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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 41  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MWPTHz 2022-12-19
15:25
Miyagi   Admittance spectroscopy of triple-barrier resonant tunneling diodes for extraction of quantum transport parameters.
Takeshi Makino, Michihiko Suhara (TMU), Kiyoto Asakawa (TMCIT), Issei Watanabe, Koichi Akahane (NICT) ED2022-75 MWPTHz2022-46
Triple-barrier resonant tunneling diodes (TBRTDs) consisting of InGaAs/InAs/InAlAs heterostructures fabricated by low-te... [more] ED2022-75 MWPTHz2022-46
pp.19-22
MWPTHz, EST, MW, EMT, OPE, IEE-EMT [detail] 2022-07-19
16:35
Hokkaido Asahikawa Civic Culture Hall
(Primary: On-site, Secondary: Online)
Transmission of 120GHz-band RF Signal by Contacting Another Dielectric Sheet
Akihiko Hirata, Masaki Ushio (CIT), Issei Watanabe, Norihiko Sekine, Akifumi Kasamatsu (NICT) EMT2022-30 MW2022-54 OPE2022-33 EST2022-31 MWPTHz2022-28
Currently, sheet LAN, which enables LAN connection simply by placing a terminal on a dielectric sheet that transmits ter... [more] EMT2022-30 MW2022-54 OPE2022-33 EST2022-31 MWPTHz2022-28
pp.109-112
AP 2022-06-16
13:50
Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)
Millimeter-wave band parabolic antenna using microstrip antenna as primary radiator placed on RF-IC substrate
Yasuaki Kanda, Masayuki Nakajima, Kuniaki Sutou (Antenna Giken), Watanabe issei (NICT), Masazumi Ishikawa (Antenna Giken) AP2022-31
(To be available after the conference date) [more] AP2022-31
pp.13-16
MW 2022-03-04
10:30
Online Online Electromagnetic-wave-absorber design based on terahertz-band measurement results of dielectrics
Sangyeop Lee (TokyoTech), Masao Fujita, Masayuki Toyoda (Maxell Ltd.), Kyoya Takano (TUS), Shinsuke Hara, Issei Watanabe, Akifumi Kasamatsu (NICT), Hiroyuki Ito (TokyoTech) MW2021-132
 [more] MW2021-132
pp.117-121
ED, THz 2021-12-21
10:20
Miyagi
(Primary: On-site, Secondary: Online)
Device Performances and Delay Time Analysis of GaInSb-Channel HEMTs Scaled to Epitaxial Structures
Yuuto Isomae, Naoyuki Kishimoto, Takuya Hayashi, Munemasa Kunisawa (TUS), Issei Watanabe, Yoshimi Yamashita, Ryuto Machida, Shinsuke Hara, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2021-57
We fabricated three-types of Al0.40In0.60Sb/Ga0.22In0.78Sb-HEMTs using epitaxial heterostructures in which the channel l... [more] ED2021-57
pp.44-47
AP, SANE, SAT
(Joint)
2021-07-30
14:05
Online Online [Invited Lecture] Propagation study of 300 GHz band front hall wireless link for Beyond 5G
AKihiko Hirata (CIT), Katsumi Fujii, Issei Watanabe, Norihiko Sekine, Akifumi Kasamatsu (NICT) AP2021-44
Recently, research and development of Beyond 5G mobile network systems has been activated. In Beyond 5G mobile network s... [more] AP2021-44
pp.115-119
OPE, MW, IEE-EMT, MWP, EST, EMT, THz [detail] 2021-07-15
16:00
Online Online Dependence of Alignment on the transmission control of 120-GHz-band SRR bandstop filter by contacting Lattice Pattern
Akihiko Hirata (CIT), Issei Wanatabe, Norihiko Sekine, Akifumi Kasamatsu (NICT) EMT2021-16 MW2021-21 OPE2021-10 EST2021-17 MWP2021-18
Terahertz (THz)-band close-proximity wireless link can achieve instantaneous transfer of large amounts of data, however,... [more] EMT2021-16 MW2021-21 OPE2021-10 EST2021-17 MWP2021-18
pp.50-53
MWP 2021-05-26
15:10
Online Online Complex dielectric constant measurement of glass at 200-500 GHz by THz-TDS and VNA
Akihiko Hirata, Koji Suizu (CIT), Issei Watanabe, Norihiko Sekine, Akifumi Kasamatsu (NICT) MWP2021-3
(To be available after the conference date) [more] MWP2021-3
pp.10-13
MWP 2020-05-28
15:55
Online Online Transmission control of 120-GHz-band SRR bandstop filter
Akihiko Hirata, Koichiro Itakura (CIT), Takashi Tomura, Jiro Hirokawa (TITECH), Issei Watanabe, Norihiko Sekine, Akifumi Kasamatsu (NICT) MWP2020-5
 [more] MWP2020-5
pp.23-26
ED, MW 2020-01-31
16:35
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Research and development of compound semiconductor electron devices and high-frequency measurement technologies for millimeter- and submillimeter-wave wireless communications
Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT) ED2019-105 MW2019-139
Compound semiconductor electron devices such as GaN-based high electron mobility transistors (HEMTs) have been expected ... [more] ED2019-105 MW2019-139
