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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2015-06-19
13:00		 Aichi VBL, Nagoya Univ. First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation
Shingo Kawachi, Hiroki Shirakawa, Masaaki Araidai (Nagoya Univ.), Hiroyuki Kageshima (Shimane Univ.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Nagoya Univ.) SDM2015-45		 Why is high-quality Si/SiO2 interface readily fabricated by simple thermal oxidation? Even though the question is closel... [more] SDM2015-45
pp.37-40
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