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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2022-01-31 13:45 |
Online |
Online |
[Invited Talk]
Single-digit-nanometer magnetic tunnel junction technology for high-capacity STT-MRAM Butsurin Jinnai, Junta Igarashi, Takanobu Shinoda, Kyota Watanabe, Takuya Funatsu, Hideo Sato, Shunsuke Fukami, Hideo Ohno (Tohoku Univ.) SDM2021-69 |
[more] |
SDM2021-69 pp.5-8 |
MSS, NLP (Joint) |
2020-03-09 15:20 |
Aichi |
(Cancelled but technical report was issued) |
A Mathematical Model for a Synapse Device Based on Spintronics Taku Sato, Kikuchi Yushi, Aleksandr Kurenkov, Yoshihiko Horio, Shunsuke Fukami (Tohoku Univ.) NLP2019-122 |
Recently, there is an increasing interest in a Spiking Neural Network (SNN) and Spike-Timing Dependent Plasticity (STDP)... [more] |
NLP2019-122 pp.55-60 |
NLP, NC (Joint) |
2020-01-25 10:30 |
Okinawa |
Miyakojima Marine Terminal |
Mathematical modeling of spintronics neuron device based on thermal dynamics Yushi Kikuchi, Taku Sato, Aleksandr Kurenkov, Yoshihiko Horio, Shunsuke Fukami (TU) NLP2019-104 |
Spintronics device has been shown to reproduce some functionalities of synapse (i.e. spike-timing-dependent plasticity) ... [more] |
NLP2019-104 pp.99-104 |
MRIS, ITE-MMS |
2017-10-19 13:45 |
Niigata |
Kashiwazaki energy hall, Niigata |
[Invited Talk]
Analog spintronics devices and its application to artificial neural networks Hisanao Akima, William Borders, Shunsuke Fukami, Satoshi Moriya, Shouta Kurihara, Aleksandr Kurenkov, Yoshihiko Horio, Shigeo Sato, Hideo Ohno (Tohoku Univ.) MR2017-18 |
Developing dedicated integrated circuits operating with low power consumption is indispensable to realize a large scale ... [more] |
MR2017-18 pp.7-12 |
MBE, NC (Joint) |
2017-03-13 14:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Autoassociative Memory System Using Analogue Magnetic Memory Device Shouta Kurihara, Hisanao Akima, William A. Borders, Shunsuke Fukami, Satoshi Moriya, Aleksandr Kurenkov, Ryota Shimohashi, Yoshihiko Horio, Shigeo Sato, Hideo Ohno (Tohoku Univ.) NC2016-85 |
[more] |
NC2016-85 pp.127-132 |
ICD, SDM, ITE-IST [detail] |
2016-08-03 11:25 |
Osaka |
Central Electric Club |
[Invited Talk]
A Three-Terminal Spin-Orbit Torque Switching Magnetic Memory Device
-- Toward Realization of High-Speed and Low-Power Nonvolatile Integrated Circuits -- Shunsuke Fukami, Tetsuro Anekawa, Ayato Ohkawara, Chaoliang Zhang, Hideo Ohno (Tohoku Univ.) SDM2016-63 ICD2016-31 |
Integrated circuits with non-volatile spintronics memory devices open up new pathways toward ultralow-power and high-per... [more] |
SDM2016-63 ICD2016-31 pp.99-103 |
ICD, SDM |
2014-08-04 14:55 |
Hokkaido |
Hokkaido Univ., Multimedia Education Bldg. |
[Invited Talk]
A 90-nm Three-terminal MRAM Embedded Nonvolatile Microcontroller for Standby-Power-Critical Applications Noboru Sakimura, Yukihide Tsuji, Ryusuke Nebashi, Hiroaki Honjo, Ayuka Morioka, Kunihiko Ishihara (NEC), Keizo Kinoshita, Shunsuke Fukami (Tohoku Univ.), Sadahiko Miura (NEC), Naoki Kasai, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu (Tohoku Univ.), Tadahiko Sugibayashi (NEC) SDM2014-69 ICD2014-38 |
[more] |
SDM2014-69 ICD2014-38 pp.39-44 |
ICD |
2013-04-11 16:20 |
Ibaraki |
Advanced Industrial Science and Technology (AIST) |
Highly Reliable Logic Primitive Gates for Spintronics-Based Logic LSI Yukihide Tsuji, Ryusuke Nebashi, Noboru Sakimura, Ayuka Morioka, Hiroaki Honjo, Keiichi Tokutome, Sadahiko Miura (NEC), Tetsuhiro Suzuki (Renesas Electronics Corp.), Shunsuke Fukami, Keizo Kinoshita, Takahiro Hanyu, Tetsuo Endoh, Naoki Kasai, Hideo Ohno (Tohoku Univ.), Tadahiko Sugibayashi (NEC) ICD2013-9 |
Implementing redundancy within a Spintronis Primitive Gata (SPG) using multi-terminal DWM cells ensures high reliability... [more] |
ICD2013-9 pp.41-46 |
ICD |
2012-04-24 10:50 |
Iwate |
Seion-so, Tsunagi Hot Spring (Iwate) |
A Non-Volatile Content Addressable Memory Using Three-Terminal Magnetic Domain Wall Motion Cells Ryusuke Nebashi, Noboru Sakimura, Yukihide Tsuji (NEC), Shunsuke Fukami (Tohoku Univ.), Hiroaki Honjo, Shinsaku Saito, Sadahiko Miura, Nobuyuki Ishiwata (NEC), Keizo Kinoshita, Takahiro Hanyu, Tetsuo Endoh, Naoki Kasai, Hideo Ohno (Tohoku Univ.), Tadahiko Sugibayashi (NEC) ICD2012-10 |
A 5-ns search operation of a non-volatile content addressable memory was demonstrated. The CAM macro, with a capacity of... [more] |
ICD2012-10 pp.49-54 |
ICD, SDM |
2009-07-17 14:10 |
Tokyo |
Tokyo Institute of Technology |
Low Current Perpendicular Domain Wall Motion Cell for Scalable High-Speed MRAM Shunsuke Fukami, Tetsuhiro Suzuki, Kiyokazu Nagahara, Norikazu Ohshima (NEC Corp.), Yasuaki Ozaki (NECEL Corp.), Shinsaku Saito, Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Kaoru Mori, Chuji Igarashi, Sadahiko Miura, Nobuyuki Ishiwata, Tadahiko Sugibayashi (NEC Corp.) SDM2009-114 ICD2009-30 |
We have developed a new magnetic random access memory with current-induced domain wall motion (DW-motion MRAM) using per... [more] |
SDM2009-114 ICD2009-30 pp.91-95 |
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