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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2016-04-14
14:50
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] A Triple-Protection Structured COB FRAM with 1.2-V Operation and 1E17-Cycle Endurance
Hitoshi Saito, Ko Nakamura, Soichiro Ozawa, Naoya Sashida, Satoru Mihara, Yukinobu Hikosaka, Wensheng Wang, Tomoyuki Hori, Kazuaki Takai, Mitsuharu Nakazawa, Noboru Kosugi, Makoto Hamada, Shoichiro Kawashima, Takashi Eshita, Masato Matsumiya (FSL) ICD2016-9
We have developed a ferroelectric RAM (FRAM) with a low operation voltage of 1.2 V and a high switching endurance up to ... [more] ICD2016-9
pp.45-49
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