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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2012-11-29
10:25		 Osaka Osaka City University (Osaka) Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto (NTT) ED2012-66 CPM2012-123 LQE2012-94		 Nitride semiconductors are the preferential choice in various devices applications, such as optoelectronics and high-pow... [more] ED2012-66 CPM2012-123 LQE2012-94
p.7
LQE, ED, CPM 2005-10-13
14:10		 Shiga Ritsumeikan Univ. (Shiga) Pnp AlGaN/GaN HBTs operated under high-temperature and high-power
Kazuhide Kumakura, Toshiki Makimoto (NTT Basic Research Labs.) 		 [more] ED2005-128 CPM2005-115 LQE2005-55
pp.47-50
MW, ED 2005-01-18
09:45		 Tokyo (Tokyo) -
Narihiko Maeda, -, Takashi Makimura, Masanobu Hiroki, Toshiki Makimoto, Takashi Kobayashi, Takatomo Enoki (NTT) 		 [more] ED2004-213 MW2004-220
pp.7-12
SCE 2004-10-22
09:25		 Tokyo Kikai-Shinko-Kaikan Bldg. (Tokyo) Measurement of the surface resistance of NBCO thin films and its comparison with YBCO thin films
Yasushi Kodaka, Yoshio Kobayashi (Saitama Univ.), Jose Kurian, Hisashi Sato, Toshiki Makimoto (NTT) 		 [more] SCE2004-25
pp.5-8
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