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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 7 of 7  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, CPM, LQE 2021-11-25
16:05
Online Online Substrate off-cut angle dependence on fabrication of high-temperature annealed a-plane AlN on r-plane sapphire
Kota Shibutani, Kenjiro Uesugi, Shiyu Xiao, Kanako Shojiki, Shigeyuki Kuboya, Toru Akiyama, Hideto Miyake (Mie Univ.) ED2021-25 CPM2021-59 LQE2021-37
 [more] ED2021-25 CPM2021-59 LQE2021-37
pp.51-54
ED, CPM, LQE 2021-11-25
16:30
Online Online Growth of 220-nm-band-emission AlGaN Quantum Wells Using Annealed Sputtered AlN Template
Shoya Ishihara, Shigeyuki Kuboya, Kanako Shojiki, Kenjiro Uesugi, Xiao Shiyu, Hideto Miyake (Mie Univ.) ED2021-26 CPM2021-60 LQE2021-38
 [more] ED2021-26 CPM2021-60 LQE2021-38
pp.55-58
ED, CPM, LQE 2021-11-26
15:20
Online Online Fabrication and electrical property characterization of AlGaN channel HEMT on AlN template
Ryuichi Mori, Kenjiro Uesugi, Shegeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.) ED2021-33 CPM2021-67 LQE2021-45
$Al_{0.85}Ga_{0.15}N$/$Al_{0.60}Ga_{0.40}N$ HEMT structures with channel thicknesses of 100–1000 nm were grown on low-di... [more] ED2021-33 CPM2021-67 LQE2021-45
pp.83-86
LQE, CPM, ED 2020-11-26
15:00
Online Online Growth of GaN on AlN template with atomic-level flatness for High Electron Mobility Transistor
Tatsuya Shirato, Kenjiro Uesugi, Shigeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.) ED2020-11 CPM2020-32 LQE2020-62
We investigated the effect of carrier gas on GaN surface morphology. Bunched step-and-terrace structures and pits were f... [more] ED2020-11 CPM2020-32 LQE2020-62
pp.41-44
LQE, CPM, ED 2020-11-27
15:20
Online Online MOVPE Growth on Low-dislocation-density AlN Templates with Nano-Striped Patterns and Crystalline-Quality Evaluations
Yukino Iba, Kanako Shojiki, Shigeyuki Kuboya, Kenjiro Uesugi, Shiyu Xiao, Hideto Miyake (Mie Univ.) ED2020-24 CPM2020-45 LQE2020-75
We conducted metalorganic vapor phase epitaxial (MOVPE) growth of AlN films on face-to-face annealed sputtered AlN templ... [more] ED2020-24 CPM2020-45 LQE2020-75
pp.91-94
LQE, CPM, ED 2020-11-27
16:00
Online Online Introduction of AlN/GaN Superlattice Layers for Growth of Strain-Relaxed AlGaN Films on AlN Templates
Takafumi Inamori, Shigeyuki Kuboya, Shoya Ishihara, Tatsuya Shirato, Kenjiro Uesugi, Kanako Shojiki, Hideto Miyake (Mie Univ.) ED2020-26 CPM2020-47 LQE2020-77
 [more] ED2020-26 CPM2020-47 LQE2020-77
pp.99-102
SDM, ED, CPM 2017-05-26
10:45
Aichi VBL, Nagoya University N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE
Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka (Tohoku Univ.) ED2017-26 CPM2017-12 SDM2017-20
An N-polar GaN high electron mobility transistor (HEMT) has an advantage over a Ga-polar HEMT from viewpoints of a poten... [more] ED2017-26 CPM2017-12 SDM2017-20
pp.59-64
 Results 1 - 7 of 7  /   
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