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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MW, ED |
2017-01-26 14:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Current Status of Millimeter-Wave GaN-HEMTs Kozo Makiyama, Yoshitaka Niida, Shiro, Toshihiro Ohki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Youichi Kamata, Kazukiyo Jpshin, Keiji Watanabe (Fujitsu), Yasuyuki Miyamoto (Tokyo Tech.) ED2016-98 MW2016-174 |
[more] |
ED2016-98 MW2016-174 pp.13-16 |
ED |
2016-07-23 14:00 |
Tokyo |
Tokyo Metropolitan Univ. Minami-Osawa Campus, International House |
Surface-oxide-controlled InAlN/GaN MOS-HEMT Using Water Vapor Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Kazukiyo Joshin (Fujitsu Lab.) ED2016-27 |
[more] |
ED2016-27 pp.1-4 |
LQE, ED, CPM |
2014-11-28 13:15 |
Osaka |
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Suppression in Current Collapse of Millimeter-Wave GaN-HEMT Using MSQ-Based Low-k Insulator Films Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Satoshi Masuda, Kazukiyo Joshin (Fujitsu) ED2014-90 CPM2014-147 LQE2014-118 |
We have investigated the effect of moisture on current collapse of GaN high electron mobility transistor (GaN-HEMT) when... [more] |
ED2014-90 CPM2014-147 LQE2014-118 pp.81-84 |
CPM, LQE, ED |
2010-11-11 16:50 |
Osaka |
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High-Power GaN-HEMT for Millimeter-Wave Amplifier Kozo Makiyama, Toshihiro Ohki, Naoya Okamoto, Masahito Kanamura, Satoshi Masuda, Yasuhiro Nakasha, Kazukiyo Joshin, Kenji Imanishi (Fujitsu, Fujitsu Labs.), Naoki Hara, Shiro Ozaki, Norikazu Nakamura (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu, Fujitsu Labs.) ED2010-153 CPM2010-119 LQE2010-109 |
[more] |
ED2010-153 CPM2010-119 LQE2010-109 pp.51-54 |
MW |
2009-09-25 15:15 |
Tokyo |
Univ. of Electro-Communications |
C-band 340-W and X-band 100-W GaN Power Amplifiers with Over 50-% PAE Hisao Shigematsu, Yusuke Inoue, Akihiko Akasegawa, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab.) MW2009-86 |
In this paper, we report an X-band power amplifier with over 100-W output power using 0.25-μm GaN-HEMTs and a C-band pow... [more] |
MW2009-86 pp.73-78 |
SDM, ED |
2009-06-24 14:00 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
[Invited Talk]
CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband Toshihide Suzuki, Yoichi Kawano (Fujitsu/Fujitsu Labs.), Masaru Sato (Fujitsu Labs.), Yasuhiro Nakasha, Tatsuya Hirose (Fujitsu/Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Kazukiyo Joshin (Fujitsu/Fujitsu Labs.) ED2009-50 SDM2009-45 |
This paper presents quasi-millimeter and millimeter power amplifiers (PA) fabricated in a standard 90-nm CMOS process. A... [more] |
ED2009-50 SDM2009-45 pp.1-4 |
ED |
2009-06-12 11:25 |
Tokyo |
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Effect of Epitaxial Layer Design on Drain Leakage Current for Millimeter-Wave GaN-HEMT Atsushi Yamada, Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu and Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu and Fujitsu Labs.) ED2009-48 |
In this paper, GaN channel and AlGaN buffer layer structure in the GaN-HEMT was optimized to achieve a good balance betw... [more] |
ED2009-48 pp.63-67 |
MW, ED |
2009-01-16 09:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
