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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2022-11-11 09:30 |
Online | Online | [Invited Talk]
Toward Super Temporal Resolution by Suppression of Mixing Effects of Electrons Takeharu Goji Etoh (Osaka Univ.), Kazuhiro Shimonomura, Taeko Ando, Yoshiyuki Matsunaga, Yutaka Hirose (Ritsumeikan Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.), Yoshinari Kamakura (OIT), Hideki Mutoh (Link Research)  SDM2022-71 |
The theoretical temporal resolution limit of silicon (Si) image sensors is 11.1 ps. The super temporal resolution (STR) ... [more] | SDM2022-71 pp.32-39 |
| SDM | 2015-11-05 11:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Analysis of Ultra-High-Speed Image Sensor with Monte Carlo Simulation Natsumi Minamitani (Osaka Univ.), Vu Truon Son Dao, Kazuhiro Shimonomura, Takeharu Goji Etoh (Ritsumeikan Univ.), Yoshinari Kamakura, Nobuya Mori (Osaka Univ.) SDM2015-86 |
We computationally investigate the fundamental properties of electron transport in the backside-illuminated CCD image se... [more] | SDM2015-86 pp.13-17 |
| BioX, ITE-ME, ITE-IST | 2015-06-29 11:00 |
Ishikawa | Kanazawa University, Kakuma Campus | A pico-second burst imaging camera Takeharu G. Etoh (Ritsmeikan Univ.), Hiroyuki Shiraga (Osaka Univ.) |
[more] | |
| ICD, ITE-IST | 2014-07-03 13:30 |
Shimane | Izumo-shi (Shimane) | Analysis of ultra-fast image sensor with Monte Carlo device simulation technique Yoshinari Kamakura (Osaka Univ.), Kazuhiro Shimonomura, Takeharu G. Etoh (Ritsumeikan Univ.) ICD2014-23 |
[more] | ICD2014-23 pp.23-27 |
| SIP, CAS, VLD | 2009-07-02 13:50 |
Hokkaido | Kushiko-shi Shogai Gakushu Center | Measured Data Evaluations for Both Behaviors of MOSFET and Lateral BJT Based on High Breakdown Voltage SOI-CMOS Process using Asymmetric LDD structure Takashi Hamahata (Kinki Univ.), Toshiaki Koike-Akino (Harvard Univ.), Toshiro Akino, T. Goji Etoh (Kinki Univ.) CAS2009-19 VLD2009-24 SIP2009-36 |
This paper describes that, being based on 0.6um SOI-CMOS process of X-FAB having an MOSFET structure with a high breakdo... [more] | CAS2009-19 VLD2009-24 SIP2009-36 pp.103-108 |
| VLD, CAS, SIP | 2008-06-26 15:25 |
Hokkaido | Hokkaido Univ. | Power Supply Chip for CCD in Ultra-High-Speed Camera Based on 1.2um CMOS/SOI Process with High Breakdown Voltage Masatoshi Kobayashi, Toshiro Akino (Kinki Univ.), Kenji Nishi (Kinki Univ. Tech. of Collage), Kousei Takehara, Takeharu Etoh (Kinki Univ.) CAS2008-15 VLD2008-28 SIP2008-49 |
[more] | CAS2008-15 VLD2008-28 SIP2008-49 pp.81-86 |
| VLD, CAS, SIP | 2008-06-26 15:45 |
Hokkaido | Hokkaido Univ. | A Lateral Unified-CBiCMOS Buffer Circuit for High Speed and Low Energy Based on 0.18μm CMOS/SOI Process Takashi Hamahata, Satoshi Uto, Toshiro Akino (Kinki Univ.), Kenji Nishi (Kinki Univ. Tech of Collage), Kousei Takehara, Takeharu Etoh (Kinki Univ.) CAS2008-16 VLD2008-29 SIP2008-50 |
In this paper, we develop a printed circuit board having a discrete device that can drive a CCD chip with 5 nF maximum l... [more] | CAS2008-16 VLD2008-29 SIP2008-50 pp.87-92 |
| CAS, SIP, VLD | 2007-06-22 10:30 |
Hokkaido | Hokkaido Tokai Univ. （Sapporo) | A Lateral Unified-CBiCMOS Buffer Circuit for Driving 5nF Maximum Load Capacitance per CCD Clock Masatoshi Kobayashi, Takashi Hamahata, Toshiro Akino, Kenji Nishi, Cuong Vo Le, Kousei Takehara, T. Goji Etoh (Kinki Univ.) CAS2007-22 VLD2007-38 SIP2007-52 |
Since 2001, we have been developing an in-situ storage image sensor (ISIS) that captures 100 to 150 consecutive images a... [more] | CAS2007-22 VLD2007-38 SIP2007-52 pp.19-24 |
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