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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2023-12-01 14:50 |
Shizuoka | Fabrication of vertical AlGaN-based UV-B LD Toma Nishibayashi, Ryosuke Kondo, Eri Matsubara, Ryoya Yamada, Yoshinori Imoto, Koki Hattori, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi (Meijo Univ.), Hideto Miyake (Mie Univ.), Kohei Miyoshi, Koichi Naniwae (Ushio Inc.), Akihiko Yamaguchi (Seishin Trading Co. Ltd.)  ED2023-33 CPM2023-75 LQE2023-73 |
In this study, we report on the fabrication method and characteristics of vertical UV-B laser diodes, which are advantag... [more] | ED2023-33 CPM2023-75 LQE2023-73 pp.84-87 |
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| LQE, ED, CPM | 2023-12-01 16:15 |
Shizuoka | The properties of UV-B laser diodes on AlN nanopillars by using wet etching method Yoshinori Imoto, Ryosuke Kondo, Ryoya Yamada, Koki Hattori, Toma Nishibayashi, , Sho Iwayama, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ), Hideto Miyake (Mie Univ) ED2023-36 CPM2023-78 LQE2023-76 |
Our groups reported that we could fabricate high quality lattice relaxed AlGaN grown on periodic AlN nanopillars.and thr... [more] | ED2023-36 CPM2023-78 LQE2023-76 pp.98-101 |
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| CPM, ED, LQE | 2022-11-25 13:20 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Fabrication of AlGaN-based UV-B semiconductor lasers and their device performance Ayumu Yabutani, Ryota Hasegawa, Ryosuke kondo, Eri Matsubara (Meijo Univ.), Sho Iwayama (Meijo Univ./Mie Univ.), Yoshito Jin, Tatsuya Matsumoto, Masamitsu Toramaru (JSW), Hironori Torii (JSW afty), Daichi Imai, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Hideto Miyake (Mie Univ.) ED2022-44 CPM2022-69 LQE2022-77 |
[more] | ED2022-44 CPM2022-69 LQE2022-77 pp.89-92 |
| LQE, CPM, ED | 2020-11-26 10:45 |
Online | Online | Calculation of carrier injection efficiency of AlGaN UVB Laser Diode Kosuke Sato (Asahi-Kasei), Tomoya Omori, Kazuki Yamada, Shunya Tanaka, Sayaka Ishizuka, Shohei Teramura, Sho Iwayama, Motoaki Iwaya (Meijo Univ.), Hideto Miyake (Mie Univ.), Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2020-3 CPM2020-24 LQE2020-54 |
[more] | ED2020-3 CPM2020-24 LQE2020-54 pp.9-12 |
| LQE, CPM, ED | 2020-11-27 13:40 |
Online | Online | Optimization of the optical waveguide layer in AlGaN-based UV-B LD Shunya Tanaka (Meijo Univ.), Kosuke Sato (Asahi-Kasei), Shinji Yasue, Yuya Ogino, Kazuki Yamada, Sayaka Ishizuka, Tomoya Omori, Shohei Teramura, Sho Iwayama (Meijo Univ.), Hideto Miyake (Mie Univ.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2020-20 CPM2020-41 LQE2020-71 |
Recently, the group reported the realization of current injection semiconductor lasers in the UV-B region. In the future... [more] | ED2020-20 CPM2020-41 LQE2020-71 pp.75-78 |
| LQE, CPM, ED | 2020-11-27 14:30 |
Online | Online | Crystalline Quality Improvement of Sputtered h-BN on Sapphire by High-Temperature Annealing Ryoji Kataoka, Haruhiko Koizumi, Sho Iwayama, Hideto Miyake (Mie Univ.) ED2020-22 CPM2020-43 LQE2020-73 |
Hexagonal boron nitride(h-BN) is a two-dimensional layered materials and is expected to functions as a strain relaxation... [more] | ED2020-22 CPM2020-43 LQE2020-73 pp.83-86 |
| CPM, LQE, ED | 2019-11-21 14:35 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | AlGaN-based electron beam excitation UV lasers using AlGaN well layer Yusuke Sakuragi, Shinji Yasue, Shohei Teramura, Yuya Ogino, Syunya Tanaka, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Iwamu Akasaki (Meijo University), HIdeto Miyake (Mie University) ED2019-43 CPM2019-62 LQE2019-86 |
(To be available after the conference date) [more] | ED2019-43 CPM2019-62 LQE2019-86 pp.45-48 |
| CPM, LQE, ED | 2019-11-21 15:50 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Polarization characteristics in GaN-based vertical cavity surface emitting laser with AlInN/GaN distribution bragg reflectors Kaoru Oda, Ryosuke Iida, Sho Iwayama, Kazuki Kiyohara, Tetsuya Takeuci, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.) ED2019-46 CPM2019-65 LQE2019-89 |
In this study, we investigated polarization characteristics of GaN-based VCSELs. In particular, dependences of substrate... [more] | ED2019-46 CPM2019-65 LQE2019-89 pp.57-60 |
| CPM, LQE, ED | 2019-11-22 13:25 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Dislocation density dependence of optical gain and internal loss in UV-B region AlGaN active layer Shunya Tanaka, Yuta Kawase (Meijo Univ.), Kosuke Sato (Asahi-Kasei/Meijo Univ.), Shinji Yasue, Shohei Teramura, Yuya Ogino (Meijo Univ.), Sho Iwayama (Meijo Univ./Mie Univ.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Akasaki Research Center, Nagoya Univ.), Hideto Miyake (Mie Univ.) ED2019-55 CPM2019-74 LQE2019-98 |
The dependence of threshold pumping power density, optical gain, and internal loss on the dislocation density of AlGaN-b... [more] | ED2019-55 CPM2019-74 LQE2019-98 pp.93-96 |
| ED, LQE, CPM | 2018-11-30 12:40 |
Aichi | Nagoya Inst. tech. | GaN-based verticalcavity surfaceemitting lasers with buried SiO2 optical waveguide structures Iida Ryosuke (Meijo Univ.), Natsumi Hayashi, Wataru Muranaga, Syo Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.) ED2018-47 CPM2018-81 LQE2018-101 |
We have investigated buried SiO2 optical waveguide structures towards low threshold current in GaN-based vertical cavity... [more] | ED2018-47 CPM2018-81 LQE2018-101 pp.71-74 |
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