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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, MW |
2020-01-31 11:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
GaN-on-Diamond HEMTs fabricated by Surface-Activated Room-Temperature Bonding Shuichi Hiza (Mitsubishi Electric), Masahiro Fujikawa (Mitsubishi Elctric), Yuki Takiguchi, Kunihiko Nishimura, Eiji Yagyu (Mitsubishi Electric), Takashi Matsumae, Yuichi Kurashima, Hideki Takagi (AIST), Mikio Yamamuka (Mitsubishi Electric) ED2019-97 MW2019-131 |
[more] |
ED2019-97 MW2019-131 pp.21-24 |
MW, ED |
2019-01-17 15:25 |
Tokyo |
Hitachi, Central Research Lab. |
ED2018-78 MW2018-145 |
(To be available after the conference date) [more] |
ED2018-78 MW2018-145 pp.55-58 |
MW, ED |
2019-01-17 15:50 |
Tokyo |
Hitachi, Central Research Lab. |
Reduction of dislocation density leading improvement of current collapse under high electric-field stress by using GaN-on-GaN structure Akifumi Imai, Koji Yoshitsugu, Takuma Nanjo, Tatsuro Watahiki, Mikio Yamamuka (Mitsubishi Electric Co.) ED2018-79 MW2018-146 |
[more] |
ED2018-79 MW2018-146 pp.59-62 |
CPM, LQE, ED |
2016-12-12 15:45 |
Kyoto |
Kyoto University |
Normally-off operation of planar GaN MOS-HFET Takuma Nanjo, Tetsuro Hayashida, Hidetoshi Koyama, Akifumi Imai, Akihiko Furukawa, Mikio Yamamuka (Mitsubishi Electric) ED2016-63 CPM2016-96 LQE2016-79 |
Normally-off operation with high drain current density was firstly demonstrated in simple planar type GaN MOS-HFET with ... [more] |
ED2016-63 CPM2016-96 LQE2016-79 pp.31-34 |
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