IEICE Technical Committee Submission System
Conference Schedule		 Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 36  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2017-01-26
14:00		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] GaN Power Transistors on Si Substrates for Switching and High-Frequency Applications
Tetsuzo Ueda, Yasuhiro Uemoto, Hiroyuki Sakai, Tsuyoshi Tanaka (Panasonic), Daisuke Ueda (Kyoto Insutitute of Tech.) ED2016-96 MW2016-172		 GaN transistors have been widely investigated for power deices to be used in various power switching systems. In additio... [more] ED2016-96 MW2016-172
pp.1-5
PRMU, MI, IE, SIP 2015-05-15
11:10		 Mie   [Invited Talk] Healthcare information technology for wellness society
Hideyuki Ban, Shinji Tarumi, Takeshi Tanaka, Yasutaka Hasegawa, Toshinori Miyoshi, Hidekatsu Takada, Takanobu Osaki, Toru Nakagawa (Hitachi), Takuzo Muneshige (Hitachi Kenpo) SIP2015-21 IE2015-21 PRMU2015-21 MI2015-21		  [more] SIP2015-21 IE2015-21 PRMU2015-21 MI2015-21
pp.111-116
CPM, LQE, ED 2013-11-29
16:40		 Osaka   Evaluation of unwanted radiated emission from GaN-HEMT switching circuit
Toshihide Ide, Ryousaku Kaji, Mitsuaki Shimizu (AIST), Kenji Mizutani, Hiroaki Ueno, Nobuyuki Otsuka, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2013-89 CPM2013-148 LQE2013-124		 The radiated emission from the GaN-HEMT switching converter is investigated by two-dimensional electromagnetic-probe sca... [more] ED2013-89 CPM2013-148 LQE2013-124
pp.117-120
MW, ED 2013-01-18
13:00		 Tokyo Kikai-Shinko-Kaikan Bldg. GaN Gate Injection Transistor with Integrated Si Schottky Barrier Diode for High Efficient DC-DC Converters
Shinji Ujita, Tatsuo Morita, Hidekazu Umeda, Yusuke Kinoshita, Satoshi Tamura, Yoshiharu Anda, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2012-122 MW2012-152		 We present a novel GaN-based normally-off transistor with an integrated Si Schottky barrier diode (SBD) for low voltage ... [more] ED2012-122 MW2012-152
pp.53-56
MW, ED 2013-01-18
13:50		 Tokyo Kikai-Shinko-Kaikan Bldg. Effects of Deep Trapping States at High Temperatures on Transient Performances of AlGaN/GaN HFETs
Kenichiro Tanaka, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2012-124 MW2012-154		 Kinetic studies on the current collapse of a normally-off AlGaN/GaN heterostructure field effect transistor under a high... [more] ED2012-124 MW2012-154
pp.63-68
ICD, SDM 2012-08-03
10:05		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido [Invited Talk] A DC-Isolated Gate Drive IC with Drive-by-Microwave Technology
Shuichi Nagai, Noboru Negoro, Takeshi Fukuda, Yasufumi Kawai, Tetsuzo Ueda, Tsuyoshi Tanaka, Nobuyuki Otsuka, Daisuke Ueda (Panasonic) SDM2012-79 ICD2012-47		 We have developed new isolated gate drivers with the Drive-by-Microwave Technology that regenerates the gate signal afte... [more] SDM2012-79 ICD2012-47
pp.89-92
SDM, ED
(Workshop)		 2012-06-29
08:15		 Okinawa Okinawa Seinen-kaikan [Invited Talk] Integrated Design Platform for Power Electronics Applications with GaN Devices
Kenji Mizutani, Hiroaki Ueno, Yuji Kudoh, Shuichi Nagai, Kaoru Inoue, Nobuyuki Otsuka, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) 		 [more]
ED, MW 2012-01-12
14:30		 Tokyo Kikai-Shinko-Kaikan Bldg High current and high voltage GaN-based multi-junction diode with p-type barrier controlling layer
Daisuke Shibata, Kazuhiro Kaibara, Tomohiro Murata, Yasuhiro Yamada, Tatsuo Morita, Yoshiharu Anda, Masahiro Ishida, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2011-137 MW2011-160		  [more] ED2011-137 MW2011-160
pp.101-105
ED, MW 2012-01-12
15:35		 Tokyo Kikai-Shinko-Kaikan Bldg Novel Field Plate Design for High-Power and High-Gain AlGaN/GaN HFETs on Si Substrates
Satoshi Nakazawa, Naohiro Tsurumi, Masaaki Nishijima, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2011-139 MW2011-162		 We demonstrate high power AlGaN/GaN HFETs on Si substrates with output power of 203W with the linear gain of 16.9dB oper... [more] ED2011-139 MW2011-162
pp.111-115
LQE, ED, CPM 2011-11-17
16:05		 Kyoto Katsura Hall，Kyoto Univ. High-accuracy equivalent-circuit-model for GaN-GIT bi-directional switch
Toshihide Ide, Mitsuaki Shimizu, Xu-Qiang Shen (AIST), Tatsuo Morita, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2011-84 CPM2011-133 LQE2011-107		 GaN-Gate Injection Transistor(GIT) Bi-directional Switches (BDSWs) is capable of the low on-resistance operation as comp... [more] ED2011-84 CPM2011-133 LQE2011-107
