Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, MWPTHz |
2023-12-22 14:20 |
Miyagi |
RIEC, Tohoku Univ. (Primary: On-site, Secondary: Online) |
MOCVD growth and device characteristics of N-polar GaN HEMT with high-resistivity C-doped GaN buffer Yuki Yoshiya, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2023-63 MWPTHz2023-73 |
MOCVD-grown N-polar GaN HEMTs with high-resistivity carbon-doped GaN buffer were fabricated. Carbon auto doping in buffe... [more] |
ED2023-63 MWPTHz2023-73 pp.46-51 |
OCS, LQE, OPE |
2023-10-19 13:50 |
Kochi |
(Primary: On-site, Secondary: Online) |
Integration of Spot-size Converters into Membrane Lasers on SiC
-- Improved fiber-coupled Output Power Enabling Fiber-amplifier-free Transmission of 100-GBaud Signals -- Suguru Yamaoka, Takuma Aihara, Nikolaos-Panteleimon Diamantopoulos, Hidetaka Nishi, Takuro Fujii, Yoshiho Maeda, Hiroki Sugiyama, Tatsurou Hiraki, Koji Takeda, Toru Segawa, Shinji Matsuo (NTT) OCS2023-31 OPE2023-86 LQE2023-33 |
Membrane lasers on SiC provide the fastest direct modulation, but the SiC’s medium refractive index of 2.6 prevents the ... [more] |
OCS2023-31 OPE2023-86 LQE2023-33 pp.24-27 |
MW |
2023-03-02 16:25 |
Tottori |
Tottori Univ. (Primary: On-site, Secondary: Online) |
[Special Talk]
220-325 GHz High Gain and High Common-mode rejection Differential Amplifier in 60-nm InP-HEMT technology Hiroshi Hamada, Takuya Tsutsumi, Adam Pander, Hideaki Matsuzaki, Hiroki Sugiyama, Hiroyuki Takahashi, Hideyuki Nosaka (NTT) MW2022-169 |
[more] |
MW2022-169 pp.70-75 |
ED, MWPTHz |
2022-12-19 16:05 |
Miyagi |
|
[Invited Talk]
InP-HEMT Fabrication Process Technology for Beyond 5G Wireless Network with Tera-Hertz Band Takuya Tsutsumi, Hiroshi Hamada, Teruo Jyo, Hiroki Sugiyama, Taro Sasaki, Hiroyuki Takahashi, Fumito Nakajima (NTT) ED2022-76 MWPTHz2022-47 |
Next-generation "Beyond 5G (B5G) / 6G" wireless network systems have been researched and developed for meeting with rapi... [more] |
ED2022-76 MWPTHz2022-47 pp.23-27 |
ED, MWPTHz |
2022-12-19 16:45 |
Miyagi |
|
Evaluation of InP-HEMTs with In0.8Ga0.2As/InAs composite channel for terahertz applications Taro Sasaki, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2022-77 MWPTHz2022-48 |
Terahertz ICs have been attracting much attention due to its potential use of next generation wireless communications, s... [more] |
ED2022-77 MWPTHz2022-48 pp.28-33 |
ED, THz |
2021-12-21 09:00 |
Miyagi |
(Primary: On-site, Secondary: Online) |
[Invited Talk]
InP HEMT based Tera-hertz IC Fabrication Technology for Beyond 5G/6G Application Takuya Tsutsumi, Hirosh Hamada, Hiroki Sugiyama, Teruo Jyo, Hiroyuki Takahashi, Hideaki Matsuzaki (NTT) ED2021-55 |
In this report, we focuses fabrication processes of InP-based hight-mobility transistors (InP-HEMTs) and Tera-Hertz mono... [more] |
ED2021-55 pp.34-39 |
MWP |
2020-05-28 13:30 |
Online |
Online |
[Invited Talk]
Fabrication Process of InP-HEMT-based Sub-millimeter Wave ICs for Beyond 5G Application Takuya Tsutsumi, Hiroki Sugiyama, Hiroshi Hamada, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) MWP2020-1 |
The 300-GHz sub-millimeter-wave band is one of the candidate frequency for “Beyond 5G” networks to meet rapidly increasi... [more] |
MWP2020-1 pp.1-6 |
ED, THz [detail] |
2019-12-23 16:20 |
Miyagi |
|
InP Wafer-level Backside Process for Future Tera-hertz Operation Takuya Tsutsumi, Hiroshi Hamada, Hiroki Sugiyama, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) ED2019-82 |
The sub-millimeter-wave band would be utilized in future mobile networks to cope with increasing data rates. InP-based S... [more] |
ED2019-82 pp.23-28 |
MW, ED |
2019-01-18 13:00 |
Tokyo |
Hitachi, Central Research Lab. |
[Invited Lecture]
Ultra-high-speed IC technologies for optical and wireless communications Hideyuki Nosaka, Munehiko Nagatani, Hiroshi Hamada, Teruo Jyo, Hitoshi Wakita, Takuya Tsutsumi, Hiroki Sugiyama, Miwa Mutoh, Minoru Ida, Hideaki Matsuzaki (NTT) ED2018-84 MW2018-151 |
[more] |
ED2018-84 MW2018-151 pp.79-84 |
AP, MW (Joint) |
2018-09-20 14:55 |
Tokyo |
Tokyo Tech |
300 GHz, 100 Gb/s wireless transceiver based on InP-HEMT technology Hiroshi Hamada (NTT), Takuya Fujimura, Ibrahim Abdo, Kenichi Okada (Tokyo Tech), Takuya Tsutsumi, Ho-jin Song, Hiroki Sugiyama, Hideaki Matsuzaki, Hideyuki Nosaka (NTT) MW2018-60 |
