Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
OME, SDM |
2024-04-20 16:10 |
Kagoshima |
AMA Home Plaza |
[Invited Talk]
Ultra-fast Etching of Organic Thin-Films by Atmospheric Pressure Reactive Thermal Plasma Jet Seiichiro Higashi, Kyohei Matsumoto, Hiroaki Hanafusa (Hiroshima Univ.) SDM2024-6 OME2024-6 |
[more] |
SDM2024-6 OME2024-6 pp.20-23 |
SDM, OME |
2023-04-22 16:10 |
Okinawa |
Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
Development of wafer temperature measurement system for non-contact temperature measurement during plasma process Ryunosuke Goto, Kenshiro Horiuchi, Jiawen Yu, Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.) SDM2023-17 OME2023-17 |
[more] |
SDM2023-17 OME2023-17 pp.63-66 |
OME, SDM |
2022-04-23 09:30 |
Miyazaki |
Takachiho Hall (Primary: On-site, Secondary: Online) |
3-Dimensional Imaging for Transient Thermal Diffusion in Silicon Wafer by Optical Interference Contactless Thermometry (OICT) Kotaro Matsuguchi, Keiya Fujimoto, Yu Jiawen, Hiroaki Hanafusa, Takuma Sato, Seiichiro Higashi (Hiroshima Univ.) SDM2022-8 OME2022-8 |
[more] |
SDM2022-8 OME2022-8 pp.39-42 |
SDM, OME |
2021-04-23 14:40 |
Okinawa |
Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
[Invited Talk]
Ultra-rapid Crystallization of Amorphous Germanium Films by Atmospheric Pressure Micro-Thermal Plasma Jet and Investigation on their Electrical Characteristics Seiichiro Higashi (Hiroshima Univ.) |
[more] |
|
OME |
2020-12-25 13:40 |
Okinawa |
Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
Measurement of Transient Temperature Change Process inside Silicon Wafer using Optical-Interference Contactless Thermometer(OICT) Yuya Urasaki, Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ) |
Optical-Interference Contactless Thermometer(OICT), which was originally developed by our laboratory, is a temperature m... [more] |
|
SDM, OME |
2020-04-13 15:50 |
Okinawa |
Okinawaken Seinen Kaikan (Cancelled, technical report was not issued) |
[Invited Talk]
Atmospheric Pressure Thermal Plasma Jet Crystallization and Electrical Characteristics of Phosphorus-doped Germanium Films on Insulator Seiichiro Higashi (Hiroshima Univ.) |
[more] |
|
OME |
2017-12-01 14:50 |
Saga |
Sun Messe Tosu |
[Invited Talk]
Single-crystalline Silicon Layer Transfer Technique Utilizing Meniscus Force and Its Application to CMOS Device Fabrication on Plastic Substrate Seiichiro Higashi (Hiroshima Univ.) OME2017-46 |
[more] |
OME2017-46 pp.53-57 |
OME, SDM |
2017-04-21 10:25 |
Kagoshima |
Tatsugochou Shougaigakushuu Center |
Thermal-Plasma-Jet Crystallization of Amorphous Silicon Films on Flexible Glass Substrate Using Rotation Stage Wataru Nakano, Tatsuki Hieda, Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.) |
[more] |
|
SDM, OME |
2016-04-08 16:25 |
Okinawa |
Okinawa Prefectural Museum & Art Museum |
Electrical Characterization of Germanium films Crystallized by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation and Fabrication of High-Performance Thin Film Transistors. Taichi Nakatani, Hiromu Harada, Seiichiro Higashi (Hiroshima Univ.) SDM2016-9 OME2016-9 |
We investigated the electrical properties of the crystalline germanium films crystallized by μ-TPJ irradiation. High spe... [more] |
SDM2016-9 OME2016-9 pp.35-38 |
OME, SDM |
2015-04-30 13:00 |
Okinawa |
Oh-hama Nobumoto Memorial Hall |
