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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2011-07-29
14:45
Niigata Multimedia system center, Nagaoka Univ. of Tech. Characterization of MOS interfaces and current collapse in AlGaN/GaN HEMTs
Tamotsu Hashizume, Chihoko Mizue, Yujin Hori, Masafumi Tajima, Kota Ohi (Hokkaido Univ.) ED2011-40
 [more] ED2011-40
pp.17-20
MW, ED 2011-01-14
09:30
Tokyo Kikai-Shinko-Kaikan Bldg. Current collapse characterization of AlGaN/GaN HEMTs using by dual-gate structure
Masafumi Tajima, Tamotsu Hashizume (Hokkaido Univ.) ED2010-182 MW2010-142
By using a dual-gate structure, we have investigated impact of gate-stress position on the current collapse behavior of ... [more] ED2010-182 MW2010-142
pp.41-44
ED, CPM, SDM 2009-05-15
13:50
Aichi Satellite Office, Toyohashi Univ. of Technology Operation stability assessment of AlGaN/GaN HEMT
Masafumi Tajima, Tamotsu Hashizume (Hokkaido Univ.) ED2009-34 CPM2009-24 SDM2009-24
 [more] ED2009-34 CPM2009-24 SDM2009-24
pp.87-90
ED 2008-06-13
13:50
Ishikawa Kanazawa University Deep levels in AlGaN and operation stability of AlGaN/GaN HEMT
Masafumi Tajima, Junji Kotani, Katsuya Sugawara, Tamotsu Hashizume (Hokkaido Univ.) ED2008-24
 [more] ED2008-24
pp.11-16
CPM, ED, LQE 2007-10-12
11:15
Fukui Fukui Univ. Surface control of AlGaN/GaN strcutures
Masafumi Tajima, Junji Kotani, Takahiro Tamura, Tamotsu Hashizume (Hokkaido Univ.) ED2007-170 CPM2007-96 LQE2007-71
We have investigated the change in DC characteristics of AlGaN/GaN HEMTs after the gate-and drain-bias stress at high te... [more] ED2007-170 CPM2007-96 LQE2007-71
pp.73-76
ED, CPM, LQE 2006-10-05
15:20
Kyoto   Interface control for GaN-based electron devices
Takeshi Kimura, Junji Kotani, Hiroki Kato, Masafumi Tajima, Eri Ogawa, Chihoko Mizue, Tamotsu Hashizume (Hokkaido University)
 [more] ED2006-157 CPM2006-94 LQE2006-61
pp.29-34
 Results 1 - 6 of 6  /   
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