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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2017-11-09
13:30		 Tokyo Kikai-Shinko-Kaikan Bldg. (Tokyo) [Invited Talk] Impurity Diffusion Modeling in SiC
Masashi Uematsu (Keio Univ.) SDM2017-64		 SiC is an attractive material for the application of high-power electronic devices. In this article, the current status ... [more] SDM2017-64
pp.15-20
SDM 2015-11-05
10:00		 Tokyo Kikai-Shinko-Kaikan Bldg. (Tokyo) [Invited Talk] Current Status of Impurity Diffusion Modeling in Semiconductors
Masashi Uematsu (Keio Univ.) SDM2015-84		 With the scaledown of CMOS devices, it is crucial to establish a diffusion model to accurately predict impurity diffusio... [more] SDM2015-84
pp.1-6
SDM 2013-11-14
10:50		 Tokyo Kikai-Shinko-Kaikan Bldg. (Tokyo) [Invited Talk] 2013 SISPAD Review -- Workshop 1 --
Masashi Uematsu (Keio Univ.) SDM2013-100		 A workshop entitled "Modeling of Reliability and Degradation of Nanoelectronic Devices" was held on September 2, 2013 in... [more] SDM2013-100
pp.5-8
SDM 2012-11-16
11:15		 Tokyo Kikai-Shinko-Kaikan Bldg (Tokyo) Impact of Discrete Dopant in Characteristics of Nanowire Transistors -- KMC and NEGF Study --
Nobuya Mori (Osaka Univ.), Masashi Uematsu (Keio Univ.), Hideki Minari, Gennady Mil'nikov (Osaka Univ.), Kohei M. Itoh (Keio Univ.) SDM2012-107		 Impacts of discrete dopant in source and drain extensions on characteristics of silicon nanowire transistors have been n... [more] SDM2012-107
pp.43-46
SDM 2009-06-19
10:20		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo (Tokyo) First-Principles Calculations for Interfacial Reaction during Si Oxidation
Toru Akiyama (Mie Univ.), Hiroyuki Kageshima (NTT Corp.), Masashi Uematsu (Keio Univ.), Tomonori Ito (Mie Univ.) SDM2009-28		 The interfacial reaction processes during Si oxidation are investigated based on first-principles total-energy electroni... [more] SDM2009-28
pp.9-13
SDM 2006-06-22
13:10		 Hiroshima Faculty Club, Hiroshima Univ. (Hiroshima) Interfacial reaction in HfO2/SiO2/Si(001) during O2 anneal observed by high-resolution RBS
Zhao Ming, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura (Kyoto Univ.), Masashi Uematsu (NTT BRL), Kazuyoshi Torii, Satoshi Kamiyama, Yasuo Nara (Selete), Keisaku Yamada (Waseda Univ.) 		 [more] SDM2006-59
pp.99-102
 Results 1 - 6 of 6  /   
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