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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2019-10-24 09:30 |
Miyagi |
Niche, Tohoku Univ. |
[Invited Talk]
NiAl as Cu alternative for ultrasmall feature sizes Linghan Chen, Junichi Koike, Daisuke Ando, Yuji Sutou (Tohoku Univ.) SDM2019-59 |
Conventional Cu interconnect will suffer from a great line resistivity increase due to aggressive downscaling of the dim... [more] |
SDM2019-59 pp.29-33 |
SDM |
2019-10-24 10:20 |
Miyagi |
Niche, Tohoku Univ. |
[Invited Lecture]
Effect of an oxide layer at Co/Si interface on Schottky barrier height and contact resistivity Koichi Kido, Ken Sato, Rihito Kuroda, Daisuke Ando, Yuji Suto, Junichi Koike (Tohoku Univ.) SDM2019-60 |
[more] |
SDM2019-60 pp.35-38 |
SDM |
2018-10-17 16:35 |
Miyagi |
Niche, Tohoku Univ. |
[Invited Talk]
Cr2Ge2Te6-Based PCRAM Showing Low Resistance Amorphous and High Resistance Crystalline States Shogo Hatayama, Yuji Sutou, Daisuke Ando, Junichi Koike (Tohoku Univ.) SDM2018-56 |
Phase change random access memory (PCRAM) has attracted much attention as one of next generation non-volatile memory. Ge... [more] |
SDM2018-56 pp.21-26 |
SDM |
2018-02-08 10:45 |
Tokyo |
Tokyo Univ. |
[Invited Talk]
Characteristics of Cobalt alloy for low resistivity contact in sub 10 nm FinFET Junichi Koike, Maryamsadat Hosseini, Daisuke Ando, Yuji Sutou (Tohoku Univ.) |
[more] |
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SDM |
2017-02-06 15:00 |
Tokyo |
Tokyo Univ. |
[Invited Talk]
Properties of amorphous Co alloys having liner/barrier function in advanced LSI interconnection Maryamsadat Hosseini, Hiroyuki Koide, Kazuki Watanabe, Daisuke Ando, Yuji Sutou, Junichi Koike (Tohoku Univ.) |
[more] |
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EE |
2006-02-17 14:50 |
Kumamoto |
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Control Characteristics of a Novel Buck Converter for Two Stage Converter Daisuke Ando, Takashi Nabeshima, Terukazu Sato, Kimihiro Nishijima, Tadao Nakano (Oita Univ.) |
[more] |
EE2005-80 pp.115-120 |
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