Grain Growth Control by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation on Amorphous Silicon Strips and High-Speed Operation of CMOS Circuit Seiji Morisaki, Shohei Hayashi, Shogo Yamamoto, Taichi Nakatani, Seiichiro Higashi (Hiroshima Univ.) SDM2015-13 OME2015-13 |
The formation or random grain boundaries was successfully suppressed using grain growth control of high-speed lateral cr... [more] |
SDM2015-13 OME2015-13 pp.49-52 |
SDM |
2014-06-19 11:25 |
Aichi |
VBL, Nagoya Univ. |
Efficient Activation of As+ Ion implantation into Ge substrate for Formation of Low-Resistive Shallow Junction Shinya Hamada, Hideki Murakami, Takahiro Ono, Kuniaki Hashimoto (Hiroshima Univ.), Akio Ohta (Nagoya Univ.), Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2014-48 |
To improve the activation of As implanted into Ge substrate, we have studied the impact of substrate temperature on As+ ... [more] |
SDM2014-48 pp.27-30 |
SDM, OME |
2014-04-10 14:10 |
Okinawa |
Okinawa-Ken-Seinen-Kaikan Bldg. |
[Invited Talk]
Single-crystalline Silicon Layer Transfer Technique Utilizing Meniscus Force and Its Application to Device Fabrication Seiichiro Higashi, Kohei Sakaike, Muneki Akazawa, Shogo Nakamura (Hiroshima Univ.) SDM2014-3 OME2014-3 |
[more] |
SDM2014-3 OME2014-3 pp.11-16 |
SDM |
2013-06-18 14:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes Akio Ohta (Hiroshima Univ.), Motoki Fukusima, Katsunori Makihara (Nagoya Univ.), Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2013-56 |
[more] |
SDM2013-56 pp.61-66 |
SDM, ED (Workshop) |
2012-06-27 18:00 |
Okinawa |
Okinawa Seinen-kaikan |
Improvement of Low-Temperature-Deposited SiO2 and Si/SiO2 interface Properties by Thermal-Plasma-Jet Annealing and Heat Treatment in High-Pressure H2O Vapor Shunki Koyanagi, Shohei Hayashi, Tsubasa Mizuno, Kouhei Sakaike, Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.) |
[more] |
|
SDM, ED (Workshop) |
2012-06-28 08:45 |
Okinawa |
Okinawa Seinen-kaikan |
Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior Akio Ohta (Hiroshima Univ.), Katsunori Makihara (Nagoya Univ.), Mitsuhisa Ikeda, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) |
[more] |
|
SDM, ED (Workshop) |
2012-06-28 09:45 |
Okinawa |
Okinawa Seinen-kaikan |
Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer Kuniaki Hashimoto, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) |
[more] |
|
SDM |
2012-06-21 11:15 |
Aichi |
VBL, Nagoya Univ. |
Interface Reaction Control of HfO2/Ge structure by an Insertion of TaOx layer Hideki Murakami, Kento Mishima, Akio Ohta, Kuniaki Hashimoto, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2012-49 |
[more] |
SDM2012-49 pp.33-36 |
SDM |
2012-06-21 13:55 |
Aichi |
VBL, Nagoya Univ. |
Control of Schottky Barrier Height at Al/Ge Junctions by Ultrathin Layer Insertion Akio Ohta, Masafumi Matsui, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2012-53 |
[more] |
SDM2012-53 pp.53-58 |
SDM |
2012-06-21 14:45 |
Aichi |
VBL, Nagoya Univ. |
Chemical Analysis of As+-implanted Ge(100) Takahiro Ono, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2012-55 |
[more] |
SDM2012-55 pp.63-67 |
SDM, OME |
2012-04-28 10:20 |
Okinawa |
Okinawa-Ken-Seinen-Kaikan Bldg. |
Epitaxial Growth of Silicon Films on Porous Silicon Underlayer by Micro-Thermal-Plasma-Jet Irradiation Shohei Hayashi, Ryohei Matsubara, Yuji Fujita, Mitsuhisa Ikeda, Seiichiro Higashi (Hiroshima Univ.) SDM2012-14 OME2012-14 |
Amorphous silicon (a-Si) film on porous silicon (PS) underlayer were melted and rapid solidification was induced by micr... [more] |
SDM2012-14 OME2012-14 pp.63-66 |