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All Technical Committee Conferences (Searched in: All Years)
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| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| SDM, ICD |
2011-08-25
10:50 |
Toyama |
Toyama kenminkaikan |
Plasma Doping and Laser Spike Annealing Technique for Steep SDE Formation in nano-scale MOSFET
Emiko Sugizaki, Toshitaka Miyata, Yasunori Oshima, Akira Hokazono, Kanna Adachi, Kiyotaka Miyano, Hideji Tsujii, Shigeru Kawanaka, Satoshi Inaba, Takaharu Itani, Toshihiko Iinuma, Yoshiaki Toyoshima (Toshiba)  SDM2011-75 ICD2011-43 |
The importance of impurity profile design for Source/Drain Extension (SDE) is widely recognized for deeply scaled MOSFET... [more] |
SDM2011-75 ICD2011-43
pp.23-27 |
| SDM, ICD |
2011-08-26
09:00 |
Toyama |
Toyama kenminkaikan |
Evaluation of Variability in High-k/Metal-Gate MOSFET using Takeuchi Plot
Tomoko Mizutani, Anil Kumar (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2011-83 ICD2011-51 |
[more] |
SDM2011-83 ICD2011-51
pp.65-68 |
| SDM, ICD |
2011-08-26
09:25 |
Toyama |
Toyama kenminkaikan |
Statistical Analysis of DIBL and Current-Onset Voltage (COV) Variability in Scaled MOSFETs
Anil Kumar, Tomoko Mizutani (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2011-84 ICD2011-52 |
[more] |
SDM2011-84 ICD2011-52
pp.69-73 |
| ICD, SDM |
2010-08-27
16:00 |
Hokkaido |
Sapporo Center for Gender Equality |
Random Drain Current Variation Caused by "Current-Onset Voltage" Variability in Scaled MOSFETs
Tomoko Mizutani (Univ. of Tokyo), Takaaki Tsunomura (MIRAI-Selete), Anil Kumar (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2010-150 ICD2010-65 |
It is revealed that drain current variability is fluctuated by “current-onset voltage” as well as threshold voltage VTH ... [more] |
SDM2010-150 ICD2010-65
pp.143-148 |
| ICD, SDM |
2009-07-16
15:50 |
Tokyo |
Tokyo Institute of Technology |
The Study of Mobility-Tinv Trade-off in Deeply Scaled High-k/Metal Gate Devices and Scaling Design Guideline for 22nm-node Generation
Masakazu Goto, Shigeru Kawanaka, Seiji Inumiya, Naoki Kusunoki, Masumi Saitoh, Kosuke Tatsumura, Atsuhiro Kinoshita, Satoshi Inaba, Yoshiaki Toyoshima (Toshiba) SDM2009-107 ICD2009-23 |
The trade-off between Tinv scaling and carrier mobility () degradation in deeply scaled HK/MG nMOSFETs has been ... [more] |
SDM2009-107 ICD2009-23
pp.53-56 |
| SDM, VLD |
2006-09-26
13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Improvement of Drive Current in Bulk-FinFET using Full 3D Process/Device Simulations
Takahisa Kanemura, Takashi Izumida, Nobutoshi Aoki, Masaki Kondo, Sanae Ito, Toshiyuki Enda, Kimitoshi Okano, Hirohisa Kawasaki, Atsushi Yagishita, Akio Kaneko, Satoshi Inaba, Mitsutoshi Nakamura, Kazunari Ishimaru, Kyoichi Suguro, Kazuhiro Eguchi (Toshiba Corp.) |
We discussed the optimization of structure of bulk-FinFETs and ion implantations by using 3-D process and device simulat... [more] |
VLD2006-43 SDM2006-164
pp.25-29 |
| ICD, SDM |
2006-08-18
11:40 |
Hokkaido |
Hokkaido University |
Embedded Bulk FinFET SRAM Cell Technology with Planar FET Peripheral Circuit for hp32 nm node and beyond
Hirohisa Kawasaki (TAEC), Satoshi Inaba, Kimitoshi Okano, Akio Kaneko (Toshiba Semicon.), Atsushi Yagishita (TAEC), Takashi Izumida, Takahisa Kanemura, Takahiko Sasaki, Nobuaki Otsuka, Nobutoshi Aoki, Kyoichi Suguro, Kazuhiro Eguchi, Yoshitaka Tsunashima (Toshiba Semicon.), Kazunari Ishimaru (TAEC), Hidemi Ishiuchi (Toshiba Semicon.) |
[more] |
SDM2006-147 ICD2006-101
pp.127-132 |
| ICD, SDM |
2005-08-19
14:40 |
Hokkaido |
HAKODATE KOKUSAI HOTEL |
Robust Device Design in FinFET SRAM for hp22nm Technology Node
Kimitoshi Okano, Tatsuya Ishida, Takahiko Sasaki, Takashi Izumida, Masaki Kondo, Makoto Fujiwara, Nobutoshi Aoki, Satoshi Inaba, Nobuaki Otsuka, Kazunari Ishimaru, Hidemi Ishiuchi (Toshiba) |
Feasibility of FinFET SRAM operation at hp22nm technology node has been studied by device and circuit simulation from th... [more] |
SDM2005-154 ICD2005-93
pp.67-72 |
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