|
|
All Technical Committee Conferences (Searched in: All Years)
|
|
Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
|
Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2014-11-06 13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Recent Progress in Electronic Device Materials Design by Computational Physics Hiroyuki Kageshima (Shimane Univ.) SDM2014-101 |
In the computational physics, the first-principles calculation method is powerful and attractive because it can precisel... [more] |
SDM2014-101 pp.31-36 |
ED, SDM |
2012-02-07 16:55 |
Hokkaido |
|
Light emission from Silicon quantum-well by tunneling current injection Jinichiro Noborisaka, Katsuhiko Nishiguchi, Hiroyuki Kageshima, Akira Fujiwara (NTT BRL) ED2011-149 SDM2011-166 |
We demonstrated electron tunneling spectroscopy of thin silicon-on-insulator (SOI) metal-oxide-semiconductor field-effec... [more] |
ED2011-149 SDM2011-166 pp.41-46 |
SDM |
2011-07-04 09:20 |
Aichi |
VBL, Nagoya Univ. |
Structure and formation of epitaxial graphene on SiC(0001) Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi (NTT Basic Research Labs.), Masao Nagase (Univ. Tokushima) SDM2011-51 |
Epitaxial graphene growth on SiC(0001) surface is theoretically studied by the first-principles calculation. It is found... [more] |
SDM2011-51 pp.7-10 |
SDM, ED |
2009-06-24 14:00 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
[Invited Talk]
Metrology of microscopic properties of graphene on SiC Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, Hiroshi Yamaguchi (NTT BRL) ED2009-61 SDM2009-56 |
Graphene has recently attracted a lot of research interest because of its superior electric properties. Thermally grown ... [more] |
ED2009-61 SDM2009-56 pp.47-52 |
SDM |
2009-06-19 10:20 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
First-Principles Calculations for Interfacial Reaction during Si Oxidation Toru Akiyama (Mie Univ.), Hiroyuki Kageshima (NTT Corp.), Masashi Uematsu (Keio Univ.), Tomonori Ito (Mie Univ.) SDM2009-28 |
The interfacial reaction processes during Si oxidation are investigated based on first-principles total-energy electroni... [more] |
SDM2009-28 pp.9-13 |
SDM, ED |
2009-02-26 14:10 |
Hokkaido |
Hokkaido Univ. |
Magnetic properties of Mn-implanyed SOI layers Yasuaki Miyazaki (NTT/Keio Univ.), Yukinori Ono, Hiroyuki Kageshima, Masao Nagase, Akira Fujiwara (NTT), Eiji Ohta (Keio Univ.) ED2008-225 SDM2008-217 |
[more] |
ED2008-225 SDM2008-217 pp.7-11 |
|
|
|
Copyright and reproduction :
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
|
[Return to Top Page]
[Return to IEICE Web Page]
|