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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MW | 2024-01-25 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Study on Traps in GaN HEMTs using Low-frequency Y11 and Y22 Toshiyuki Oishi, Shiori Takada (Saga Univ.), Ken Kudara, Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric Corp.)  ED2023-67 MW2023-159 |
[more] | ED2023-67 MW2023-159 pp.7-10 |
| ED, MWPTHz | 2023-12-22 13:40 |
Miyagi | RIEC, Tohoku Univ. (Primary: On-site, Secondary: Online) |
[Invited Talk]
Device Modeling Techniques for Millimeter-wave Band GaN Amplifiers Yutaro Yamaguchi, Shintaro Shinjo (Mitsubishi Electric), Yasuyuki Miyamoto (Titech) ED2023-62 MWPTHz2023-72 |
[more] | ED2023-62 MWPTHz2023-72 pp.40-45 |
| MW | 2023-11-17 12:30 |
Okinawa | Nago City Industrial Support Center (Okinawa) (Primary: On-site, Secondary: Online) |
A Distributed Model with a High Scaling Accuracy for Sub-THz band GaN-HEMTs Yutaro Yamaguchi, Ken Kudara, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric Corp.), Yasuyuki Miyamoto (Titech) MW2023-142 |
[more] | MW2023-142 pp.87-91 |
| MW, AP (Joint) |
2023-09-28 10:10 |
Kochi | Kochi Castle Museum of History (Primary: On-site, Secondary: Online) |
C-Ku-band GaN MMIC Low Noise Amplifier Using Frequency Selective Parallel Feedback Circuit Ken Kudara, Jun Kamioka, Eigo Kuwata, Yutaro Yamaguchi, Yoshitaka Kamo, Shintaro Shinjo (Mitsubishi Electric) MW2023-81 |
This paper represents a C-Ku band GaN MMIC low noise amplifier (LNA) for a transmitter and receiver module. In order to ... [more] | MW2023-81 pp.7-10 |
| MW, ED | 2023-01-27 12:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Effects of GaN traps in GaN HEMTs to Low Frequency Y22 Parameters
-- Device Simulation Study -- Shogo Morokuma (Saga Univ.), Tomohiro Otsuka (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric) ED2022-91 MW2022-150 |
GaN HEMTs are used in high frequency and power electronics applications. Advanced systems demand improvement of characte... [more] | ED2022-91 MW2022-150 pp.29-32 |
| CPM, ED, LQE | 2022-11-24 14:35 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Evaluation of Fe Induced Trap in GaN HEMTs using Low-Frequency Y22 Measurement Taiki Nishida, Toshiyuki Oishi (Saga Univ.), Tomohiro Otsuka, Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Elec. Corp.) ED2022-34 CPM2022-59 LQE2022-67 |
One issue in improving amplifier performance using GaN is evaluating the characteristics of traps. In this study, we eva... [more] | ED2022-34 CPM2022-59 LQE2022-67 pp.49-52 |
| ED, MW | 2022-01-27 13:40 |
Online | Online | Effects of Load Impedances at Third Order Intermodulation Tones Eigo Kuwata, Yutaro Yamaguchi, Masaomi Tsuru (Mitsubishi Electric), Johannes Benedikt (Cardiff University) ED2021-63 MW2021-105 |
This paper reports on new multitone active loadpull measurements at the specific frequencies of third order intermodulat... [more] | ED2021-63 MW2021-105 pp.7-11 |
| MW | 2021-11-18 13:05 |
Kagoshima | Kagoshima University (Primary: On-site, Secondary: Online) |
4-way Power Combiner Including Board-to-Board Transition Using Spring Contact Probes Takuma Nishimura, Hidenori Ishibashi, Yutarou Yamaguchi, Takumi Nagamine, Hidenori Yukawa, Toru Fukasawa, Yoshio Inasawa (MELCO) MW2021-66 |
Conventional SSPA has a method of synthesizing power by mounting multiple MMIC on the board with flip-chip bonding for h... [more] | MW2021-66 pp.1-6 |
| ED, MW | 2020-01-31 15:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Analysis of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation Tomohiro Otsuka, Yutaro Yamaguchi, Shintaro Shinjo (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.) ED2019-103 MW2019-137 |
[more] | ED2019-103 MW2019-137 p.53 |
| MW | 2019-11-14 15:10 |
Okinawa | Minami Daido Villa. Tamokuteki Koryu Center | A Ka-Band CW 15.5W 15.6% Fractional Bandwidth GaN Power Amplifier MMIC Using Wideband BPF Inter-stage Matching Network Keigo Nakatani, Yutaro Yamaguchi, Masatake Hangai, Shintaro Shinjo (MitsubishiElectric) MW2019-105 |
This paper has reported a Ka-band 15.5W power amplifier Monolithic Microwave Integrated Circuit (MMIC) using 0.15m Gall... [more] | MW2019-105 pp.29-34 |
| MW, ED | 2019-01-18 11:30 |
