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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED |
2013-04-19 11:35 |
Miyagi |
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Formation of qualified epitaxial graphene on 6H-SiC(0001) by high temperature annealing in Ar ambient Kazutoshi Funakubo, Shuya Inomata, Ryo Inomata, Goon-Ho Park (Tohoku Univ.), Masato Kotsugi (JASRI), Hirokazu Fukidome, Maki Suemitsu (Tohoku Univ.) ED2013-15 |
Recently, graphene has attracted increasing attention as a new FET channel material to substitute Si. However, the field... [more] |
ED2013-15 pp.59-62 |
CPM |
2012-10-27 12:15 |
Niigata |
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Photoluminescence characteristics of high-density Ge nanodots on Si substrate by gas source MBE Yutaka Anezaki, Kai Sato, Takahiro Kato, Ariyuki Kato, Hideyuki Toyota (Nagaoka Univ. Techno.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Techno.) CPM2012-111 |
Ge nanodots were formed on Si(001)-2˚off substrates after the formation of Si c(4×4) structure by gas-source molecu... [more] |
CPM2012-111 pp.97-100 |
CPM |
2012-08-08 13:50 |
Yamagata |
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Fabrication of high-density Ge nanodots/SiC stacked structure by gas source MBE and its PL characteristics Yutaka Anezaki, Kai Sato, Takahiro Kato, Ariyuki Kato (Nagaoka Univ. Technol.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirsaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Technol.) CPM2012-35 |
[more] |
CPM2012-35 pp.11-15 |
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