C-band GaN-HEMT Power Amplifier with Over 300-W Output Power and Over 50-% Efficiency Hisao Shigematsu, Yusuke Inoue, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab. Ltd.,) ED2008-218 MW2008-183 |
[more] |
ED2008-218 MW2008-183 pp.113-118 |
MW, ED |
2009-01-16 10:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
High-Power GaN-HEMT with High Three-Terminal Breakdown Voltage for W-band Applications Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu Ltd/Fujitsu Lab. Ltd.), Naoki Hara (Fujitsu Lab. Ltd.), Toshihide Kikkawa (Fujitsu Ltd/Fujitsu Lab. Ltd.) ED2008-221 MW2008-186 |
We reported on a technology to improve the three-terminal breakdown voltage of a GaN high electron mobility transistor (... [more] |
ED2008-221 MW2008-186 pp.129-133 |
LQE, ED, CPM |
2008-11-28 13:55 |
Aichi |
Nagoya Institute of Technology |
An Over 100 W AlGaN/GaN Enhancement-Mode HEMT Power Amplifier Toshihiro Ohki, Toshihide Kikkawa, Masahito Kanamura, Kenji Imanishi, Kozo Makiyama, Naoya Okamoto, Kazukiyo Joshin, Naoki Hara (Fujitsu, Fujitsu Labs.) ED2008-178 CPM2008-127 LQE2008-122 |
[more] |
ED2008-178 CPM2008-127 LQE2008-122 pp.131-136 |
MW, EMCJ |
2008-10-23 16:45 |
Yamagata |
Yamagata Univ. |
Millimeter-Wave Power Amplifiers in 90nm CMOS Toshihide Suzuki, Yoichi Kawano, Masaru Sato, Tatsuya Hirose, Naoki Hara, Kazukiyo Joshin (FJ Lab.) EMCJ2008-67 MW2008-111 |
This paper introduces millimeter-wave band power amplifiers (PAs) using standard 90nm CMOS technology. By developing an ... [more] |
EMCJ2008-67 MW2008-111 pp.47-51 |
SDM, R, ED |
2007-11-16 15:20 |
Osaka |
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Degradation-Mode Analysis for Highly Reliable GaN-HEMT Yusuke Inoue, Satoshi Masuda, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Hisao Shigematsu, Kazukiyo Joshin (Fujitsu Labs. Ltd.) R2007-51 ED2007-184 SDM2007-219 |
[more] |
R2007-51 ED2007-184 SDM2007-219 pp.27-31 |
MW, ED |
2007-01-19 15:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Current collapse of inslated-gate GaN-HEMT Masahito Kanamura, Toshihiro Ohki, Kenji Imanishi, Kozo Makiyama, Naoya Okamoto (Fujitsu, Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa, Kazukiyo Joshin (Fujitsu, Fujitsu Labs.) |
[more] |
ED2006-236 MW2006-189 pp.199-203 |
MW |
2006-09-07 10:50 |
Tokyo |
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[Special Talk]
- Kiyomichi Araki (Tokyo Inst. of Tech.), Keren Li (NICT), Kenji Nishikawa (NTT), Kazukiyo Joshin (Fujitsu), Toshihiko Yoshimasu (Waseda Univ.), Futoshi Kuroki (KNCT), Hideyuki Oh-hashi, Moriyasu Miyazaki (Mitsubishi Electric), Zhewang Ma (Saitama Univ.) |
[more] |
MW2006-106 pp.175-183 |
ED, MW |
2006-01-19 15:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Highly Uniform GaN-HEMT on 3-inch Conductive SiC Substrate for Wireless Basestation Applications Toshihide Kikkawa, Kenji Imanishi, Masahito Kanamura, Kazukiyo Joshin (Fujitsu Labs.) |
[more] |
ED2005-207 MW2005-161 pp.45-49 |
ED, MW |
2006-01-19 15:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
High Power AlGaN/GaN MIS-HEMT Masahito Kanamura, Toshihide Kikkawa, Taisuke Iwai, Kenji Imanishi, Tokuro Kubo, Kazukiyo Joshin (Fujitsu Labs. Ltd.) |
[more] |
ED2005-208 MW2005-162 pp.51-55 |
MW, ED |
2005-01-18 13:50 |
Tokyo |
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- Masahito Kanamura, Toshihide Kikkawa, Kazukiyo Joshin (Fujitsu Lab.) |
[more] |
ED2004-220 MW2004-227 pp.47-51 |
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