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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 21  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MWPTHz 2023-12-22
14:20
Miyagi RIEC, Tohoku Univ.
(Primary: On-site, Secondary: Online)
MOCVD growth and device characteristics of N-polar GaN HEMT with high-resistivity C-doped GaN buffer
Yuki Yoshiya, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2023-63 MWPTHz2023-73
MOCVD-grown N-polar GaN HEMTs with high-resistivity carbon-doped GaN buffer were fabricated. Carbon auto doping in buffe... [more] ED2023-63 MWPTHz2023-73
pp.46-51
OCS, LQE, OPE 2023-10-19
13:50
Kochi
(Primary: On-site, Secondary: Online)
Integration of Spot-size Converters into Membrane Lasers on SiC -- Improved fiber-coupled Output Power Enabling Fiber-amplifier-free Transmission of 100-GBaud Signals --
Suguru Yamaoka, Takuma Aihara, Nikolaos-Panteleimon Diamantopoulos, Hidetaka Nishi, Takuro Fujii, Yoshiho Maeda, Hiroki Sugiyama, Tatsurou Hiraki, Koji Takeda, Toru Segawa, Shinji Matsuo (NTT) OCS2023-31 OPE2023-86 LQE2023-33
Membrane lasers on SiC provide the fastest direct modulation, but the SiC’s medium refractive index of 2.6 prevents the ... [more] OCS2023-31 OPE2023-86 LQE2023-33
pp.24-27
MW 2023-03-02
16:25
Tottori Tottori Univ.
(Primary: On-site, Secondary: Online)
[Special Talk] 220-325 GHz High Gain and High Common-mode rejection Differential Amplifier in 60-nm InP-HEMT technology
Hiroshi Hamada, Takuya Tsutsumi, Adam Pander, Hideaki Matsuzaki, Hiroki Sugiyama, Hiroyuki Takahashi, Hideyuki Nosaka (NTT) MW2022-169
 [more] MW2022-169
pp.70-75
ED, MWPTHz 2022-12-19
16:05
Miyagi   [Invited Talk] InP-HEMT Fabrication Process Technology for Beyond 5G Wireless Network with Tera-Hertz Band
Takuya Tsutsumi, Hiroshi Hamada, Teruo Jyo, Hiroki Sugiyama, Taro Sasaki, Hiroyuki Takahashi, Fumito Nakajima (NTT) ED2022-76 MWPTHz2022-47
Next-generation "Beyond 5G (B5G) / 6G" wireless network systems have been researched and developed for meeting with rapi... [more] ED2022-76 MWPTHz2022-47
pp.23-27
ED, MWPTHz 2022-12-19
16:45
Miyagi   Evaluation of InP-HEMTs with In0.8Ga0.2As/InAs composite channel for terahertz applications
Taro Sasaki, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2022-77 MWPTHz2022-48
Terahertz ICs have been attracting much attention due to its potential use of next generation wireless communications, s... [more] ED2022-77 MWPTHz2022-48
pp.28-33
ED, THz 2021-12-21
09:00
Miyagi
(Primary: On-site, Secondary: Online)
[Invited Talk] InP HEMT based Tera-hertz IC Fabrication Technology for Beyond 5G/6G Application
Takuya Tsutsumi, Hirosh Hamada, Hiroki Sugiyama, Teruo Jyo, Hiroyuki Takahashi, Hideaki Matsuzaki (NTT) ED2021-55
In this report, we focuses fabrication processes of InP-based hight-mobility transistors (InP-HEMTs) and Tera-Hertz mono... [more] ED2021-55
pp.34-39
MWP 2020-05-28
13:30
Online Online [Invited Talk] Fabrication Process of InP-HEMT-based Sub-millimeter Wave ICs for Beyond 5G Application
Takuya Tsutsumi, Hiroki Sugiyama, Hiroshi Hamada, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) MWP2020-1
The 300-GHz sub-millimeter-wave band is one of the candidate frequency for “Beyond 5G” networks to meet rapidly increasi... [more] MWP2020-1
pp.1-6
ED, THz [detail] 2019-12-23
16:20
Miyagi   InP Wafer-level Backside Process for Future Tera-hertz Operation
Takuya Tsutsumi, Hiroshi Hamada, Hiroki Sugiyama, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) ED2019-82
The sub-millimeter-wave band would be utilized in future mobile networks to cope with increasing data rates. InP-based S... [more] ED2019-82
pp.23-28
MW, ED 2019-01-18
13:00
Tokyo Hitachi, Central Research Lab. [Invited Lecture] Ultra-high-speed IC technologies for optical and wireless communications
Hideyuki Nosaka, Munehiko Nagatani, Hiroshi Hamada, Teruo Jyo, Hitoshi Wakita, Takuya Tsutsumi, Hiroki Sugiyama, Miwa Mutoh, Minoru Ida, Hideaki Matsuzaki (NTT) ED2018-84 MW2018-151
 [more] ED2018-84 MW2018-151
pp.79-84
AP, MW
(Joint)
2018-09-20
14:55
Tokyo Tokyo Tech 300 GHz, 100 Gb/s wireless transceiver based on InP-HEMT technology
Hiroshi Hamada (NTT), Takuya Fujimura, Ibrahim Abdo, Kenichi Okada (Tokyo Tech), Takuya Tsutsumi, Ho-jin Song, Hiroki Sugiyama, Hideaki Matsuzaki, Hideyuki Nosaka (NTT) MW2018-60