pp.59-64
ED, THz [detail] 2019-12-23
16:45
Miyagi   GaInSb n-Channel HEMTs Using Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer
Koki Osawa, Takuya Iwaki, Yuki Endoh, Mizuho Hiraoka, Naoyuki Kishimoto, Takuya Hayashi (TUS), Issei Watanabe (NICT/TUS), Yoshimi Yamashita, Shinsuke Hara, Takahiro Gotow, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2019-83
We succeeded in fabricating GaInSb n-channel HEMTs for the first time in the world and measured their characteristics. W... [more] ED2019-83
pp.29-32
MWP 2019-11-27
13:55
Tokyo Kikai-Shinko-Kaikan Bldg. Measurement of 4 x 4 planar slot array antenna near-field pattern
Akihiko Hirata (CIT), Yusuke Tanaka, Shintaro Hisatake (Gifu Univ.), Jiro Hirokawa (TITEC), Issei Watanabe, Norihiko Sekine, Akifumi Kasamatsu (NICT) MWP2019-43
 [more] MWP2019-43
pp.5-8
ED, THz 2018-12-18
09:00
Miyagi RIEC, Tohoku Univ. [Invited Talk] High-Speed Performance of InP-, Sb- and GaN-based HEMTs
Akira Endoh, Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT), Hiroki Fujishiro (Tokyo Univ. of Science), Takashi Mimura (NICT) ED2018-62
We have fabricated nanometer-scale InP-, Sb- and GaN-based HEMTs by using electron beam lithography and measured their c... [more] ED2018-62
pp.35-38
ED, MW 2018-01-25
15:45
Tokyo Kikai-Shinko-Kaikan Bldg. Delay Time Analysis of InAlN-MIS-HEMTs on Si Substrates
Tomohiro Yoshida (SEI), Isao Makabe (NICT), Isao Makabe (SEI), Issei Watanabe, Akifumi Kasamatsu (NICT), Ken Nakata, Kazutaka Inoue (SEI) ED2017-94 MW2017-163
 [more] ED2017-94 MW2017-163
pp.7-10
ED, THz 2017-12-18
17:10
Miyagi RIEC, Tohoku Univ Preliminary study on terahertz waveguide-based modulation using photoinduced carriers
Taito Shimanuki (Keio), Issei Watanabe, Akifumi Kasamatsu (NICT), Toshiyuki Tanaka, Yasuaki Monnai (Keio) ED2017-80
We study a method of modulating terahertz waves by changing a conductivity of a high-resistivity silicon crystal with ph... [more] ED2017-80
pp.29-32
ED, THz 2017-12-19
09:00
Miyagi RIEC, Tohoku Univ [Invited Talk] Development of Antimonide-Based Transistors
Hiroki Fujishiro, Kyosuke Isono, Takuto Takahashi, Yoshiaki Harada, Naoki Oka, Jun Takeuchi, Yui Fujisawa (TUS), Sachie Fujikawa (Tokyo Denki Univ.), Ryuto Machida (TUS), Issei Watanabe, Yoshimi Yamashita, Akira Endoh, Shinsuke Hara, Akifumi Kasamatsu (NICT) ED2017-81
Quantum corrected Monte Carlo simulation shows that the InSb HEMT exhibits intrinsic fT more than 1 THz from Vds of arou... [more] ED2017-81
pp.33-36
ED, THz 2017-12-19
09:40
Miyagi RIEC, Tohoku Univ Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Composite Channel HEMTs
Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujitsu Labs.) ED2017-82
We fabricated In0.7Ga0.3As/InAs/In0.7Ga0.3As and In0.7Ga0.3As channel HEMTs and measured their DC and RF characteristics... [more] ED2017-82
pp.37-40
ED 2016-12-19
14:40
Miyagi RIEC, Tohoku Univ Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs
Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2016-81
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain... [more] ED2016-81
pp.7-12
ED 2016-12-20
13:15
Miyagi RIEC, Tohoku Univ [Invited Talk] Input Power Optimization of a Tripler-Base 300-GHz CMOS Up-Conversion Mixer
Ruibing Dong (NICT), Kosuke Katayama (Hiroshima Univ.), Shinsuke Hara (NICT), Kyoya Takano (Hiroshima Univ.), Issei Watanabe, Norihiko Sekine, Akifumi Kasamatsu (NICT), Takeshi Yoshida, Shuhei Amakawa, Minoru Fujishima (Hiroshima Univ.) ED2016-93
A tripler-based 300-GHz-band up-conversion mixer in 40-nm CMOS is experimentally characterized, whose operating frequenc... [more] ED2016-93
pp.71-74
LQE, OPE, OCS 2016-10-28
14:25
Miyazaki Miyazaki Citizen's Plaza Integrated Semiconductor Optical-to-Terahertz Signal Converter -- Toward Seamless Connection between Optical and Terahertz Communication --
Satoshi Yamasaki, Akio Yasui, Tomohiro Amemiya (Titech), Kentaro Furusaswa, Shinsuke Hara, Issei Watanabe, Atsuchi Kanno, Norihiko Sekine (NICT), Zhichen Gu, Nobuhiko Nishiyama (Titech), Akifumi Kasamatsu (NICT), Shigehisa Arai (Titech) OCS2016-54 OPE2016-95 LQE2016-70
(Advance abstract in Japanese is available) [more] OCS2016-54 OPE2016-95 LQE2016-70
pp.109-114
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