These days, wireless systems which can support the data rate of 100 Gb/s are being researched for the next generation of... [more] |
MW2018-60 pp.7-12 |
LQE |
2018-07-12 13:55 |
Hokkaido |
|
Reduction of threading dislocations and antiphase domains in MOVPE-grown GaAs on Si(100) Ryo Nakao, Tomonari Sato, Hiroki Sugiyama, Shinji Matsuo (NTT) LQE2018-22 |
[more] |
LQE2018-22 pp.9-12 |
ED |
2016-12-19 14:00 |
Miyagi |
RIEC, Tohoku Univ |
[Invited Talk]
Evaluation of transistor performance in single and double δ-doping in InP-based high-electron-mobility transistors with MOVPE-grown InAs/In0.8Ga0.2As quantum-well Amine El Moutaouakil, Hiroki Sugiyama, Hideaki Matsuzaki (NTT) ED2016-80 |
InP-based high-electron-mobility transistors (HEMTs) with InAs quantum-well have exhibited record high-speed performance... [more] |
ED2016-80 pp.1-5 |
ED |
2014-12-22 14:10 |
Miyagi |
|
Millimeterwave-photomixing by InGaAs channel HEMT and graphene channel FETs Tetsuya Kawasaki, Tomohiro Yoshida, Kenta Sugawara, Adrian Dobroiu, Takayuki Watanabe, Hiroki Sugiyama, Hiroyuki Wakou (Tohoku Univ.), Jun-ichi Kani, Jun Terada, Shigeru Kuwano (NTT), Hiroki Ago, Kenji Kawahara (Kyushu Univ.), Katsumi Iwatsuki, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2014-100 |
We experimentally investigated the photomixing function in the millimeter wave range by using InGaAs channel high electr... [more] |
ED2014-100 pp.9-13 |
ED, MW |
2014-01-17 13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A design method of the full-waveguide-band MMIC mixer for 90-140 GHz Hiroshi Hamada, Toshihiko Kosugi, Hideaki Matsuzaki, Hiroki Sugiyama, Hideyuki Nosaka (NTT) ED2013-129 MW2013-194 |
MMIC mixer circuit for the full-waveguide-band spectrum analysis in 90-140 GHz will be reported. We designed the drain-i... [more] |
ED2013-129 MW2013-194 pp.109-113 |
ED, MW |
2012-01-12 10:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Low-Turn-on-Voltage Double Heterojunction Bipolar Transistors with a Narrow-Band-Gap InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition Takuya Hoshi, Hiroki Sugiyama, Haruki Yokoyama, Kenji Kurishima, Minoru Ida (NTT) ED2011-130 MW2011-153 |
Because of the significant increase of data traffic, there is now a strong demand for reducing the power consumptions of... [more] |
ED2011-130 MW2011-153 pp.63-68 |
ED |
2011-12-14 15:50 |
Miyagi |
Tohoku University |
A 140-GHz Receiver Array IC and Sub-Assembly for Passive Imaging System
-- Development of Compact Passive Imaging System -- Toshihiko Kosugi, Hiroki Sugiyama, Hideaki Matsuzaki, Koichi Murata (NTT Photonics Lab.) ED2011-105 |
[more] |
ED2011-105 pp.31-34 |
ED |
2010-12-16 14:10 |
Miyagi |
Tohoku University (Research Institute of Electrical Communication) |
Transit Time Reduction with Graded Emitter in Resonant Tunneling Diode Terahertz Oscillators Atsushi Teranishi, Safumi Suzuki, Kaoru Shizuno, Masahiro Asada (Tokyo Tech), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2010-159 |
We fabricated terahertz oscillators using GaInAs/AlAs double-barrier resonant tunneling diodes with graded emitters on I... [more] |
ED2010-159 pp.7-12 |
ED, SDM |
2010-06-30 16:10 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doped structures Safumi Suzuki, Kiyohito Sawada, Atsushi Teranishi, Masahiro Asada (Tokyo Inst. of Tech.), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2010-61 SDM2010-62 |
We demonstrate fundamental oscillations at around 900 GHz with low bias voltages in resonant tunnelling diodes (RTDs) ha... [more] |
ED2010-61 SDM2010-62 pp.47-48 |
ED |
2009-11-29 15:55 |
Osaka |
Osaka Science & Technology Center |
High Breakdown Voltage InP HEMT 125GHz, 140mW MW Power Amplifier
-- Development of 120GHz Broadband Wireless System -- Toshihiko Kosugi, Hiroki Sugiyama (NTT PH Lab.), Akihiko Hirata, Naoya Kukutsu, Hiroyuki Takahashi (NTT MI Lab.), Koichi Murata (NTT PH Lab.) ED2009-164 |
[more] |
ED2009-164 pp.25-30 |
ED |
2009-11-30 09:00 |
Osaka |
Osaka Science & Technology Center |
Resonant Tunneling Diode Terahertz (0.8-0.9THz) Oscillators with Spike Doping for Low Voltage Operation Kiyohito Sawada, Safumi Suzuki, Atsushi Teranishi, Masato Shiraishi, Masahiro Asada (Tokyo Tech.), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2009-166 |
We demonstrate fundamental oscillations at around 900 GHz with low bias voltages in resonant tunneling diodes (RTDs) hav... [more] |
ED2009-166 pp.37-40 |