These days, wireless systems which can support the data rate of 100 Gb/s are being researched for the next generation of... [more] MW2018-60
pp.7-12
LQE 2018-07-12
13:55
Hokkaido   Reduction of threading dislocations and antiphase domains in MOVPE-grown GaAs on Si(100)
Ryo Nakao, Tomonari Sato, Hiroki Sugiyama, Shinji Matsuo (NTT) LQE2018-22
 [more] LQE2018-22
pp.9-12
ED 2016-12-19
14:00
Miyagi RIEC, Tohoku Univ [Invited Talk] Evaluation of transistor performance in single and double δ-doping in InP-based high-electron-mobility transistors with MOVPE-grown InAs/In0.8Ga0.2As quantum-well
Amine El Moutaouakil, Hiroki Sugiyama, Hideaki Matsuzaki (NTT) ED2016-80
InP-based high-electron-mobility transistors (HEMTs) with InAs quantum-well have exhibited record high-speed performance... [more] ED2016-80
pp.1-5
ED 2014-12-22
14:10
Miyagi   Millimeterwave-photomixing by InGaAs channel HEMT and graphene channel FETs
Tetsuya Kawasaki, Tomohiro Yoshida, Kenta Sugawara, Adrian Dobroiu, Takayuki Watanabe, Hiroki Sugiyama, Hiroyuki Wakou (Tohoku Univ.), Jun-ichi Kani, Jun Terada, Shigeru Kuwano (NTT), Hiroki Ago, Kenji Kawahara (Kyushu Univ.), Katsumi Iwatsuki, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2014-100
We experimentally investigated the photomixing function in the millimeter wave range by using InGaAs channel high electr... [more] ED2014-100
pp.9-13
ED, MW 2014-01-17
13:30
Tokyo Kikai-Shinko-Kaikan Bldg. A design method of the full-waveguide-band MMIC mixer for 90-140 GHz
Hiroshi Hamada, Toshihiko Kosugi, Hideaki Matsuzaki, Hiroki Sugiyama, Hideyuki Nosaka (NTT) ED2013-129 MW2013-194
MMIC mixer circuit for the full-waveguide-band spectrum analysis in 90-140 GHz will be reported. We designed the drain-i... [more] ED2013-129 MW2013-194
pp.109-113
ED, MW 2012-01-12
10:35
Tokyo Kikai-Shinko-Kaikan Bldg Low-Turn-on-Voltage Double Heterojunction Bipolar Transistors with a Narrow-Band-Gap InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition
Takuya Hoshi, Hiroki Sugiyama, Haruki Yokoyama, Kenji Kurishima, Minoru Ida (NTT) ED2011-130 MW2011-153
Because of the significant increase of data traffic, there is now a strong demand for reducing the power consumptions of... [more] ED2011-130 MW2011-153
pp.63-68
ED 2011-12-14
15:50
Miyagi Tohoku University A 140-GHz Receiver Array IC and Sub-Assembly for Passive Imaging System -- Development of Compact Passive Imaging System --
Toshihiko Kosugi, Hiroki Sugiyama, Hideaki Matsuzaki, Koichi Murata (NTT Photonics Lab.) ED2011-105
 [more] ED2011-105
pp.31-34
ED 2010-12-16
14:10
Miyagi Tohoku University (Research Institute of Electrical Communication) Transit Time Reduction with Graded Emitter in Resonant Tunneling Diode Terahertz Oscillators
Atsushi Teranishi, Safumi Suzuki, Kaoru Shizuno, Masahiro Asada (Tokyo Tech), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2010-159
We fabricated terahertz oscillators using GaInAs/AlAs double-barrier resonant tunneling diodes with graded emitters on I... [more] ED2010-159
pp.7-12
ED, SDM 2010-06-30
16:10
Tokyo Tokyo Inst. of Tech. Ookayama Campus Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doped structures
Safumi Suzuki, Kiyohito Sawada, Atsushi Teranishi, Masahiro Asada (Tokyo Inst. of Tech.), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2010-61 SDM2010-62
We demonstrate fundamental oscillations at around 900 GHz with low bias voltages in resonant tunnelling diodes (RTDs) ha... [more] ED2010-61 SDM2010-62
pp.47-48
ED 2009-11-29
15:55
Osaka Osaka Science & Technology Center High Breakdown Voltage InP HEMT 125GHz, 140mW MW Power Amplifier -- Development of 120GHz Broadband Wireless System --
Toshihiko Kosugi, Hiroki Sugiyama (NTT PH Lab.), Akihiko Hirata, Naoya Kukutsu, Hiroyuki Takahashi (NTT MI Lab.), Koichi Murata (NTT PH Lab.) ED2009-164
 [more] ED2009-164
pp.25-30
ED 2009-11-30
09:00
Osaka Osaka Science & Technology Center Resonant Tunneling Diode Terahertz (0.8-0.9THz) Oscillators with Spike Doping for Low Voltage Operation
Kiyohito Sawada, Safumi Suzuki, Atsushi Teranishi, Masato Shiraishi, Masahiro Asada (Tokyo Tech.), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2009-166
We demonstrate fundamental oscillations at around 900 GHz with low bias voltages in resonant tunneling diodes (RTDs) hav... [more] ED2009-166
pp.37-40
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