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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
LQE, OPE, CPM, EMD, R |
2023-08-24 15:50 |
Miyagi |
Tohoku university (Primary: On-site, Secondary: Online) |
[Invited Talk]
Growth and applications of nitride semiconductors on h-BN Yasuyuki Kobayashi (Hirosaki Univ.), Masanobu Hiroki, Kazuhide Kumakura (NTT Basic Research Lab.) R2023-24 EMD2023-19 CPM2023-29 OPE2023-68 LQE2023-15 |
We have successfully demonstrated that nitride semiconductors were grown on 3-nm-thick hexagonal boron nitride (h-BN) la... [more] |
R2023-24 EMD2023-19 CPM2023-29 OPE2023-68 LQE2023-15 pp.42-44 |
ED, LQE, CPM |
2012-11-29 10:25 |
Osaka |
Osaka City University |
Layered boron nitride as a release layer for mechanical transfer of GaN-based devices Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto (NTT) ED2012-66 CPM2012-123 LQE2012-94 |
Nitride semiconductors are the preferential choice in various devices applications, such as optoelectronics and high-pow... [more] |
ED2012-66 CPM2012-123 LQE2012-94 p.7 |
LQE, ED, CPM |
2005-10-13 14:10 |
Shiga |
Ritsumeikan Univ. |
Pnp AlGaN/GaN HBTs operated under high-temperature and high-power Kazuhide Kumakura, Toshiki Makimoto (NTT Basic Research Labs.) |
[more] |
ED2005-128 CPM2005-115 LQE2005-55 pp.47-50 |
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