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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, OPE, CPM, EMD, R 2023-08-24
15:50
Miyagi Tohoku university
(Primary: On-site, Secondary: Online)
[Invited Talk] Growth and applications of nitride semiconductors on h-BN
Yasuyuki Kobayashi (Hirosaki Univ.), Masanobu Hiroki, Kazuhide Kumakura (NTT Basic Research Lab.) R2023-24 EMD2023-19 CPM2023-29 OPE2023-68 LQE2023-15
We have successfully demonstrated that nitride semiconductors were grown on 3-nm-thick hexagonal boron nitride (h-BN) la... [more] R2023-24 EMD2023-19 CPM2023-29 OPE2023-68 LQE2023-15
pp.42-44
ED, LQE, CPM 2012-11-29
10:25
Osaka Osaka City University Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto (NTT) ED2012-66 CPM2012-123 LQE2012-94
Nitride semiconductors are the preferential choice in various devices applications, such as optoelectronics and high-pow... [more] ED2012-66 CPM2012-123 LQE2012-94
p.7
LQE, ED, CPM 2005-10-13
14:10
Shiga Ritsumeikan Univ. Pnp AlGaN/GaN HBTs operated under high-temperature and high-power
Kazuhide Kumakura, Toshiki Makimoto (NTT Basic Research Labs.)
 [more] ED2005-128 CPM2005-115 LQE2005-55
pp.47-50
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