Tokyo | Hitachi, Central Research Lab. | Study on cascode configuration with GaN HEMT and Si diode for high power RF-DC conversion Kosuke Urata, Kosuke Ajiro (Saga Univ.), Yutaro Yamaguti, Otuka Tomohiro, Sinjo Shintaro (Mitsubishi Electric Corp.), Tosiyuki Oisi (Saga Univ.) ED2018-83 MW2018-150 |
[more] | ED2018-83 MW2018-150 pp.75-78 |
| MW | 2018-11-15 10:50 |
Nagasaki | Fukue Cultural Hall | A Ka-Band High Efficiency Doherty Power Amplifier MMIC using GaN-HEMT for 5G Application Keigo Nakatani, Yutaro Yamaguchi, Yuji Komatsuzaki, Shintaro Shinjo (Mitsubishi Electric) MW2018-94 |
[more] | MW2018-94 pp.13-18 |
| EST, MW, OPE, MWP, EMT, IEE-EMT, THz [detail] | 2018-07-19 15:25 |
Hokkaido | A Ka-band GaN Large-Signal Model Considering Trap Effect on Non-linear Capacitance by Using Transient S-parameters Measurement Yutaro Yamaguchi, Tomohiro Otsuka, Masatake Hangai, Shintaro Shinjo (Mitsubishi Electric Corp.), Toshiyuki Oishi (Saga Univ.) EMT2018-30 MW2018-45 OPE2018-33 EST2018-28 MWP2018-29 |
[more] | EMT2018-30 MW2018-45 OPE2018-33 EST2018-28 MWP2018-29 pp.125-130 |
|
| MW, EMCJ, EST, IEE-EMC [detail] | 2017-10-20 16:40 |
Akita | Yupopo | Demonstration of Uniform Heating Distribution Control for Microwave Heating Small Reactor with Solid-State Oscillators Kazuhiro Iyomasa, Yoshifumi Kawamura, Ryota Komaru, Yutaro Yamaguchi, Keigo Nakatani, Takeshi Shiode, Koji Yamanaka, Kazutomi Mori, Hiroshi Fukumoto (Melco) EMCJ2017-58 MW2017-110 EST2017-73 |
(To be available after the conference date) [more] | EMCJ2017-58 MW2017-110 EST2017-73 pp.171-175 |
| MW, ED | 2017-01-27 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Physical model of GaN HEMT on Si including temperature dependence of RF leakage current in substrates Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga univ.) ED2016-107 MW2016-183 |
[more] | ED2016-107 MW2016-183 pp.57-62 |
| MW, ED | 2017-01-27 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Study on dependence of passivation stress for electrical characteristics of AlGaN/GaN HEMTs by TCAD simulation Toshiyuki Oishi (Saga univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric corp.) ED2016-108 MW2016-184 |
Effects of passivation residual stress on electrical characteristics for GaN HEMTs have been studied by using a TCAD sim... [more] | ED2016-108 MW2016-184 pp.63-68 |
| MW | 2016-11-17 14:30 |
Saga | Saga Univ. | Semi-Physical Large Signal Model of GaN HEMTs on Si considering temperature dependence of RF leakage current in Substrates Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric Corp.), Toshiyuki Oishi (Saga Univ.) MW2016-122 |
In this paper, semi-physical large signal model of GaN HEMTs on Si (GaN-on-Si) considering temperature dependence of RF ... [more] | MW2016-122 pp.33-38 |
| MW | 2016-11-17 14:55 |
Saga | Saga Univ. | Industrial microwave heating device using GaN amplifier module Kazuhiro Iyomasa, Koji Yamanaka, Takeshi Shiode, Hiroyuki Mizutani, Masaomi Tsuru, Yoshifumi Kawamura, Takaaki Yoshioka, Yuji Komatsuzaki, Yutaro Yamaguchi, Keigo Nakatani, Ryuta Komaru, Kazutomi Mori, Hiroshi Fukumoto (Mitsubishi Electric Corp.) MW2016-123 |
(To be available after the conference date) [more] | MW2016-123 pp.39-42 |
| MW, WPT | 2016-04-21 11:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A 5.8 GHz-band high efficiency rectifier with a low resistance and high breakdown voltage GaAs Schottky Barrier Diode Marika Nakamura, Yutaro Yamaguchi, Masaomi Tsuru, Yasuki Aihara, Jun Shimokawatoko, Yukihiro Homma, Eiji Taniguchi (Mitsubishi Electric Co.) WPT2016-3 MW2016-3 |
High RF-DC conversion efficiency at high input power are required for rectifiers used in receivers of the microwave powe... [more] | WPT2016-3 MW2016-3 pp.11-15 |
| MW | 2015-05-28 13:50 |
Tokyo | The Univ. of Electro-Commun. | Large Signal Modeling of GaN-on-Si Transistor for Microwave Heating Christer M. Andersson, Yutaro Yamaguchi, Kazuhiro Iyomasa, Yoshifumi Kawamura, Shuichi Sakata, Koji Yamanaka, Hiroshi Fukumoto (Mitsubishi Electric) MW2015-21 |
In this paper, the large signal model of a GaN-on-Si transistor to be employed in microwave heating systems is reported.... [more] | MW2015-21 pp.1-5 |
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