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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2017-01-27
09:30
Tokyo Kikai-Shinko-Kaikan Bldg. Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes
Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara, Taisuke Iwai, Naoya Okamoto, Keiji Watanabe (Fujitsu Labs.) ED2016-102 MW2016-178
Noise characteristics of zero-bias backward diodes for terahertz detectors were improved by using a p+-GaAs0.51Sb0.49/n-... [more] ED2016-102 MW2016-178
pp.29-33
ED 2016-12-19
14:40
Miyagi RIEC, Tohoku Univ Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs
Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2016-81
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain... [more] ED2016-81
pp.7-12
ED 2015-12-21
13:45
Miyagi RIEC, Tohoku Univ Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2015-92
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs at 300, 220, 150, ... [more] ED2015-92
pp.7-11
ED 2014-12-23
09:40
Miyagi   Improvement in sensitivity at 170 GHz of GaAsSb-based tunnel diodes by adjusting doping concentration
Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Shoichi Shiba, Naoki Hara, Taisuke Iwai (Fujitus Labs.) ED2014-108
(To be available after the conference date) [more] ED2014-108
pp.57-61
ED 2014-08-01
10:30
Tokyo Kikai-Shinko-Kaikan Bldg. B3-1 [Invited Talk] Highly sensitive GaAsSb-based backward diodes for millimeter-wave detection
Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Shoichi Shiba, Naoki Hara, Taisuke Iwai (Fujitsu Labs.) ED2014-53
We have developed highly sensitive backward diodes instead of conventional Schottky diodes for millimeter-wave detection... [more] ED2014-53
pp.1-6
ED, MW 2006-01-19
15:35
Tokyo Kikai-Shinko-Kaikan Bldg. High Power AlGaN/GaN MIS-HEMT
Masahito Kanamura, Toshihide Kikkawa, Taisuke Iwai, Kenji Imanishi, Tokuro Kubo, Kazukiyo Joshin (Fujitsu Labs. Ltd.)
 [more] ED2005-208 MW2005-162
pp.51-55
 Results 1 - 6 of 6  /   
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