pp.55-60
LOIS 2011-03-04
13:30		 Okinawa Ishigaki IT business support center Development of a Secure, Cloud-Based Activity Analysis System
Takeshi Tanaka, Ken Kawamoto, Kiyoshi Aiki, Hiroyuki Kuriyama (Hitachi) LOIS2010-90		  [more] LOIS2010-90
pp.149-154
MW, ED 2011-01-14
10:35		 Tokyo Kikai-Shinko-Kaikan Bldg. Boosting of Blocking Voltages in GaN Transistors by Widening Depletion Layer in Si Substrate
Hidekazu Umeda, Asamira Suzuki, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.) ED2010-184 MW2010-144		 We propose a novel structure to boost the breakdown voltages of AlGaN/GaN hetero junction field effect transistors (HFET... [more] ED2010-184 MW2010-144
pp.51-54
MW, ED 2011-01-14
14:55		 Tokyo Kikai-Shinko-Kaikan Bldg. A Wafer-Level-Chip-Size-Package Technique with Inverted Microstrip Lines for mm-wave Si CMOS ICs
Yasufumi Kawai, Shinji Ujita, Takeshi Fukuda, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2010-191 MW2010-151		 We present a novel wafer-level-chip-size-package (WLCSP) technique with inverted microstrip line (IMSL) for mm-wave Si-C... [more] ED2010-191 MW2010-151
pp.87-90
ED 2010-12-17
10:35		 Miyagi Tohoku University (Research Institute of Electrical Communication) [Invited Talk] GaN Devices on Low Cost Substrates for Long-distance Millimeter-wave Communication
Hiroyuki Sakai, Masayuki Kuroda, Noboru Negoro, Tomohiro Murata, Shuichi Nagai, Masaaki Nishijima, Yoshiharu Anda, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2010-167		 We present GaN Devices on low cost substrates for long-distance millimeter-wave communication. Sapphire substrates are u... [more] ED2010-167
pp.53-58
IE, LOIS, ITE-ME, IEE-CMN [detail] 2010-09-21
14:20		 Kochi   Relating "Log Behavior" to Lifelog Persistence
Takeshi Tanaka, Hiroyuki Kuriyama, Ken Kawamoto, Takahiko Shintani, Kei Suzuki (Hitachi) LOIS2010-20 IE2010-62		 Continuous activity sensing is hoped to revolutionalize lifestyle diseases prevention. However, “Log behavior”, such as ... [more] LOIS2010-20 IE2010-62
pp.13-18
IE, LOIS, ITE-ME, IEE-CMN [detail] 2010-09-21
14:45		 Kochi   A study on sensor based "life-pattern" evaluation
Ken Kawamoto, Hiroyuki Kuriyama, Takeshi Tanaka, Takahiko Shintani, Kei Suzuki (Hitachi) LOIS2010-21 IE2010-63		 Quantifying features of one’s lifestyle is an important task in all forms of human-related services, including medicine ... [more] LOIS2010-21 IE2010-63
pp.19-24
MW, ED 2009-01-14
15:25		 Tokyo Kikai-Shinko-Kaikan Bldg GaN-based Natural Super Junction Diodes
Hidetoshi Ishida, Daisuke Shibata, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.) ED2008-202 MW2008-167		 We propose a new breakdown mechanism of GaN-based electron devices called “Natural Super Junction”. The junction model i... [more] ED2008-202 MW2008-167
pp.23-27
MW, ED 2009-01-16
10:20		 Tokyo Kikai-Shinko-Kaikan Bldg AlGaN/GaN MIS-HFETs Using In-situ SiN as Gate Insulators
Masayuki Kuroda, Tomohiro Murata, Satoshi Nakazawa, Toshiyuki Takizawa, Masaaki Nishijima, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2008-220 MW2008-185		 AlGaN/GaN heterojunction transistors (HFETs) are promising for high frequency and high power applications owing to the h... [more] ED2008-220 MW2008-185
pp.125-128
MW 2008-08-28
14:20		 Osaka Osaka-Univ. (Toyonaka) K-band AlGaN/GaN-based MMICs on sapphire substrates
Tomohiro Murata, Masayuki Kuroda (Matsushita), Shuichi Nagai (PBL), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita), Ming Li (PBL) MW2008-85		 We present K-band AlGaN/GaN HFET MMIC amplifiers with integrated microstrip lines on sapphire substrates. The microstrip... [more] MW2008-85
pp.37-40
SDM, ED 2008-07-11
10:50		 Hokkaido Kaderu２・７ High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation
Daisuke Shibata, Hisayoshi Matsuo (Matsushita Electric Industrial), Shuichi Nagai, Ming Li (Panasonic Boston Lab), Naohiro Tsurumi, Hidetoshi Ishida, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric Industrial) ED2008-73 SDM2008-92		 We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) using thick poly-crystalline AlN (pol... [more] ED2008-73 SDM2008-92
pp.177-181
 Results 1 - 20 of 36  /  [Next]  
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan