. |
Investigation of 13.56MHz RFID System with On-Chip Spiral Inductor Yohei Fujita, Shigeyasu Uno, Kazuo Nakazato (Nagoya Univ.) |
RFID system is widely investigated for implantable sensors. Existing inductive coil used at 13.56MHz-RFID communication ... [more] |
SIS2008-44 pp.13-15 |
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